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    Organic light emitting device
    13.
    发明授权
    Organic light emitting device 有权
    有机发光装置

    公开(公告)号：US09040963B2

    公开(公告)日：2015-05-26

    申请号：US13692265

    申请日：2012-12-03

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Jeong Ik Lee ,  Chul Woong Joo ,  Jun-Han Han ,  Joo Hyun Hwang ,  Nam Sung Cho ,  Jin Woo Huh ,  Jaehyun Moon ,  Seung Koo Park ,  Jin Wook Shin ,  Doo-Hee Cho ,  Hye Yong Chu

    IPC: H01L29/08 ,  H01L51/52 ,  H01L33/46 ,  H01L51/50

    CPC classification number: H01L51/5203 ,  H01L33/46 ,  H01L51/5036 ,  H01L51/5044

    Abstract: Provided is an organic light emitting device. The organic light emitting device comprising a first light emitting part on a substrate, emitting a first light of a first wavelength, wherein the first light emitting part includes a transparent first electrode, a first organic light emitting layer, and a transparent second electrode sequentially stacked on the substrate, a second light emitting part on the first light emitting part, emitting a second light of a second wavelength, wherein the second light emitting part includes a transparent third electrode, a second organic light emitting layer, and a reflective fourth electrode sequentially stacked on the first light emitting part, and a fluorescent material disposed at least one between the substrate and the first light emitting part, and between the first light emitting part and second light emitting part.

    Abstract translation: 提供了一种有机发光器件。 有机发光器件包括在衬底上的第一发光部分，发射第一波长的第一光，其中第一发光部分包括透明第一电极，第一有机发光层和顺序堆叠的透明第二电极 在所述基板上，在所述第一发光部分上的第二发光部分发射第二波长的第二光，其中所述第二发光部分依次包括透明第三电极，第二有机发光层和反射第四电极 堆叠在第一发光部分上的荧光材料和设置在基板和第一发光部分之间以及第一发光部分和第二发光部分之间的至少一个的荧光材料。

    Method of fabricating organic light emitting device
    14.
    发明授权
    Method of fabricating organic light emitting device 有权
    制造有机发光装置的方法

    公开(公告)号：US08828760B2

    公开(公告)日：2014-09-09

    申请号：US13746757

    申请日：2013-01-22

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Bong Joon Lee ,  Doo-Hee Cho ,  Jaehyun Moon ,  Jeong Ik Lee ,  Hye Yong Chu ,  Seung Koo Park ,  Jin Wook Shin ,  Jin Woo Huh ,  Nam Sung Cho ,  Joon Tae Ahn ,  Jun-Han Han ,  Chul Woong Joo ,  Joo Hyun Hwang

    IPC: H01L21/00

    CPC classification number: H01L51/5268

    Abstract: Provided is a method of fabricating an organic light emitting device that may form a light scattering layer having an irregular random structure at a low temperature. The method includes providing a substrate coated with a precursor layer; sequentially forming a metal layer and an organic layer on the precursor layer; performing a heat treatment of the organic layer to form an organic mask from the organic layer; patterning the metal layer by using the organic mask to form a metal mask; patterning the precursor layer by using the metal mask to form a light scattering layer having an irregular random structure; removing the metal mask and the organic mask; and sequentially stacking a planarization layer, a first electrode, an organic light emitting layer, a second electrode, and a passivation layer on the light scattering layer.

    Abstract translation: 提供一种制造可在低温下形成具有不规则随机结构的光散射层的有机发光器件的方法。 该方法包括提供涂覆有前体层的基材; 在前体层上依次形成金属层和有机层; 对有机层进行热处理，从有机层形成有机掩模; 通过使用有机掩模来图案化金属层以形成金属掩模; 通过使用金属掩模来图案化前体层以形成具有不规则随机结构的光散射层; 去除金属掩模和有机掩模; 并且在光散射层上顺序层叠平坦化层，第一电极，有机发光层，第二电极和钝化层。

    POLYMERS, OPTICAL FILMS, ORGANIC ELECTROLUMINESCENT DEVICES, AND METHODS OF MANUFACTURING THE OPTICAL FILM
    15.
    发明申请
    POLYMERS, OPTICAL FILMS, ORGANIC ELECTROLUMINESCENT DEVICES, AND METHODS OF MANUFACTURING THE OPTICAL FILM 审中-公开
    聚合物，光学膜，有机电致发光器件，以及制造光学膜的方法

    公开(公告)号：US20130181198A1

    公开(公告)日：2013-07-18

    申请号：US13736127

    申请日：2013-01-08

    Applicant: Electronics and telecommunications Research Institute

    Inventor： Seung Koo PARK ,  Jeong Ik Lee ,  Jaehyun Moon

    IPC: H01L51/00 ,  H01L51/52

    CPC classification number: H01L51/0035 ,  H01L51/5275

    Abstract: Disclosed are polymers, optical films, organic electroluminescent devices, and methods of manufacturing the optical film. The polymer and the optical film according to the inventive concept may include a high refractive material chemically combined with a polymer matrix and a low refractive material chemically combined with the polymer matrix. The low refractive material has a lower refractive index than the high refractive material. Thus, the polymer and the optical film may function as a light scattering layer including the low and high refractive materials chemically combined with the polymer matrix, or a light scattering layer including a high refractive film and low refractive particles dispersed within the high refractive film.

    Abstract translation: 公开了聚合物，光学膜，有机电致发光器件和制造光学膜的方法。 根据本发明构思的聚合物和光学膜可以包括与聚合物基质化学结合的高折射材料和与聚合物基质化学结合的低折射材料。 低折射材料具有比高折射材料低的折射率。 因此，聚合物和光学膜可以用作包括与聚合物基质化学结合的低折射材料和高折射材料的光散射层，或者包括分散在高折射膜内的高折射膜和低折射率颗粒的光散射层。

    SRAM device including oxide semiconductor
    16.
    发明授权
    SRAM device including oxide semiconductor 有权

    公开(公告)号：US11895817B2

    公开(公告)日：2024-02-06

    申请号：US17529817

    申请日：2021-11-18

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Sung Haeng Cho ,  Byung-Do Yang ,  Sooji Nam ,  Jaehyun Moon ,  Jae-Eun Pi ,  Jae-Min Kim

    IPC: H10B10/00 ,  G11C11/417 ,  G11C11/412

    CPC classification number: H10B10/12 ,  G11C11/412 ,  G11C11/417

    Abstract: Provided is a static random-access memory (SRAM) device. The SRAM device includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes a first NMOS area and a second NMOS area vertically separated from the PMOS area with the first NMOS area therebetween, a first transistor including a first gate electrode disposed on the PMOS area, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, a second transistor including a second gate electrode disposed in the first NMOS area and a second channel vertically overlapping the second gate electrode, and a third transistor including a third gate electrode disposed in the second NMOS area and a third channel vertically overlapping the third gate electrode, wherein the first channel includes silicon, wherein the second channel and the third channel include an oxide semiconductor.

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