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    LASER DIODE AND MANUFACTURING METHOD OF THE SAME
    14.
    发明申请
    LASER DIODE AND MANUFACTURING METHOD OF THE SAME 有权

    公开(公告)号：US20220255291A1

    公开(公告)日：2022-08-11

    申请号：US17561212

    申请日：2021-12-23

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    Inventor： Su Hwan OH ,  Oh Kee KWON ,  Chul-Wook LEE ,  Kisoo KIM

    IPC: H01S5/026 ,  H01S5/125

    Abstract: Provided is a laser diode and a method for manufacturing the same. The diode includes a substrate including a DBR region having a channel hole, an active region, and a phase shift region, an optical waveguide provided on the substrate and extending from the active region to the DBR region, a lower insulation layer disposed on the optical waveguide, upper electrodes disposed on the lower insulation layer, and a heat blocking layer disposed in the channel hole of the DBR region and thermally separating the optical waveguide from the substrate.

    LASER DEVICE
    15.
    发明申请
    LASER DEVICE 有权

    公开(公告)号：US20210288463A1

    公开(公告)日：2021-09-16

    申请号：US17182976

    申请日：2021-02-23

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Oh Kee KWON ,  Kisoo KIM ,  Su Hwan OH ,  Chul-Wook LEE

    IPC: H01S5/026 ,  H01S5/068 ,  H01S5/042

    Abstract: Provided is a laser device according to embodiments of the inventive concept comprising a substrate including a gain region, a phase control region, and a tuning region arranged along a first direction, the substrate having an air gap which extends from the phase control region to the tuning region, an upper clad layer on the substrate, a waveguide structure extending in the first direction between the upper clad layer and the substrate, a first upper electrode disposed on the upper surface of the upper clad layer of the tuning region, and a lower electrode disposed on a lower surface of the substrate and extending from the gain region to the tuning region, wherein the air gap may have a larger width than the waveguide in a second direction crossing the first direction.

    DISTRIBUTED BRAGG REFLECTOR RIDGE LASER DIODE AND FABRICATING METHOD THEREOF
    18.
    发明申请
    DISTRIBUTED BRAGG REFLECTOR RIDGE LASER DIODE AND FABRICATING METHOD THEREOF 审中-公开
    分布式BRAGG反射器RIDGE激光二极管及其制造方法

    公开(公告)号：US20150349491A1

    公开(公告)日：2015-12-03

    申请号：US14601780

    申请日：2015-01-21

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    Inventor： Oh Kee KWON ,  Su Hwan OH ,  Chul Wook LEE

    IPC: H01S5/125 ,  H01S5/028 ,  H01S5/20 ,  H01S5/22 ,  H01S5/042

    CPC classification number: H01S5/125 ,  H01S5/0425 ,  H01S5/06256 ,  H01S5/162 ,  H01S5/22

    Abstract: Provided herein is a distributed bragg reflector ridge laser diode that is capable of easily embodying a diffraction grating and that minimizes an optical absorption effect on a DBR area, and a fabricating method thereof, the distributed bragg reflector ridge laser diode including a lower clad layer formed on top of a substrate; an active core zone formed on top of the lower clad layer; a plurality of ridge wave guides formed on top of the active core zone such that they are spaced from one another and extend in an axial direction; and a diffraction grating formed on top of the active core zone and between the plurality of ridge wave guides.

    Abstract translation: 本发明提供一种能够容易地体现衍射光栅并且最小化对DBR区域的光吸收效果的分布式布拉格反射器脊激光二极管及其制造方法，所述分布式布拉格反射器脊激光二极管包括形成的下包层 在基材的顶部; 形成在下包层顶部的活性芯区; 多个脊形波导形成在活性芯区的顶部，使得它们彼此间隔开并沿轴向方向延伸; 以及形成在有源芯区域的顶部和多个脊波导之间的衍射光栅。

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