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    Method of manufacturing a CMOS image sensor
    4.
    发明授权
    Method of manufacturing a CMOS image sensor 失效
    CMOS图像传感器的制造方法

    公开(公告)号：US08043927B2

    公开(公告)日：2011-10-25

    申请号：US12457773

    申请日：2009-06-22

    申请人： Byung-Jun Park ,  Tae-Hun Lee ,  Seung-Hun Shin

    发明人： Byung-Jun Park ,  Tae-Hun Lee ,  Seung-Hun Shin

    IPC分类号： H01L21/76

    CPC分类号： H01L27/14683 ,  H01L27/1463 ,  H01L27/1464 ,  Y10S438/975

    摘要： In a method of manufacturing a complementary metal-oxide semiconductor (CMOS) image sensor (CIS), an epitaxial layer may be formed on a first substrate including a chip area and a scribe lane area. A first impurity layer may be formed adjacent to the first substrate by implanting first impurities into the epitaxial layer. A photodiode may be formed in the epitaxial layer on the chip area. A circuit element electrically connected to the photodiode may be formed on the epitaxial layer. A protective layer protecting the circuit element may be formed on the epitaxial layer. A second substrate may be attached onto the protective layer. The first substrate may be removed to expose the epitaxial layer. A color filter layer may be formed on the exposed epitaxial layer using the first impurity layer as an alignment key. A microlens may be formed over the color filter layer.

    摘要翻译： 在制造互补金属氧化物半导体（CMOS）图像传感器（CIS）的方法中，可以在包括芯片区域和划线区域的第一基板上形成外延层。 可以通过将第一杂质注入到外延层中而与第一衬底相邻地形成第一杂质层。 可以在芯片区域上的外延层中形成光电二极管。 电连接到光电二极管的电路元件可以形成在外延层上。 可以在外延层上形成保护电路元件的保护层。 第二基底可以附着在保护层上。 可以去除第一衬底以暴露外延层。 可以使用第一杂质层作为对准键，在暴露的外延层上形成滤色器层。 可以在滤色器层上形成微透镜。

    Image sensor and method of manufacturing the same
    5.
    发明申请
    Image sensor and method of manufacturing the same 审中-公开
    图像传感器及其制造方法

    公开(公告)号：US20090085143A1

    公开(公告)日：2009-04-02

    申请号：US12285148

    申请日：2008-09-30

    申请人： Byung-Jun Park

    发明人： Byung-Jun Park

    IPC分类号： H01L27/146 ,  B44C1/22

    CPC分类号： H01L27/14603 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683

    摘要： Image sensors and methods of fabricating the same are provided. An image sensor may include a substrate, a first pad provided on a front side of the substrate, a second pad provided on a backside of the substrate, one or more contacts, each of the contacts passing through the substrate and electrically connecting the first pad with the second pad, and one or more guard rings, each of the guard rings surrounding one or more contacts and having insulating characteristics.

    摘要翻译： 提供了图像传感器及其制造方法。 图像传感器可以包括基板，设置在基板的前侧上的第一焊盘，设置在基板的背面上的第二焊盘，一个或多个触点，每个触点穿过基板并电连接第一焊盘 与第二焊盘和一个或多个保护环，每个保护环围绕一个或多个触点并具有绝缘特性。

    Image sensor and method of manufacturing the same
    6.
    发明授权
    Image sensor and method of manufacturing the same 有权
    图像传感器及其制造方法

    公开(公告)号：US07411173B2

    公开(公告)日：2008-08-12

    申请号：US11447411

    申请日：2006-06-06

    申请人： Byung-Jun Park

    发明人： Byung-Jun Park

    IPC分类号： H01L31/00

    CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14689

    摘要： An image sensor is provided. The image sensor includes a photodiode disposed in a semiconductor substrate and a first device isolating layer formed having an impurity with a conductivity type in the semiconductor substrate adjacent to the photodiode. The image sensor further includes a second device isolating layer composed of an insulating layer that covers the first device isolating layer. In addition, the image sensor further includes an interlayer insulating layer formed on the second device isolating layer and which is composed of a material with refractivity greater than that of the second device isolating layer.

    摘要翻译： 提供图像传感器。 图像传感器包括设置在半导体衬底中的光电二极管和在半导体衬底中邻近光电二极管形成具有导电类型杂质的第一器件隔离层。 图像传感器还包括由覆盖第一器件隔离层的绝缘层构成的第二器件隔离层。 此外，图像传感器还包括形成在第二器件隔离层上并由折射率大于第二器件隔离层的折射率的材料构成的层间绝缘层。

    Methods of fabricating image sensors
    7.
    发明申请
    Methods of fabricating image sensors 有权
    制作图像传感器的方法

    公开(公告)号：US20070196947A1

    公开(公告)日：2007-08-23

    申请号：US11706371

    申请日：2007-02-15

    申请人： Gil-Sang Yoo ,  Byung-Jun Park

    发明人： Gil-Sang Yoo ,  Byung-Jun Park

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14687

    摘要： A method of fabricating an image sensor which reduces fabricating costs through simultaneous formation of capacitor structures and contact structures may be provided. The method may include forming a lower electrode on a substrate, forming an interlayer insulating film on the substrate, the interlayer insulating film may have a capacitor hole to expose a first portion of the lower electrode. The method may further include forming a dielectric film on at least the first portion of the lower electrode, forming a first contact hole in the interlayer insulating film to expose a second portion of the lower electrode, forming a first conductive layer in at least the first contact hole and the capacitor hole, forming a second conductive layer on the first conductive layer to fill and cover the capacitor hole and the first contact hole, and planarizing the second conductive layer to simultaneously form a capacitor plug in the capacitor hole, a first contact plug in the first contact hole, an upper electrode beneath the capacitor plug, and a first contact barrier film beneath the first contact plug.

    摘要翻译： 可以提供制造图像传感器的方法，该图像传感器通过同时形成电容器结构和接触结构来降低制造成本。 该方法可以包括在基板上形成下电极，在基板上形成层间绝缘膜，层间绝缘膜可以具有电容器孔，露出下电极的第一部分。 所述方法还可以包括在所述下电极的至少第一部分上形成电介质膜，在所述层间绝缘膜中形成第一接触孔，以暴露所述下电极的第二部分，形成至少第一导电层的第一导电层 接触孔和电容器孔，在第一导电层上形成第二导电层，以填充和覆盖电容器孔和第一接触孔，并且平坦化第二导电层以同时在电容器孔中形成电容器插头，第一接触 插入第一接触孔，电容器插头下方的上电极和第一接触插塞下方的第一接触阻挡膜。

    Method for fabricating capacitor of semiconductor device
    9.
    发明授权
    Method for fabricating capacitor of semiconductor device 失效
    制造半导体器件电容器的方法

    公开(公告)号：US07105417B2

    公开(公告)日：2006-09-12

    申请号：US10615291

    申请日：2003-07-09

    申请人： Ik-Soo Choi ,  Byung-Jun Park ,  Il-Young Kwon

    发明人： Ik-Soo Choi ,  Byung-Jun Park ,  Il-Young Kwon

    IPC分类号： H01L21/20

    CPC分类号： H01L28/75 ,  H01L21/76895 ,  H01L27/10852 ,  H01L27/11507

    摘要： The present invention provides a method of fabricating a capacitor for a semiconductor device. The method includes: forming sequentially a lower electrode and a dielectric layer having a high dielectric constant over a semiconductor substrate which have gone through predetermined processes; forming sequentially a first metal layer and a poly-silicon layer over the dielectric layer; forming an upper electrode pattern by pattering the poly-silicon layer and the first metal layer; forming a second metal layer covering the upper electrode pattern on an entire surface of the semiconductor substrate; and forming an upper electrode constituted with the second metal layer, the poly-silicon layer and the first metal layer by patterning the second metal layer so that the second metal layer is connected with the first metal layer.

    摘要翻译： 本发明提供一种制造用于半导体器件的电容器的方法。 该方法包括：在经过预定处理的半导体衬底上依次形成具有高介电常数的下电极和介电层; 在电介质层上依次形成第一金属层和多晶硅层; 通过图案化所述多晶硅层和所述第一金属层形成上电极图案; 在所述半导体衬底的整个表面上形成覆盖所述上电极图案的第二金属层; 以及通过对所述第二金属层进行构图而形成由所述第二金属层，所述多晶硅层和所述第一金属层构成的上电极，使得所述第二金属层与所述第一金属层连接。

    Method of manufacturing a semiconductor device having selective epitaxial silicon layer on contact pads
    10.
    发明授权
    Method of manufacturing a semiconductor device having selective epitaxial silicon layer on contact pads 失效
    在接触焊盘上制造具有选择性外延硅层的半导体器件的方法

    公开(公告)号：US07052983B2

    公开(公告)日：2006-05-30

    申请号：US10688017

    申请日：2003-10-16

    申请人： Byung-Jun Park ,  Ji-Young Kim

    发明人： Byung-Jun Park ,  Ji-Young Kim

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76877 ,  H01L21/76831 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/0207 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Wirings including first conductive layer patterns and insulating mask layer patterns are formed on a substrate. Insulating spacers are formed on sidewalls of the wirings. Self-aligned contact pads including portions of a second conductive layer are formed to contact with surfaces of the insulating spacers and to fill up a gap between the wirings. An interlayer dielectric layer is formed on the substrate where the contact pads are formed and is then partially etched to form contact holes exposing the contact pads. A selective epitaxial silicon layer is formed on the contact pads exposed through the contact holes to cover the insulating mask layer patterns. Thus, a short-circuit between the lower wiring and an upper wiring formed in the contact holes is prevented.

    摘要翻译： 在基板上形成包括第一导电层图案和绝缘掩模层图案的布线。 绝缘垫片形成在布线的侧壁上。 形成包括第二导电层的部分的自对准接触焊盘与绝缘间隔物的表面接触并填充布线之间的间隙。 在形成接触焊盘的基板上形成层间电介质层，然后将其部分地蚀刻以形成暴露接触焊盘的接触孔。 在通过接触孔暴露的接触焊盘上形成选择性外延硅层以覆盖绝缘掩模层图案。 因此，防止下布线和形成在接触孔中的上布线之间的短路。