发明授权
- 专利标题： Image sensor and method of manufacturing the same
- 专利标题（中）： 图像传感器及其制造方法
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申请号： US11447411申请日： 2006-06-06
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公开(公告)号： US07411173B2公开(公告)日： 2008-08-12
- 发明人: Byung-Jun Park
- 申请人： Byung-Jun Park
- 申请人地址： KR Suwon-Si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-Si
- 代理机构： F. Chau & Associates, LLC.
- 优先权： KR10-2005-0092667 20051001
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
An image sensor is provided. The image sensor includes a photodiode disposed in a semiconductor substrate and a first device isolating layer formed having an impurity with a conductivity type in the semiconductor substrate adjacent to the photodiode. The image sensor further includes a second device isolating layer composed of an insulating layer that covers the first device isolating layer. In addition, the image sensor further includes an interlayer insulating layer formed on the second device isolating layer and which is composed of a material with refractivity greater than that of the second device isolating layer.
公开/授权文献
- US20070075221A1 Image sensor and method of manufacturing the same 公开/授权日：2007-04-05
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