Abstract:
Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
Abstract:
Provided is a flat-top mode generating device. The flat-top mode generating device includes an input waveguide, a double-tapered structure connected to the input waveguide, and an input star coupler connected to the double-tapered structure. The double-tapered structure includes a first part having a first height hat is equal to that of each of the input waveguide and the input star coupler, and a second part disposed in the first part on the plane and having a second height that is less than the first height, the second part being tapered from the input star coupler toward the input waveguide.
Abstract:
Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.
Abstract:
Provided is an optical coupler including a substrate, a buffer layer on the substrate, a ridge waveguide having a first side surface and a second side surface opposed to the first side surface, and a first waveguide disposed adjacent to the second side surface. The first waveguide includes a first body part and a first connecting part extending from one end of the first body part to be inserted in the ridge waveguide. The first connecting part has a width decreasing in the direction away from the second side surface, and the ridge waveguide includes an extension part extending under an upper surface of the buffer layer.
Abstract:
Provided is a wavelength combiner including a slab waveguide; an output waveguide extended from the slab waveguide in a first direction; and at least one rib waveguide disposed at an interval horizontally from the output waveguide and extended from the slab waveguide in the first direction, wherein the rib waveguide is tapered in the first direction.
Abstract:
Provided are an optical coupling device and a method for manufacturing the same. The optical coupling device includes a first waveguide including a first forward tapered part, a second waveguide disposed on the first waveguide and including a first reverse tapered part in a direction opposite to the first forward tapered part, and an interlayer waveguide disposed between the first and second waveguides and having a thickness corresponding to a distance between the first forward tapered part and the first reverse tapered part.
Abstract:
Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.
Abstract:
Provided is an optical modulator including an optical waveguide and an optical modulation part integrated on the optical waveguide that is clad in oxide silicon and has silicon as core by using a bulk silicon wafer in place of an silicon-on-insulator (SOI) used for a typical optical waveguide and optical modulator and using complementary metal oxide semiconductor (CMOS) and thermal oxide film formation processes, and a fabrication method thereof.
Abstract:
An optical coupling device comprises an optical fiber block including a first block part and a second block part contacting with one side of the first block part, an optical fiber penetrating the optical fiber block and having an end surface exposed at a bottom surface of the optical fiber block, a semiconductor chip disposed below the optical fiber block and having an optical input/output element disposed on a top surface of the semiconductor chip to correspond with the end surface of the optical fiber, and a planarization layer disposed on the top surface of the semiconductor chip and having a recess region. A bottom surface of the first block part has a higher level than that of the second block part. The bottom surface of the second block part contacts with a bottom of the recess region. The optical fiber is optically coupled with the optical input/output element.
Abstract:
Provided are an optical coupler and an optical device including the same. The optical coupler includes: a substrate; a buffer layer on the substrate; and an optical coupling layer including a horizontal mode expander layer and a vertical mode expander layer, wherein the horizontal mode expander layer expands in one direction on the buffer layer, and wherein the vertical mode expander layer adjusts a stepped difference between the horizontal mode expander layer and a plurality of optical transmission devices having different diameters or sectional areas and connected to both sides of the horizontal mode expander layer, and the vertical mode expander layer is disposed on a side of the horizontal mode expander layer to minimize optical loss between the plurality of optical transmission devices.