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    Pattern measuring apparatus, pattern measuring method, and computer-readable recording medium on which a pattern measuring program is recorded
    11.
    发明授权
    Pattern measuring apparatus, pattern measuring method, and computer-readable recording medium on which a pattern measuring program is recorded 有权
    图案测量装置，图案测量方法以及记录图案测量程序的计算机可读记录介质

    公开(公告)号：US09521372B2

    公开(公告)日：2016-12-13

    申请号：US13898620

    申请日：2013-05-21

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Yoshinori Momonoi ,  Koichi Hamada ,  Yuji Takagi ,  Michio Hatano ,  Hideyuki Kazumi

    IPC: H04N7/18 ,  G06T7/00

    CPC classification number: H04N7/18 ,  G06T7/0006 ,  G06T2207/10016 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: There is provided a technique to correctly select and measure a pattern to be measured even when contours of the pattern are close to each other in a sample including a plurality of patterns on a substantially same plane.A pattern measuring apparatus that scans a sample with charged particles, forms a detected image by detecting secondary charged particles or backscattered charged particles generated from the sample, and measures a pattern imaged on the detected image includes: an image acquiring section acquiring a plurality of detected images taken at a substantially same location on the sample under different imaging conditions; a contour extracting section extracting a plurality of pattern contours from the plurality of detected images; a contour reconstructing section reconstructing a contour to be measured by combining the plurality of pattern contours; and a contour measuring section making a measurement using the reconstructed contour to be measured.

    Abstract translation: 一种用带电粒子扫描样品的图形测量装置，通过检测从样品产生的二次带电粒子或反向散射带电粒子形成检测图像，并测量在检测图像上成像的图案，包括：图像获取部分，获取多个检测到的 在不同成像条件下在样品上基本相同位置拍摄的图像; 轮廓提取部，从所述多个检测图像中提取多个图案轮廓; 轮廓重建部，通过组合多个图案轮廓来重建要测量的轮廓; 以及轮廓测量部，其使用要测量的重构轮廓进行测量。

    Defect classification apparatus and defect classification method
    12.
    发明授权
    Defect classification apparatus and defect classification method 有权

    公开(公告)号：US10810733B2

    公开(公告)日：2020-10-20

    申请号：US16090991

    申请日：2016-05-24

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Naoaki Kondo ,  Takehiro Hirai ,  Minoru Harada ,  Yuji Takagi

    IPC: G06K9/00 ,  G06T7/00 ,  G01N23/225 ,  G06K9/62 ,  G06K9/42

    Abstract: Provided is a defect classification apparatus classifying images of defects of a sample included in images obtained by capturing the sample, the apparatus including an image storage unit for storing the images of the sample acquired by an external image acquisition unit, a defect class storage unit for storing types of defects included in the images of the sample, an image processing unit for extracting images of defects from the images from the sample, processing the extracted images of defects and generating a plurality of defect images, a classifier learning unit for learning a defect classifier using the images of defects of the sample extracted by the image processing unit and data of the plurality of generated defect images, and a defect classification unit for processing the images of the sample by using the classifier learned by the classifier learning unit, to classify the images of defects of the sample.

    Electron microscope device and inclined hole measurement method using same
    13.
    发明授权
    Electron microscope device and inclined hole measurement method using same 有权

    公开(公告)号：US10720307B2

    公开(公告)日：2020-07-21

    申请号：US16332212

    申请日：2017-09-14

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Yuji Takagi ,  Fumihiko Fukunaga ,  Yasunori Goto

    IPC: H01J37/28 ,  G01N21/47 ,  G01N21/95 ,  G01N23/2251 ,  H01J37/22 ,  H01J37/26

    Abstract: An electron microscope device includes: a first detection means disposed at a high elevation angle for detecting electrons having relatively low energy; a second detection means disposed at a low elevation angle for detecting electrons having relatively high energy; a means for identifying, from a first image obtained from a first detector, a hole region in a semiconductor pattern within a preset region; a means for calculating for individual holes, from a second image obtained from a second detector, indexes pertaining to an inclined orientation and an inclination angle, on the basis of the distance between the outer periphery of the hole region and the hole bottom; and a means for calculating, from the results measured for the individual holes, indexes pertaining to an inclined orientation of the hole and an inclination angle of the hole as representative values for the image being measured.

    Sample observation method and sample observation device
    14.
    发明授权
    Sample observation method and sample observation device 有权

    公开(公告)号：US10229812B2

    公开(公告)日：2019-03-12

    申请号：US15544788

    申请日：2015-12-21

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Minoru Harada ,  Yuji Takagi ,  Takehiro Hirai

    IPC: H01J37/22 ,  G01B15/04 ,  G06T5/50 ,  G06T7/00 ,  G01N23/22

    Abstract: An inspection method uses a charged particle microscope to observe a sample and view a defect site or a circuit pattern. A plurality of images is detected by a plurality of detectors and a mixed image is generated by automatically adjusting and mixing weighting factors required when the plurality of images are synthesized with each other. The sample is irradiated and scanned with a charged particle beam so that the plurality of detectors arranged at different positions from the sample detects a secondary electron or a reflected electron generated from the sample. The mixed image is generated by mixing the plurality of images of the sample with each other for each of the plurality of detectors, which are obtained by causing each of the plurality of detectors arranged at the different positions to detect the secondary electron or the reflected electron. The generated mixed image is displayed on a screen.

    Defect observation method and defect observation device
    15.
    发明授权
    Defect observation method and defect observation device 有权

    公开(公告)号：US09811897B2

    公开(公告)日：2017-11-07

    申请号：US14652198

    申请日：2013-12-06

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Minoru Harada ,  Yuji Takagi ,  Ryo Nakagaki ,  Takehiro Hirai ,  Hirohiko Kitsuki

    IPC: G06T7/00 ,  G01N21/95

    CPC classification number: G06T7/001 ,  G01N21/9501 ,  G06T2207/10004 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: The purpose of the present invention is to easily extract, from samples to be observed, defect candidates that can be labeled as a defect or “nuisance” (a part for which a manufacturing tolerance or the like is erroneously detected) and to allow parameters pertaining to observation processing to be easily adjusted. This defect observation method comprises: an imaging step to image, on the basis of defect information from an inspection device, an object to be inspected and obtain a defect image and a reference image corresponding to the defect image; a parameter determining step to determine a first parameter to be used in the defect extraction by using a first feature set distribution acquired from the reference image and the defect image captured in the imaging step and a second feature net distribution acquired from the reference image; and an observing step to observe using the first parameter determined in the parameter determining step. The present invention can be applied to a method of observing defects generated during the manufacturing of semiconductor wafers.

    DEFECT OBSERVATION METHOD AND DEFECT OBSERVATION DEVICE
    16.
    发明申请
    DEFECT OBSERVATION METHOD AND DEFECT OBSERVATION DEVICE 审中-公开

    公开(公告)号：US20170328842A1

    公开(公告)日：2017-11-16

    申请号：US15522143

    申请日：2015-12-01

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Yuko Otani ,  Yuji Takagi ,  Hideki Nakayama

    IPC: G01N21/956 ,  G01N23/225

    CPC classification number: G01N21/95607 ,  G01N21/8851 ,  G01N21/956 ,  G01N21/95623 ,  G01N23/2251 ,  G01N2021/8861 ,  G01N2021/8867 ,  G01N2021/95615 ,  H01L22/12 ,  H01L22/20

    Abstract: Provided are a defect observation method and a defect observation device which detect a defect from an image obtained by imaging the defect on a sample with an optical microscope by using positional information of the defect on the sample detected by a different inspection device to correct the positional information of the defect and observe in detail the defect on the sample with a scanning electron microscope using the corrected positional information. The defect observation method includes detecting the defect from the image to correct the positional information of the defect, switching a spatially-distributed optical element of a detection optical system of the optical microscope according to the defect to be detected, and changing an image acquisition condition for acquiring the image and an image processing condition for detecting the defect from the image according to a type of the switched spatially-distributed optical element.

    SEMICONDUCTOR DEVICE DEFECT INSPECTION METHOD AND SYSTEM THEREOF
    19.
    发明申请
    SEMICONDUCTOR DEVICE DEFECT INSPECTION METHOD AND SYSTEM THEREOF 有权
    半导体器件缺陷检测方法及其系统

    公开(公告)号：US20140198974A1

    公开(公告)日：2014-07-17

    申请号：US14119138

    申请日：2012-04-27

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Yuji Takagi

    IPC: G06T7/00

    CPC classification number: G06T7/0008 ,  H01J2237/2817 ,  H01L22/12

    Abstract: Provided are a semiconductor device defect inspection method and system thereof, with which predetermined hot spots are inspected using a SEM, and with which the frequency of defects occurring at the hot spot is estimated statistically and with reliability. An inspection point is designated in design data by the defect type. A plurality of pre-designated inspection points is selected by the defect type from the designated inspection points. The plurality of pre-designated inspection points by defect type thus selected are image captured by the inspection points. A defect ratio, which is a ratio of the plural inspection points which are image captured by the defect type to the plural defects detected, and a reliability interval of the defect ratio which is computed by the defect type is compared with a preset reference value. A defect type having a defect occurrence ratio which exceeds the reference value is derived.

    Abstract translation: 提供了一种半导体器件缺陷检查方法及其系统，利用SEM对该预定热点进行检查，利用该半导体器件缺陷检查方法和系统可靠地估计在热点处发生的缺陷的频率。 缺陷类型在设计数据中指定检查点。 通过来自指定检查点的缺陷类型来选择多个预先指定的检查点。 由这样选择的缺陷类型的多个预先指定的检查点是由检查点捕获的图像。 将由缺陷类型捕获的多个检查点与检测到的多个缺陷的多个检查点的比率和通过缺陷类型计算的缺陷率的可靠性间隔的比率与预设的参考值进行比较。 导出具有超过参考值的缺陷发生率的缺陷类型。

    PATTERN MEASURING APPARATUS, PATTERN MEASURING METHOD, AND COMPUTER-READABLE RECORDING MEDIUM ON WHICH A PATTERN MEASURING PROGRAM IS RECORDED
    20.
    发明申请
    PATTERN MEASURING APPARATUS, PATTERN MEASURING METHOD, AND COMPUTER-READABLE RECORDING MEDIUM ON WHICH A PATTERN MEASURING PROGRAM IS RECORDED 有权
    图案测量装置，图形测量方法和记录图形测量程序的计算机可读记录介质

    公开(公告)号：US20130321610A1

    公开(公告)日：2013-12-05

    申请号：US13898620

    申请日：2013-05-21

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Yoshinori Momonoi ,  Koichi Hamada ,  Yuji Takagi ,  Michio Hatano ,  Hideyuki Kazumi

    IPC: H04N7/18

    CPC classification number: H04N7/18 ,  G06T7/0006 ,  G06T2207/10016 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: There is provided a technique to correctly select and measure a pattern to be measured even when contours of the pattern are close to each other in a sample including a plurality of patterns on a substantially same plane.A pattern measuring apparatus that scans a sample with charged particles, forms a detected image by detecting secondary charged particles or backscattered charged particles generated from the sample, and measures a pattern imaged on the detected image includes: an image acquiring section acquiring a plurality of detected images taken at a substantially same location on the sample under different imaging conditions; a contour extracting section extracting a plurality of pattern contours from the plurality of detected images; a contour reconstructing section reconstructing a contour to be measured by combining the plurality of pattern contours; and a contour measuring section making a measurement using the reconstructed contour to be measured.

    Abstract translation: 提供了一种技术，即使在图案的轮廓在基本上相同的平面上的包括多个图案的样本中彼此接近的情况下，也能正确地选择和测量待测量的图案。 一种用带电粒子扫描样品的图形测量装置，通过检测从样品产生的二次带电粒子或反向散射带电粒子形成检测图像，并测量在检测图像上成像的图案，包括：图像获取部分，获取多个检测到的 在不同成像条件下在样品上基本相同位置拍摄的图像; 轮廓提取部，从所述多个检测图像中提取多个图案轮廓; 轮廓重建部，通过组合多个图案轮廓来重建要测量的轮廓; 以及轮廓测量部，其使用要测量的重构轮廓进行测量。

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