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11.
公开(公告)号:US09804107B2
公开(公告)日:2017-10-31
申请号:US15103894
申请日:2014-11-17
Applicant: Hitachi High-Technologies Corporation
Inventor: Akiyuki Sugiyama , Miki Isawa , Satoru Yamaguchi , Motonobu Hommi
IPC: G01N23/00 , G01N23/22 , G01B15/00 , G03F7/00 , G01N23/225
CPC classification number: G01N23/2206 , G01B15/00 , G01B2210/56 , G01N23/2251 , G01N2223/071 , G01N2223/302 , G01N2223/306 , G01N2223/6116 , G03F7/0002
Abstract: The purpose of the present invention is to provide a pattern measurement device for quantitatively evaluating a pattern formed using a directed self-assembly (DSA) method with high accuracy. The present invention is a pattern measurement device for measuring distances between patterns formed in a sample, wherein the centroids of a plurality of patterns included in an image are determined; the inter-centroid distances, and the like, of the plurality of centroids are determined; and on the basis of the inter-centroid distances, and the like, of the plurality of centroids, a pattern meeting a specific condition is distinguished from patterns different from the pattern meeting the specific condition or information is calculated about the number of the patterns meeting the specific condition, the size of an area including the patterns meeting the specific condition, and the number of imaginary lines between the patterns meeting the specific condition.
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公开(公告)号:US09627171B2
公开(公告)日:2017-04-18
申请号:US14410999
申请日:2013-06-10
Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
Inventor: Hiroshi Makino , Hideyuki Kazumi , Minoru Yamazaki , Yuzuru Mizuhara , Miki Isawa
IPC: G21K7/00 , H01J37/147 , H01J37/244 , H01J37/28
CPC classification number: H01J37/147 , H01J37/244 , H01J37/28 , H01J2237/24485 , H01J2237/2449 , H01J2237/2806 , H01J2237/281
Abstract: An objective of the present invention is to provide a charged particle beam device with which information based on a charged particle which is discharged from a bottom part of high-aspect structure is revealed more than with previous technology. To achieve the objective, proposed is a charged particle beam device comprising: a first orthogonal electromagnetic field generator which deflects charged particles which are discharged from a material; a second orthogonal electromagnetic field generator which further deflects the charged particles which are deflected by the first orthogonal electromagnetic field generator; an aperture forming member having a charged particle beam pass-through aperture; and a third orthogonal electromagnetic field generator which deflects the charged particles which have passed through the aperture forming member.
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公开(公告)号:US20150008322A1
公开(公告)日:2015-01-08
申请号:US14379715
申请日:2013-02-18
Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
Inventor: Toshiyuki Yokosuka , Chahn Lee , Hideyuki Kazumi , Hiroshi Makino , Yuzuru Mizuhara , Miki Isawa , Michio Hatano , Yoshinori Momonoi
CPC classification number: H01J37/28 , G01B15/00 , G01B15/04 , H01J2237/0048 , H01J2237/0492 , H01J2237/24495 , H01J2237/281 , H01J2237/2815 , H01J2237/2817
Abstract: An object of the invention is to provide a scanning electron microscope which forms an electric field to lift up, highly efficiently, electrons discharged from a hole bottom or the like even if a sample surface is an electrically conductive material. To achieve the above object, according to the invention, a scanning electron microscope including a deflector which deflects a scanning position of an electron beam, and a sample stage for loading a sample thereon, is proposed. The scanning electron microscope includes a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer.
Abstract translation: 本发明的目的是提供一种形成电场的扫描电子显微镜,即使样品表面是导电材料,也能高效地提高从孔底等排出的电子。 为了实现上述目的,根据本发明,提出了一种扫描电子显微镜,其包括使电子束的扫描位置偏转的偏转器和用于在其上装载样品的样品台。 扫描电子显微镜包括控制装置,其以这样的方式控制偏转器或样品台,即在测量目标图案上扫描光束之前,位于测量对象图案的下层中的下层图案在另一个上进行光束照射 图案位于下层。
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