公开(公告)号：US06777730B2

公开(公告)日：2004-08-17

申请号：US10230474

申请日：2002-08-29

Applicant: James M. Daughton ,  Arthur V. Pohm ,  Dexin Wang

Inventor： James M. Daughton ,  Arthur V. Pohm ,  Dexin Wang

IPC: H01L31119

CPC classification number: G11C11/15 ,  B82Y10/00 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329 ,  H01L27/228

Abstract: A ferromagnetic thin-film based digital memory having a plurality of bit structures electrically interconnected with information storage and retrieval circuitry that avoids information loss in one bit structure because of operating the others through this circuitry. Each of these bit structures formed of a relative orientation maintenance intermediate layer having two major surfaces on opposite sides thereof with a pair of memory films of an anisotropic ferromagnetic material each on a corresponding one of said relative orientation maintenance intermediate layer major surfaces. The relative orientation maintenance intermediate layer is of a material and a selected thickness so as to maintain magnetizations of said memory films oriented in substantially opposite directions. Interconnection electrodes pairs are each in electrically conductive contact with a corresponding one of the bit structures on substantially opposite sides thereof near or at substantially opposite edges of the relative orientation maintenance intermediate layer major surface. A magnetization reference direction layer able to maintain relatively well its magnetization orientation can be provided across a nonmagnetic layer from one of the pair of memory films with the nonmagnetic layer being either electrically conductive or insulative.

Abstract translation: 一种基于铁磁薄膜的数字存储器，其具有与信息存储和检索电路电互连的多个位结构，其避免了由于通过该电路操作其它位而导致的一位结构中的信息丢失。 这些位结构中的每一个由相对取向维护中间层形成，其相对侧面上具有两个主表面，其中一对各向异性铁磁材料的记忆膜各自位于所述相对取向维护中间层主表面的对应的一个。 相对取向维持中间层具有材料和选定的厚度，以便使所述记忆膜的磁化保持在基本上相反的方向上。 互连电极对在相对方向维护中间层主表面附近或基本上相对的边缘的基本上相对的两侧与相应的位结构导电接触。 能够相对良好地保持其磁化取向的磁化参考方向层可以跨越一对存储膜中的一个非磁性层提供，其中非磁性层是导电的或绝缘的。

公开(公告)号：US5636159A

公开(公告)日：1997-06-03

申请号：US369098

申请日：1995-01-05

Applicant: Arthur V. Pohm

Inventor： Arthur V. Pohm

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/15 ,  G11C11/16

Abstract: A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.

Abstract translation: 具有多个位置的数字存储器，其中选择性地重合电流可以被选择以在一对字线结构中流动，或者与具有与复合线结构（可能是位线结构）配对的字线结构一起流动以继续存在或 在复合线结构中切换到相反的边缘磁化状态，或者替代地，继续或切换用于磁偏置这种复合线结构的存储膜单元中的磁化状态。

公开(公告)号：US5424236A

公开(公告)日：1995-06-13

申请号：US86049

申请日：1993-07-01

Applicant: James M. Daughton ,  Arthur V. Pohm

Inventor： James M. Daughton ,  Arthur V. Pohm

IPC: G11C11/15 ,  H01F10/32 ,  H01L43/08 ,  H01L21/70 ,  H01L27/00

CPC classification number: B82Y25/00 ,  G11C11/15 ,  H01F10/324 ,  H01L43/08

Abstract: A digital memory having a plurality of electrically connected bit structures extending over a path with adjacent ones offset from one another in a direction substantially perpendicular to that path. The bit structures are formed of two ferromagnetic films with an exchange coupling barrier therebetween.

Abstract translation: 一种具有多个电连接的位结构的数字存储器，所述多个电连接的位结构在相邻的路径上延伸，所述相邻的位在基本上垂直于该路径的方向上彼此偏移。 位结构由两个铁磁膜形成，其间具有交换耦合屏障。

公开(公告)号：US5251170A

公开(公告)日：1993-10-05

申请号：US786128

申请日：1991-11-04

Applicant: James M. Daughton ,  Arthur V. Pohm

Inventor： James M. Daughton ,  Arthur V. Pohm

IPC: G11C11/15 ,  H01F10/32 ,  H01L43/08

CPC classification number: B82Y25/00 ,  G11C11/15 ,  H01F10/324 ,  H01L43/08

Abstract: A digital memory having a plurality of electrically connected bit structures extending over a path with adjacent ones offset from one another in a direction substantially perpendicular to that path. The bit structures are formed of two ferromagnetic films with an exchange coupling barrier therebetween.

Abstract translation: 一种具有多个电连接的位结构的数字存储器，所述多个电连接的位结构在相邻的路径上延伸，所述多个相邻的位在基本上垂直于该路径的方向上 位结构由两个铁磁膜形成，其间具有交换耦合屏障。

公开(公告)号：US07266013B2

公开(公告)日：2007-09-04

申请号：US11651729

申请日：2007-01-10

Applicant: James M. Daughton ,  Arthur V. Pohm

Inventor： James M. Daughton ,  Arthur V. Pohm

IPC: G11C11/14 ,  G11C11/15

CPC classification number: G11C11/16 ,  G11C11/15 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

Abstract: A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

Abstract translation: 一种基于铁磁性薄膜的数字存储器，其中具有磁性材料膜的位结构，其中磁性材料膜的磁性能保持在低于不能保持这种磁性的临界温度以下，并且还可以具有多个字线结构，每个具有 在相应的一个位结构中位于磁性材料膜两侧的加热部分。 这些位结构被充分热隔离，以允许相邻字线或位结构中的选定电流或两者都选择性地加热位结构以接近临界温度。 这种钻头结构可以具有三个磁性材料层，每个磁性材料层具有其自身的临界温度以维持而不保持其磁性。

公开(公告)号：US07177178B2

公开(公告)日：2007-02-13

申请号：US11292635

申请日：2005-12-02

Applicant: James M. Daughton ,  Arthur V. Pohm

Inventor： James M. Daughton ,  Arthur V. Pohm

IPC: G11C11/14 ,  G11C11/15

CPC classification number: G11C11/16 ,  G11C11/15 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

Abstract: A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

Abstract translation: 一种基于铁磁性薄膜的数字存储器，其中具有磁性材料膜的位结构，其中磁性材料膜的磁性能保持在低于不能保持这种磁性的临界温度以下，并且还可以具有多个字线结构，每个具有 在相应的一个位结构中位于磁性材料膜两侧的加热部分。 这些位结构被充分热隔离，以允许相邻字线或位结构中的选定电流或两者都选择性地加热位结构以接近临界温度。 这种钻头结构可以具有三个磁性材料层，每个磁性材料层具有其自身的临界温度以维持而不保持其磁性。

公开(公告)号：US07023723B2

公开(公告)日：2006-04-04

申请号：US10706613

申请日：2003-11-12

Applicant: James M. Daughton ,  Arthur V. Pohm

Inventor： James M. Daughton ,  Arthur V. Pohm

IPC: G11C11/14 ,  G11C11/15

CPC classification number: G11C11/16 ,  G11C11/15 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

Abstract: A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

公开(公告)号：US06963098B2

公开(公告)日：2005-11-08

申请号：US10875082

申请日：2004-06-23

Applicant: James M. Daughton ,  Arthur V. Pohm

Inventor： James M. Daughton ,  Arthur V. Pohm

IPC: G01R20060101 ,  G11C11/00 ,  G11C11/16 ,  H01L31/119

CPC classification number: H01L27/228 ,  G11C11/16 ,  H01L43/10

Abstract: A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained separated by at least one layer of a nonmagnetic material with each bit structure having an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection structure provides electrical contact thereto. Sufficient electrical current selectively drawn through each of these bit structures and its interconnection structure can cause substantial heating of that bit structure to raise temperatures thereof to have at least one of the magnetic material films therein at least approach its corresponding associated critical temperature while being substantially above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.

公开(公告)号：US06404191B2

公开(公告)日：2002-06-11

申请号：US09814637

申请日：2001-03-22

Applicant: James M. Daughton ,  Arthur V. Pohm

Inventor： James M. Daughton ,  Arthur V. Pohm

IPC: G11B5127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3948 ,  G11B5/3954 ,  G11B5/3967 ,  G11B5/488 ,  G11B5/59683 ,  G11B2005/3996

Abstract: A plurality of magnetic field sensing structures in a monolithic integrated circuit chip structure to provide output signals at outputs thereof of magnetic field changes provided therein from corresponding sources having poled pair structures with a gap space between them with adjacent ones of the magnetic field sensing structures that are interconnected with a circuit formed in the monolithic integrated circuit chip such as an amplifier. The paired pole structures may intersect a surface of the chip perpendicular to the major surfaces thereof or in one of, or a surface parallel to, the major surfaces thereof. A magnetic field generating structure may also be included in the chip.

Abstract translation: 单片集成电路芯片结构中的多个磁场感测结构，用于在其输出端提供输出信号，该输出信号由具有极化对结构的相应源提供，其中它们与相邻的磁场感测结构之间具有间隙， 与形成在诸如放大器的单片集成电路芯片中的电路互连。 成对的极结构可以垂直于芯片的主表面或与其主表面平行的一个或表面相交。 磁场产生结构也可以包括在芯片中。

公开(公告)号：US06340886B1

公开(公告)日：2002-01-22

申请号：US08907561

申请日：1997-08-08

Applicant: James M. Daughton ,  Arthur V. Pohm

Inventor： James M. Daughton ,  Arthur V. Pohm

IPC: G01R3309

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3954 ,  G11B2005/3996

Abstract: A magnetic field sensing structure for sensing magnetic field changes provided therein having a pair of pole structures with a gap space between them that each include permeable material and end in substantially a common surface. A plurality of field sensing structures is positioned successively in the gap space to be supported between the pole structures with each having an end thereof substantially the common surface. These sensing structures are formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic, electrically conductive layer positioned between them. They are electrically connected to one another adjacent the common surface, and may be electrically connected to one of the pole structures.

Abstract translation: 用于感测其中提供的磁场变化的磁场感测结构具有一对磁极结构，它们之间具有间隙，每个磁极结构包括可渗透材料并且终止于基本上共同的表面。 多个场感测结构连续地定位在间隙空间中，以支撑在极结构之间，每个具有基本上共同的表面。 这些感测结构由多个磁阻各向异性的强磁性薄膜层形成，其中至少两个薄膜层通过位于它们之间的非磁性导电层彼此分开。 它们相邻于公共表面彼此电连接，并且可以电连接到极结构中的一个。