公开(公告)号：US20060068539A1

公开(公告)日：2006-03-30

申请号：US11225914

申请日：2005-09-13

申请人： Byung-Jun Park ,  Joon-Mo Kwon

发明人： Byung-Jun Park ,  Joon-Mo Kwon

IPC分类号： H01L21/8238 ,  H01L21/31

CPC分类号： H01L21/823835 ,  H01L21/823842

摘要： According to some embodiments, methods of fabricating a complementary metal oxide semiconductor (CMOS) type semiconductor device having dual gates are provided. The method includes forming an insulated first gate electrode on the P-type well, and an insulated second initial gate electrode on the N-type well. A first lower interlayer insulating layer exposing a top surface of the first gate electrode is formed on the P-type well while a second lower interlayer insulating layer exposing a top surface of the second initial gate electrode is formed on the N-type well. P-type impurity ions are selectively implanted into the second initial gate electrode to form a second gate electrode. A first ion implantation mask pattern is formed over the first gate electrode while a second ion implantation mask pattern is formed over the second gate electrode. The second lower interlayer insulating layer is etched, using the second ion implantation mask pattern as an etch mask, to expose a top surface of the N-type well. P-type impurity ions are implanted into the N-type well, using the second ion implantation mask pattern as an ion implantation mask, to form second source and drain regions on both sides of the second gate electrode.

摘要翻译： 根据一些实施例，提供制造具有双栅极的互补金属氧化物半导体（CMOS）型半导体器件的方法。 该方法包括在P型阱上形成绝缘的第一栅电极，在N型阱上形成绝缘的第二初始栅电极。 在P型阱上形成暴露第一栅电极的顶表面的第一下层间绝缘层，而在N型阱上形成暴露第二初始栅电极的顶表面的第二下层间绝缘层。 选择性地将P型杂质离子注入第二初始栅电极以形成第二栅电极。 在第一栅极上形成第一离子注入掩模图案，同时在第二栅电极上形成第二离子注入掩模图案。 使用第二离子注入掩模图案作为蚀刻掩模蚀刻第二下层间绝缘层，以暴露N型阱的顶表面。 使用第二离子注入掩模图案作为离子注入掩模将P型杂质离子注入到N型阱中，以在第二栅电极的两侧形成第二源区和漏区。

公开(公告)号：US20050018525A1

公开(公告)日：2005-01-27

申请号：US10625277

申请日：2003-07-23

申请人： Dong-Sauk Kim ,  Ho-Seok Lee ,  Byung-Jun Park ,  Il-Young Kwon ,  Jong-Min Lee ,  Hyeong-Soo Kim ,  Jin-Woong Kim ,  Hyung-Bok Choi ,  Dong-Woo Shin

发明人： Dong-Sauk Kim ,  Ho-Seok Lee ,  Byung-Jun Park ,  Il-Young Kwon ,  Jong-Min Lee ,  Hyeong-Soo Kim ,  Jin-Woong Kim ,  Hyung-Bok Choi ,  Dong-Woo Shin

IPC分类号： H01L21/8242 ,  G11C8/02 ,  H01L21/82 ,  H01L27/02 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/10855 ,  H01L27/0207 ,  H01L27/10814

摘要： Semiconductor devices and methods of manufacture thereof are disclosed that are capable of preventing a short of lower electrodes caused by a leaning or lifting phenomenon while forming the lower electrodes and securing enough capacitance of a capacitor by widening an effective capacitor area. The inventive semiconductor device includes: a plurality of capacitor plugs disposed in an orderly separation distance; and a plurality of lower electrodes used for a capacitor and disposed in an orderly separation distance to be respectively connected with the capacitor plugs.

摘要翻译： 公开了半导体装置及其制造方法，其能够通过扩大有效的电容器面积来形成下部电极并且通过扩大电容器的足够的电容来防止由倾斜或提升现象引起的较短的下部电极。 本发明的半导体器件包括：以有序的间隔距离设置的多个电容器插头; 以及多个用于电容器的下电极，并且以与电容器插头分别连接的有序分隔距离设置。

公开(公告)号：US06727542B2

公开(公告)日：2004-04-27

申请号：US10246392

申请日：2002-09-19

申请人： Ki-Nam Kim ,  Byung-Jun Park

发明人： Ki-Nam Kim ,  Byung-Jun Park

IPC分类号： H01L27108

CPC分类号： H01L27/10894 ,  H01L21/76897 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10882 ,  H01L28/55 ,  H01L28/91

摘要： A semiconductor memory device and a method for manufacturing the same are provided. The semiconductor memory device includes an oxide layer for isolating individual devices which define device areas so that a cell area and a peripheral circuit area are separated from each other on a semiconductor substrate, a plurality of MOS transistors, which are comprised of source areas, drain areas, and gates that are formed in the cell area and the peripheral circuit area, a bit line, which is formed on the plurality of MOS transistors and is electrically connected to the MOS transistor, a stack-shaped capacitor, which is comprised of a first electrode, a dielectric layer, and a second electrode between which the MOS transistors and the bit line in the cell area is interposed, a guard-ring pattern, which are interposed between the cell area and the peripheral circuit area, surrounds the cell area and is apart from the peripheral circuit area, and a contact fill for plate electrode, which is formed in the guard-ring pattern and is in contact with the second electrode that is formed on the internal sidewall and the bottom of the guard-ring pattern. The guard-ring pattern is formed in a boundary between the cell area and the peripheral circuit area while surrounding the cell area, and thereby step caused by manufacture of the stack-shaped capacitor are removed during a manufacturing process, and the contact fill for plate electrode is formed in the guard-ring pattern, and thereby the ground resistance of the capacitor is reduced, and the electrical characteristics of the memory device are improved.

摘要翻译： 提供半导体存储器件及其制造方法。 半导体存储器件包括用于隔离各个器件的氧化物层，其限定器件区域，使得在半导体衬底上的单元区域和外围电路区域彼此分离，由源极区域构成的多个MOS晶体管，漏极 形成在单元区域和外围电路区域中的区域和栅极，形成在多个MOS晶体管上并与MOS晶体管电连接的位线，堆叠形状的电容器，其由 第一电极，电介质层和第二电极，MOS晶体管和单元区域中的位线之间插入有保护环图形，其间插入在单元区域和外围电路区域之间，围绕单元区域 并且与外围电路区域分离，并且用于平板电极的接触填充物，其形成为保护环图案并与形成的第二电极接触 在内侧壁和保护环图案的底部。 保护环图案形成在单元区域和外围电路区域之间的边界周围，同时围绕单元区域，并且由此在制造过程中除去堆叠形电容器的制造所引起的步骤，并且板的接触填充 电极形成为保护环图案，从而降低了电容器的接地电阻，并提高了存储器件的电气特性。

公开(公告)号：US09608026B2

公开(公告)日：2017-03-28

申请号：US14726935

申请日：2015-06-01

申请人： Byung-Jun Park ,  Seung-Hun Shin

发明人： Byung-Jun Park ,  Seung-Hun Shin

IPC分类号： H01L31/0224 ,  H01L23/48 ,  H01L31/101 ,  H01L31/02 ,  H01L31/14 ,  H01L31/0232 ,  H01L27/146 ,  H01L21/768

CPC分类号： H01L27/14645 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/022408 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of manufacturing an integrated circuit device including a through via structure are provided. The methods may include forming an isolation trench through a substrate to form an inner substrate, which is enclosed by the isolation trench and forming an insulating layer in the isolation trench and on a surface of the substrate. The methods may also include forming a hole, which is spaced apart from the isolation trench and passes through a portion of the insulating layer formed on the surface of the substrate and the inner substrate and forming a conductive layer in the hole and on the insulating layer formed on the surface of the substrate. The methods may be used to manufacture image sensors.

公开(公告)号：US08916911B2

公开(公告)日：2014-12-23

申请号：US13180898

申请日：2011-07-12

申请人： Gil-Sang Yoo ,  Chang-Rok Moon ,  Byung-Jun Park ,  Sang-Hoon Kim ,  Seung-Hun Shin

发明人： Gil-Sang Yoo ,  Chang-Rok Moon ,  Byung-Jun Park ,  Sang-Hoon Kim ,  Seung-Hun Shin

IPC分类号： H01L27/148 ,  H01L27/146 ,  H04N5/225

CPC分类号： H01L27/14636 ,  H01L27/14603 ,  H01L27/14618 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689 ,  H01L2224/13 ,  H04N5/2253 ,  H04N5/2254

摘要： A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.

摘要翻译： 半导体衬底包括在支撑衬底上的光电二极管。 在支撑基板和半导体基板之间设置绝缘层。 第一导电图案设置在绝缘层中。 第一穿透电极穿透支撑衬底以与第一导电图案接触。

公开(公告)号：US08471300B2

公开(公告)日：2013-06-25

申请号：US13416624

申请日：2012-03-09

申请人： Byung-Jun Park

发明人： Byung-Jun Park

IPC分类号： H01L27/148 ,  H01L31/0232

CPC分类号： H01L31/02327 ,  H01L27/14601 ,  H01L27/14629 ,  H01L27/1464

摘要： An image sensor device includes a substrate including a light sensing region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.

摘要翻译： 图像传感器装置包括其中包括光感测区域的基板和在光感测区域上的基板的第一表面上的反射结构。 具有比反射结构低的反射率的互连结构设置在与反射结构相邻的基板的第一表面上。 在与第一表面相对的基板的第二表面上提供微透镜。 微透镜被配置为将入射光引导到光感测区域，并且反射结构被配置为将穿过光感测区域的入射光的部分反射回光感测区域。 还讨论了相关设备和制造方法。

公开(公告)号：US08170568B2

公开(公告)日：2012-05-01

申请号：US12322585

申请日：2009-02-04

申请人： Byung-Jun Park

发明人： Byung-Jun Park

IPC分类号： H04W72/00

CPC分类号： H04W72/0453 ,  H04W8/26 ,  H04W72/0413

摘要： An apparatus of setting multi-channels in a network system includes a mobile station transmitting at least one piece of channel information on a request message, wherein the request message requests to set a connection identifier for a communication service; and a control station calculating a bandwidth according to number of channels using the request message received from the mobile station and setting the calculated bandwidth as a service bandwidth of the connection identifier. The control station such as an ACR supports multi-channels through one frame structure (i.e., a communication structure of a connection identifier) and thus radio resources (e.g., bandwidth) to be provided to the mobile station are reduced.

摘要翻译： 一种在网络系统中设置多信道的装置，包括移动台，发送关于请求消息的至少一条信道信息，其中请求消息请求设置通信业务的连接标识符; 以及控制站，使用从移动站接收到的请求消息，根据信道数计算带宽，并将计算出的带宽设置为连接标识符的服务带宽。 诸如ACR的控制站通过一帧结构（即，连接标识符的通信结构）支持多信道，因此减少了要提供给移动台的无线电资源（例如，带宽）。

公开(公告)号：US07756211B2

公开(公告)日：2010-07-13

申请号：US11219921

申请日：2005-09-06

申请人： Ji-Hyung Kim ,  Dae-Sik Hong ,  Dong-Jun Lee ,  Jong-Han Kim ,  Byung-Jun Park ,  Jong-Ae Park

发明人： Ji-Hyung Kim ,  Dae-Sik Hong ,  Dong-Jun Lee ,  Jong-Han Kim ,  Byung-Jun Park ,  Jong-Ae Park

IPC分类号： H04B7/02

CPC分类号： H04B7/0842 ,  H04B7/04 ,  H04B7/0851

摘要： A channel estimation method in a Multiple Input Multiple Output (MIMO) mobile communication system having a plurality of transmission antennas and a plurality of reception antennas is provided. In a method of transmitting, by a transmitter, channel estimation signals for channel estimation at a receiver, the transmission antennas transmit the same channel estimation signals for a first frame transmission duration, and transmit predetermined channel estimation signals corresponding to the number of the transmission antennas for a second frame transmission duration.

摘要翻译： 提供了具有多个发送天线和多个接收天线的多输入多输出（MIMO）移动通信系统中的信道估计方法。 在发射机发送信道估计信号的方法中，发送天线在第一帧传输持续时间内传输相同的信道估计信号，并发送对应于发送天线数量的预定信道估计信号 用于第二帧传输持续时间。

公开(公告)号：US20100006969A1

公开(公告)日：2010-01-14

申请号：US12458014

申请日：2009-06-29

申请人： Byung-Jun Park ,  Sang-Hee Kim

发明人： Byung-Jun Park ,  Sang-Hee Kim

IPC分类号： H01L23/52 ,  H01L21/30 ,  H01L21/28

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

摘要： A method of fabricating a CMOS image sensor includes forming a substrate structure that includes a first substrate, a second substrate, and an index matching layer containing nitrogen and an oxide layer between the first and second substrates, and, forming at least one light-sensing device in the second substrate, and after forming the substrate structure, forming a metal interconnection structure on a first surface of the second substrate, the first surface facing away from the first substrate, such that the at least one light sensing device is between the metal interconnection structure and the index matching layer and the oxide layer, the metal interconnection structure being electrically connected to the at least one light-sensing device.

摘要翻译： 一种CMOS图像传感器的制造方法，包括在第一和第二基板之间形成包括第一基板，第二基板和包含氮和氧化物层的折射率匹配层的基板结构，并且形成至少一个光感测 装置，并且在形成所述基板结构之后，在所述第二基板的第一表面上形成金属互连结构，所述第一表面背离所述第一基板，使得所述至少一个光感测装置在所述金属 互连结构和折射率匹配层和氧化物层，金属互连结构电连接到至少一个光感测装置。

公开(公告)号：US20090140365A1

公开(公告)日：2009-06-04

申请号：US12287068

申请日：2008-10-06

申请人： Yun-Ki Lee ,  Byung-Jun Park

发明人： Yun-Ki Lee ,  Byung-Jun Park

IPC分类号： H01L31/101

CPC分类号： H01L27/14636 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14603 ,  H01L27/1464 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： An image sensor includes a circuit substrate, a plurality of isolation regions, a plurality of photoelectric converters, and an insulation layer. The isolation regions are formed in a pixel region having the photoelectric converters formed therein with each photoelectric converter being electrically isolated by the isolation regions. The insulation layer is formed in a pad region with a substantially same depth as the isolation regions. The isolation region and the insulation layer are simultaneously formed for efficient fabrication of the image sensor.

摘要翻译： 图像传感器包括电路基板，多个隔离区域，多个光电转换器和绝缘层。 隔离区形成在其中形成有光电转换器的像素区域中，每个光电转换器由隔离区电隔离。 绝缘层形成在与隔离区域基本相同的深度的焊盘区域中。 同时形成隔离区域和绝缘层，以有效地制造图像传感器。