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公开(公告)号：US20170025550A1
公开(公告)日：2017-01-26
申请号：US15215414
申请日：2016-07-20
Inventor： Dong Yun JUNG , Hyun Soo LEE , Sang Choon KO , Minki KIM , Jeho NA , EUN SOO NAM , Young Rak PARK , Junbo PARK , Hyung Seok LEE , Hyun-Gyu JANG , Chi Hoon JUN
IPC: H01L29/861 , H01L29/205
CPC classification number: H01L29/205 , H01L29/2003 , H01L29/66212 , H01L29/872
Abstract: Provided is a bridge diode according to an embodiment of the inventive concept. The bridge diode includes a first structure including a first lower nitride film and a first upper nitride film, which are laminated on the substrate, a second structure including a second lower nitride film and a second upper nitride film, which are laminated on the substrate, a first electrode structural body disposed on the first structure, and a second electrode structural body disposed on the second structure. The first electrode structural body includes a first electrode, a second electrode, and a third electrode, which are arranged in a clockwise direction, the second electrode structural body includes a fourth electrode, a fifth electrode, and a sixth electrode, which are arranged in a clockwise direction, the first electrode and the sixth electrode, which are connected to each other, are connected to an external circuit, the third electrode and the fourth electrode, which are connected to each other, are connected to an external circuit, and each of the second electrode and the fifth electrode is connected to the external circuit.
Abstract translation: 提供根据本发明构思的实施例的桥式二极管。 桥式二极管包括层叠在基板上的第一下部氮化物膜和第一上部氮化物膜的第一结构，包括层叠在基板上的第二下部氮化物膜和第二上部氮化物膜的第二结构， 设置在第一结构上的第一电极结构体和设置在第二结构上的第二电极结构体。 第一电极结构体包括沿顺时针方向布置的第一电极，第二电极和第三电极，第二电极结构体包括第四电极，第五电极和第六电极，其布置在 连接到彼此连接的顺时针方向，第一电极和第六电极连接到彼此连接的外部电路，第三电极和第四电极连接到外部电路，并且每个 的第二电极和第五电极连接到外部电路。
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公开(公告)号：US20150194363A1
公开(公告)日：2015-07-09
申请号：US14324724
申请日：2014-07-07
Inventor： Chi Hoon JUN , Sang Choon KO , Seok-Hwan MOON , Woojin CHANG , Sung-Bum BAE , Young Rak PARK , Je Ho NA , Jae Kyoung MUN , Eun Soo NAM
IPC: H01L23/367 , H01L21/3205 , H01L23/467 , H01L21/3065 , H01L21/308 , H01L23/473
CPC classification number: H01L21/3065 , H01L21/3081 , H01L21/32051 , H01L23/367 , H01L23/467 , H01L23/473 , H01L2924/0002 , H01L2924/00
Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.
Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括：设置在衬底上的有源区; 入口通道形成为隐藏在所述基板的一侧中的单个腔; 出口通道形成为埋在基板的另一侧中的单个腔; 微通道阵列，其包括多个微通道，其中所述多个微通道形成为埋在所述衬底中的多个空腔，并且所述微通道阵列的一端连接到所述入口通道的一侧，而另一端 的微通道阵列连接到出口通道的一侧; 以及将微通道彼此分离的微型散热器阵列。
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公开(公告)号：US20140159547A1
公开(公告)日：2014-06-12
申请号：US13864341
申请日：2013-04-17
Inventor： Chi Hoon JUN , Sang Choon Ko , Seok-Hwan Moon , Kwang-Seong Choi
IPC: H02N2/18
CPC classification number: H01L41/1136 , H02N2/186
Abstract: The present inventive concept discloses an impact-type piezoelectric micro power generator. The impact-type piezoelectric micro power generator may comprise a base having a cavity and at least one stop area adjacent to the cavity; a frame fastened to the base; a vibrating body comprising a plurality of first vibrating beams extended from the frame toward a top of the cavity, an impact beam connected to between first tips of the plurality of first vibrating beams and extended onto the stop area, and a second vibrating beam extended from the impact beam to between the plurality of first vibrating beams, the second vibrating beam having a second tip; and a piezoelectric device disposed on one of a top and a bottom of the second vibrating beam and the impact beam, the piezoelectric device generating electric power according to impacts of the vibrating body to the stop area and bending of the impact beam and the second vibrating beam.
Abstract translation: 本发明构思公开了一种冲击式压电微型发电机。 冲击型压电微型发电机可以包括具有空腔的基座和与空腔相邻的至少一个止动区域; 固定在基座上的框架; 振动体，包括从所述框架朝向所述空腔的顶部延伸的多个第一振动梁，连接到所述多个第一振动梁的第一末端之间并延伸到所述停止区域上的冲击梁，以及从所述第二振动梁延伸的第二振动梁 所述冲击梁到达所述多个第一振动梁之间，所述第二振动梁具有第二尖端; 以及设置在所述第二振动梁和所述冲击梁的顶部和底部中的一个上的压电装置，所述压电装置根据所述振动体对所述停止区域的冲击产生电力，并且所述冲击梁和所述第二振动 光束。
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公开(公告)号：US20140054262A1
公开(公告)日：2014-02-27
申请号：US14066085
申请日：2013-10-29
Inventor： Chi Hoon JUN , Sang Choon KO , Jong Tae MOON
IPC: H01L41/29 , H01L41/317 , H01L41/318 , H01L41/316
CPC classification number: H01L41/29 , H01L41/1136 , H01L41/31 , H01L41/316 , H01L41/317 , H01L41/318 , H02N2/188 , Y10T29/42
Abstract: Disclosed is a piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.
Abstract translation: 公开了一种压电微能量收集器及其制造方法，该方法包括：在基板上形成绝缘膜; 图案化绝缘膜并形成电极焊盘图案，中心电极图案和侧面电极图案; 在所述基板的内部形成开放空腔，以悬浮所述中心电极图案和所述侧面电极图案; 在电极焊盘图形，中心电极图案和侧面电极图案上设置导电膜，形成电极焊盘，中心电极和侧面电极; 以及形成压电膜以覆盖中心电极和侧电极之间的空间以及中心电极和侧电极的上表面。
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