公开(公告)号：US10920087B2

公开(公告)日：2021-02-16

申请号：US16098728

申请日：2017-03-27

Applicant: ENTEGRIS, INC.

Inventor： Steven Bishop ,  Sharad N. Yedave ,  Oleg Bly ,  Joseph Sweeney ,  Ying Tang

IPC: C09D1/00 ,  H01J37/08 ,  C01B35/06 ,  H01J37/317 ,  H01J37/32

Abstract: A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.

公开(公告)号：US10892137B2

公开(公告)日：2021-01-12

申请号：US16564965

申请日：2019-09-09

Applicant: ENTEGRIS, INC.

Inventor： Joseph D. Sweeney ,  Joseph R. Despres ,  Ying Tang ,  Sharad N. Yedave ,  Edward E. Jones ,  Oleg Byl

IPC: H01J37/08 ,  H01J37/317

Abstract: An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.

公开(公告)号：US20180211839A1

公开(公告)日：2018-07-26

申请号：US15928645

申请日：2018-03-22

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Edward A. Sturm ,  Ying Tang ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Barry Lewis Chambers

IPC: H01L21/265 ,  H01L33/00 ,  H01L31/18 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01L31/18 ,  H01L33/005

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

公开(公告)号：US09960042B2

公开(公告)日：2018-05-01

申请号：US14378963

申请日：2013-02-13

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Edward A. Sturm ,  Ying Tang ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Barry Lewis Chambers

IPC: H01L21/425 ,  H01L21/265 ,  H01J37/08 ,  H01J37/317 ,  H01L31/18 ,  H01L33/00

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01L31/18 ,  H01L33/005

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

公开(公告)号：US09685304B2

公开(公告)日：2017-06-20

申请号：US14861844

申请日：2015-09-22

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: H01J37/317 ,  C01B35/00 ,  C01B35/06 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

公开(公告)号：US20160211137A1

公开(公告)日：2016-07-21

申请号：US14912380

申请日：2014-08-14

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Joseph D. Sweeney ,  Tianniu Chen ,  James J. Mayer ,  Richard S. Ray ,  Oleg Byl ,  Sharad N. Yedave ,  Robert Kaim

IPC: H01L21/265 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/26506 ,  H01L21/26546

Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

Abstract translation: 描述了用于在衬底中注入硅和/或硅离子的组合物，系统和方法，包括从相应的硅前体组合物产生硅和/或硅离子，以及在衬底中注入硅和/或硅离子。

公开(公告)号：US20160020102A1

公开(公告)日：2016-01-21

申请号：US14378963

申请日：2013-02-13

Applicant: Entegris, Inc

Inventor： Oleg Byl ,  Edward A. Sturm ,  Ying Tang ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Barry Lewis Chambers

IPC: H01L21/265 ,  H01L33/00 ,  H01J37/317 ,  H01L31/18

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01L31/18 ,  H01L33/005

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

Abstract translation: 描述了离子注入工艺和系统，其中使用碳掺杂剂源材料来实现碳掺杂。 描述了各种气体混合物，包括碳掺杂剂源材料，以及用于这种碳掺杂的气体的共流组合。 描述了在碳掺杂剂源材料中提供原位清洁剂，以及碳掺杂剂源气体，氢化物气体，氟化物气体，惰性气体，氧化物气体和其它气体的特定组合。

公开(公告)号：US20170330726A1

公开(公告)日：2017-11-16

申请号：US15593486

申请日：2017-05-12

Applicant: Entegris, Inc.

Inventor： Barry Lewis Chambers ,  Biing-Tsair Tien ,  Joseph D. Sweeney ,  Ying Tang ,  Oleg Byl ,  Steven E. Bishop ,  Sharad N. Yedave

IPC: H01J37/317 ,  C09D5/24 ,  C09D1/00 ,  H01J37/32 ,  H01L21/67 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C09D1/00 ,  C09D5/24 ,  H01J37/026 ,  H01J37/3244 ,  H01J2237/006 ,  H01J2237/022 ,  H01L21/265 ,  H01L21/67213

Abstract: Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N2) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF3, N2F4, F2, SiF4, WF6, PF3, PF5, AsF3, AsF5, CF4 and other fluorinated hydrocarbons of CxFy (x≧1, y≧1) general formula, SF6, HF, COF2, OF2, BF3, B2F4, GeF4, XeF2, O2, N2O, NO, NO2, N2O4, and O3, and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H2, NH3, N2H4, B2H6, AsH3, PH3, SiH4, Si2H6, H2S, H2Se, CH4 and other hydrocarbons of CxHy (x≧1, y≧1) general formula and GeH4.

公开(公告)号：US20150357152A1

公开(公告)日：2015-12-10

申请号：US14827783

申请日：2015-08-17

Applicant: Entegris, Inc.

Inventor： Edward E. Jones ,  Sharad N. Yedave ,  Ying Tang ,  Barry Lewis Chambers ,  Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Peng Zou

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022

Abstract: An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, equilibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

Abstract translation: 一种离子注入系统和方法，用于提供掺杂剂气体进料管线中的掺杂气体的冷却，以通过例如使用诸如B2F4的硼源材料或BF3的其他替代物来通过电弧室发热来防止掺杂气体的加热和分解。 描述了各种电弧室热管理布置，以及等离子体性质，特定流量布置，清洁过程，功率管理，平衡偏移，提取光学优化，流动通道沉积物检测和源寿命优化等方面的改进，以实现高效率 离子注入系统的操作。

公开(公告)号：US11682540B2

公开(公告)日：2023-06-20

申请号：US17466362

申请日：2021-09-03

Applicant: Entegris, Inc.

Inventor： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Oleg Byl

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.