公开(公告)号：US20170092347A1

公开(公告)日：2017-03-30

申请号：US15369246

申请日：2016-12-05

申请人： Everspin Technologies, Inc.

发明人： Dietmar Gogl ,  Syed M. Alam ,  Thomas Andre

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C5/147 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1697 ,  G11C13/0069 ,  G11C2213/79

摘要： A cell bias control circuit maximizes the performance of devices in the read/write path of memory cells (magnetic tunnel junction device+transistor) without exceeding leakage current or reliability limits by automatically adjusting multiple control inputs of the read/write path at the memory array according to predefined profiles over supply voltage, temperature, and process corner variations by applying any specific reference parameter profiles to the memory array.

公开(公告)号：US09583169B2

公开(公告)日：2017-02-28

申请号：US15149401

申请日：2016-05-09

申请人： Everspin Technologies, Inc.

发明人： Dietmar Gogl ,  Syed M. Alam ,  Thomas Andre ,  Halbert S. Lin

IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C8/08

CPC分类号： G11C11/1673 ,  G11C8/08 ,  G11C11/1657 ,  G11C11/1693 ,  G11C11/1697

摘要： A boosted supply voltage generator is selectively activated and deactivated to allow operations that are sensitive to variations on the boosted voltage to be performed with a stable boosted voltage. Techniques for deactivating and reactivating the voltage generator are also disclosed that enable more rapid recovery from deactivation such that subsequent operations can be commenced sooner. Such techniques include storing state information corresponding to the voltage generator when deactivated, where the stored state information is used when reactivating the voltage generator. Stored state information can include a state of a clock signal provided to the voltage generator.

摘要翻译： 升压的电源电压发生器被选择性地激活和去激活，以允许以稳定的升压电压来执行对升压电压的变化敏感的操作。 还公开了用于停用和重新激活电压发生器的技术，其使得能够从停用中更快速地恢复，使得可以更快地开始后续操作。 这样的技术包括当停用时存储对应于电压发生器的状态信息，其中在重新激活电压发生器时使用存储的状态信息。 存储状态信息可以包括提供给电压发生器的时钟信号的状态。

公开(公告)号：US09552863B1

公开(公告)日：2017-01-24

申请号：US14872438

申请日：2015-10-01

申请人： Everspin Technologies, Inc.

发明人： Thomas Andre ,  Syed Alam ,  Chitra K. Subramanian ,  Dietmar Gogl

IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C13/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C11/1675 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/1677 ,  G11C13/0002 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2013/0088

摘要： A memory device is configured to identify a set of bit cells to be changed from a first state to a second state. In some examples, the memory device may apply a first voltage to the set of bit cells to change a least a first portion of the set of bit cells to the second state. In some cases, the memory device may also identify a second portion of the bit cells that remained in the first state following the application of the first voltage. In these cases, the memory device may apply a second voltage having a greater magnitude, duration, or both to the second portion of the set of bit cells in order to set the second portion of bit cells to the second state.

摘要翻译： 存储器设备被配置为识别要从第一状态改变到第二状态的位单元的集合。 在一些示例中，存储器件可以向该位单元集合施加第一电压以将位组中的至少第一部分改变为第二状态。 在一些情况下，存储器件还可以识别在应用第一电压之后保持在第一状态的位单元的第二部分。 在这些情况下，存储器件可以将具有更大幅度，持续时间或两者的第二电压施加到位单元集合的第二部分，以便将位单元的第二部分设置为第二状态。

公开(公告)号：US20160254040A1

公开(公告)日：2016-09-01

申请号：US15149401

申请日：2016-05-09

申请人： Everspin Technologies, Inc.

发明人： Dietmar Gogl ,  Syed M. Alam ,  Thomas Andre ,  Halbert S. Lin

IPC分类号： G11C11/16

CPC分类号： G11C11/1673 ,  G11C8/08 ,  G11C11/1657 ,  G11C11/1693 ,  G11C11/1697

摘要： A boosted supply voltage generator is selectively activated and deactivated to allow operations that are sensitive to variations on the boosted voltage to be performed with a stable boosted voltage. Techniques for deactivating and reactivating the voltage generator are also disclosed that enable more rapid recovery from deactivation such that subsequent operations can be commenced sooner. Such techniques include storing state information corresponding to the voltage generator when deactivated, where the stored state information is used when reactivating the voltage generator. Stored state information can include a state of a clock signal provided to the voltage generator.

摘要翻译： 升压的电源电压发生器被选择性地激活和去激活，以允许以稳定的升压电压来执行对升压电压的变化敏感的操作。 还公开了用于停用和重新激活电压发生器的技术，其使得能够从停用中更快速地恢复，使得可以更快地开始后续操作。 这样的技术包括当停用时存储对应于电压发生器的状态信息，其中在重新激活电压发生器时使用存储的状态信息。 存储状态信息可以包括提供给电压发生器的时钟信号的状态。

公开(公告)号：US09311980B1

公开(公告)日：2016-04-12

申请号：US14052223

申请日：2013-10-11

申请人： Everspin Technologies, Inc.

发明人： Dietmar Gogl ,  Syed M. Alam ,  Thomas Andre ,  Halbert S. Lin

IPC分类号： G11C11/00 ,  G11C11/16

CPC分类号： G11C11/1673 ,  G11C8/08 ,  G11C11/1657 ,  G11C11/1693 ,  G11C11/1697

摘要： A word line supply voltage generator is selectively activated and deactivated to allow internal memory operations that are sensitive to variations on word line voltages to be performed with a stable word line voltage. Techniques for deactivating and reactivating the voltage generator are also disclosed that enable more rapid recovery from deactivation such that subsequent operations can be commenced sooner.

摘要翻译： 字线电源电压发生器被选择性地激活和去激活以允许以稳定的字线电压执行对字线电压变化敏感的内部存储器操作。 还公开了用于停用和重新激活电压发生器的技术，其使得能够从停用中更快速地恢复，使得可以更快地开始后续操作。

公开(公告)号：US20160042780A1

公开(公告)日：2016-02-11

申请号：US14887426

申请日：2015-10-20

申请人： Everspin Technologies, Inc.

发明人： Dietmar Gogl ,  Syed M. Alam ,  Thomas Andre

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C5/147 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1697 ,  G11C13/0069 ,  G11C2213/79

摘要： A cell bias control circuit maximizes the performance of devices in the read/write path of memory cells (magnetic tunnel junction device+transistor) without exceeding leakage current or reliability limits by automatically adjusting multiple control inputs of the read/write path at the memory array according to predefined profiles over supply voltage, temperature, and process corner variations by applying any specific reference parameter profiles to the memory array.

公开(公告)号：US09847116B2

公开(公告)日：2017-12-19

申请号：US15369246

申请日：2016-12-05

申请人： Everspin Technologies, Inc.

发明人： Dietmar Gogl ,  Syed M. Alam ,  Thomas Andre

IPC分类号： G11C11/16 ,  G11C13/00 ,  G11C5/14

CPC分类号： G11C11/1675 ,  G11C5/147 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1697 ,  G11C13/0069 ,  G11C2213/79

摘要： A cell bias control circuit maximizes the performance of devices in the read/write path of memory cells (magnetic tunnel junction device+transistor) without exceeding leakage current or reliability limits by automatically adjusting multiple control inputs of the read/write path at the memory array according to predefined profiles over supply voltage, temperature, and process corner variations by applying any specific reference parameter profiles to the memory array.

公开(公告)号：US09361964B1

公开(公告)日：2016-06-07

申请号：US15051794

申请日：2016-02-24

申请人： Everspin Technologies, Inc.

发明人： Dietmar Gogl ,  Syed M. Alam ,  Thomas Andre ,  Halbert S. Lin

IPC分类号： G11C11/00 ,  G11C11/16

CPC分类号： G11C11/1673 ,  G11C8/08 ,  G11C11/1657 ,  G11C11/1693 ,  G11C11/1697

摘要： A boosted supply voltage generator is selectively activated and deactivated to allow operations that are sensitive to variations on the boosted voltage to be performed with a stable boosted voltage. Techniques for deactivating and reactivating the voltage generator are also disclosed that enable more rapid recovery from deactivation such that subsequent operations can be commenced sooner. Such techniques include storing state information corresponding to the voltage generator when deactivated, where the stored state information is used when reactivating the voltage generator. Stored state information can include a state of a clock signal provided to the voltage generator.

摘要翻译： 升压的电源电压发生器被选择性地激活和去激活，以允许以稳定的升压电压来执行对升压电压的变化敏感的操作。 还公开了用于停用和重新激活电压发生器的技术，其使得能够从停用中更快速地恢复，使得可以更快地开始后续操作。 这样的技术包括当停用时存储对应于电压发生器的状态信息，其中在重新激活电压发生器时使用存储的状态信息。 存储状态信息可以包括提供给电压发生器的时钟信号的状态。

公开(公告)号：US20150200001A1

公开(公告)日：2015-07-16

申请号：US14667888

申请日：2015-03-25

申请人： Everspin Technologies, Inc.

发明人： Thomas Andre ,  Syed M. Alam ,  Dietmar Gogl

IPC分类号： G11C7/02 ,  G11C7/06 ,  G11C5/14

CPC分类号： G11C7/02 ,  G11C5/14 ,  G11C5/145 ,  G11C5/146 ,  G11C5/147 ,  G11C7/06 ,  G11C7/1006 ,  G11C7/18 ,  G11C8/12 ,  G11C16/12 ,  G11C16/30

摘要： In some examples, a memory device includes multiple memory banks equipped with an isolation switch and dedicated power supply pins. The isolation switch of each memory bank is configured to isolate the memory bank from global signals. The dedicated power supply pins are configured to connect each of the memory banks to a dedicated local power supply pads on the package substrate to provide local dedicated power supplies to each of the memory banks and to reduce voltage transfer between memory banks over conductors on the device, the device substrate, or the package substrate of the memory device.

摘要翻译： 在一些示例中，存储器件包括配备有隔离开关和专用电源引脚的多个存储体。 每个存储体的隔离开关被配置为将存储体与全局信号隔离。 专用电源引脚被配置为将每个存储器组连接到封装衬底上的专用本地电源焊盘，以向每个存储体提供本地专用电源，并且通过设备上的导体来减少存储体之间的电压传输 ，器件衬底或存储器件的封装衬底。

公开(公告)号：US09019794B2

公开(公告)日：2015-04-28

申请号：US14050625

申请日：2013-10-10

申请人： Everspin Technologies, Inc.

发明人： Thomas Andre ,  Syed M. Alam ,  Dietmar Gogl

IPC分类号： G11C8/12 ,  G11C7/02 ,  G11C5/14 ,  G11C16/12 ,  G11C16/30

CPC分类号： G11C7/02 ,  G11C5/14 ,  G11C5/145 ,  G11C5/146 ,  G11C5/147 ,  G11C7/06 ,  G11C7/1006 ,  G11C7/18 ,  G11C8/12 ,  G11C16/12 ,  G11C16/30

摘要： In some examples, a memory device includes multiple memory banks equipped with an isolation switch and dedicated power supply pins. The isolation switch of each memory bank is configured to isolate the memory bank from global signals. The dedicated power supply pins are configured to connect each of the memory banks to a dedicated local power supply pads on the package substrate to provide local dedicated power supplies to each of the memory banks and to reduce voltage transfer between memory banks over conductors on the device, the device substrate, or the package substrate of the memory device.

摘要翻译： 在一些示例中，存储器件包括配备有隔离开关和专用电源引脚的多个存储体。 每个存储体的隔离开关被配置为将存储体与全局信号隔离。 专用电源引脚被配置为将每个存储器组连接到封装衬底上的专用本地电源焊盘，以向每个存储体提供本地专用电源，并且通过器件上的导体来减少存储体之间的电压传输 ，器件衬底或存储器件的封装衬底。