公开(公告)号：US20210288084A1

公开(公告)日：2021-09-16

申请号：US17332766

申请日：2021-05-27

Applicant: Applied Materials, Inc.

Inventor： Xiangxin RUI ,  Soo Young CHOI ,  Shinichi KURITA ,  Yujia ZHAI ,  Lai ZHAO

IPC: H01L27/12 ,  H01L49/02 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56 ,  H01L21/687 ,  H01L21/67

Abstract: Embodiments of the present disclosure generally relate to a layer stack including a high K dielectric layer formed over a first dielectric layer and a metal electrode. The high K dielectric layer has a K value of 20 or higher and may be formed as a part of a capacitor, a gate insulating layer, or any suitable insulating layer in electronic devices, such as display devices. The layer stack includes a second dielectric layer disposed on the first dielectric layer and the metal layer, and the high K dielectric layer containing zirconium dioxide or hafnium dioxide disposed on the second dielectric layer. The second dielectric layer provides a homogenous surface on which the high K dielectric layer is formed. The homogeneous surface enables the high K dielectric material to be deposited uniformly thereover, resulting in a uniform thickness profile.

公开(公告)号：US20170365449A1

公开(公告)日：2017-12-21

申请号：US15626960

申请日：2017-06-19

Applicant: Applied Materials, Inc.

Inventor： Yi CUI ,  Robin L. TINER ,  Beom Soo PARK ,  Soo Young CHOI ,  Shinichi KURITA

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/458 ,  H05K9/00 ,  H01L21/687

CPC classification number: H01J37/32651 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32532 ,  H01J37/32577 ,  H01J37/32715 ,  H01J2237/3321 ,  H01L21/68742 ,  H01L21/68785 ,  H05K9/002

Abstract: Embodiments described herein generally relate to a substrate support assembly having a shield cover. In one embodiment, a substrate support assembly is disclosed herein. The substrate support assembly includes a support plate, a plurality of RF return straps, at least one shield cover, and a stem. The support plate is configured to support a substrate. The plurality of RF return straps are coupled to a bottom surface of the support plate. At least one shield cover is coupled to the bottom surface of the support plate, between the plurality of RF return straps and the bottom surface. The stem is coupled to the support plate.

公开(公告)号：US20170178867A1

公开(公告)日：2017-06-22

申请号：US15365497

申请日：2016-11-30

Applicant: Applied Materials, Inc.

Inventor： Jozef KUDELA ,  Allen K. LAU ,  Robin L. TINER ,  Gaku FURUTA ,  John M. WHITE ,  William Norman STERLING ,  Dongsuh LEE ,  Suhail ANWAR ,  Shinichi KURITA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/3321

Abstract: In one embodiment, a diffuser for a deposition chamber includes a plate having edge regions and a center region, and plurality of gas passages comprising an upstream bore and an orifice hole fluidly coupled to the upstream bore that are formed between an upstream side and a downstream side of the plate, and a plurality of grooves surrounding the gas passages, wherein a depth of the grooves varies from the edge regions to the center region of the plate.

公开(公告)号：US20170084880A1

公开(公告)日：2017-03-23

申请号：US15273181

申请日：2016-09-22

Applicant: Applied Materials, Inc.

Inventor： Shinichi KURITA ,  Ikuo MORI ,  Robin L. TINER

IPC: H01L51/56 ,  H01L21/68 ,  C23C16/04 ,  C23C16/455 ,  C23C16/458 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01L51/56 ,  C23C14/042 ,  C23C16/042 ,  H01L21/67103 ,  H01L21/6719 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/681 ,  H01L21/682

Abstract: A process chamber for processing a plurality of substrates is provided. The process chamber includes a chamber body having a single substrate transfer opening, a first substrate support mesa disposed in the chamber body, and a second substrate support mesa disposed in the chamber body. Each substrate support mesa is configured to support a substrate during processing. The centers of the first substrate support mesa, the second substrate support mesa, and the opening are linearly aligned.

公开(公告)号：US20140023460A1

公开(公告)日：2014-01-23

申请号：US14035829

申请日：2013-09-24

Applicant: Applied Materials, Inc.

Inventor： Mehran BEHDJAT ,  Shinichi KURITA ,  John M. WHITE ,  Suhail ANWAR ,  Makoto INAGAWA

IPC: H01L21/67 ,  F16K15/14

CPC classification number: H01L21/67126 ,  F16K51/02

Abstract: Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased.

Abstract translation: 本文公开的实施例通常涉及用于密封腔室中的开口的狭缝阀门组件。 当狭缝阀开口收缩时，被压靠在腔室上以密封狭缝阀开口的狭缝阀门随着腔室移动，使得压紧在狭缝阀门和腔室之间的O形环可以与狭缝阀门一起移动，并且 房间。 因此，可能会发生O形环相对于室的摩擦较少。 随着摩擦的减少，可能产生更少的颗粒，并且可以延长O形环的寿命。 随着O形圈的寿命更长，衬底产量可能会增加。

公开(公告)号：US20190193233A1

公开(公告)日：2019-06-27

申请号：US15853548

申请日：2017-12-22

Applicant: Applied Materials, Inc.

Inventor： Ilyoung HONG ,  Lai ZHAO ,  Jianhua ZHOU ,  Robin L. TINER ,  Gaku FURUTA ,  Shinichi KURITA ,  Soo Young CHOI

IPC: B24B19/00 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32

CPC classification number: B24B19/009 ,  B24B1/04 ,  C23C16/4407 ,  C23C16/45559 ,  H01J37/3244

Abstract: Methods for manufacturing a diffuser plate for a PECVD chamber are provided. The methods provide for applying a compliant abrasive medium to round the sharp edges at corners of the output holes on a contoured downstream side of a gas diffuser plate. By rounding the edges of the output holes reduces the flaking of deposited materials on the downstream side of the gas diffuser plate and reduces the amount of undesirable particles generated during the PECVD deposition process.

公开(公告)号：US20180025890A1

公开(公告)日：2018-01-25

申请号：US15719465

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： Soo Young CHOI ,  John M. WHITE ,  Qunhua WANG ,  Li HOU ,  Ki Woon KIM ,  Shinichi KURITA ,  Tae Kyung WON ,  Suhail ANWAR ,  Beom Soo PARK ,  Robin L. TINER

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/509 ,  C23C16/34

CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

Abstract: Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.

公开(公告)号：US20170352562A1

公开(公告)日：2017-12-07

申请号：US15171783

申请日：2016-06-02

Applicant: Applied Materials, Inc.

Inventor： Shinichi KURITA ,  Makoto INAGAWA ,  Hanzheng H. LIN ,  Takayuki MATSUMOTO ,  Suhail ANWAR

IPC: H01L21/67 ,  C23C16/04 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  H01J37/32 ,  H01L21/677 ,  C23C16/30

CPC classification number: H01L21/67167 ,  C23C14/566 ,  C23C16/042 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32816 ,  H01J37/32899 ,  H01J37/32908 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3326 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/68742

Abstract: A transfer chamber for a processing system suitable for processing a plurality of substrates and a method of using the same is provided. The transfer chamber includes a lid, a bottom disposed opposite the lid, a plurality of sidewalls sealingly coupling the lid to the bottom and defining an internal volume, wherein the plurality of sidewalls form the faces of a dodecagon. An opening is formed in each of the faces, wherein the opening is configured for a substrate to pass therethrough. A transfer robot is disposed in the internal volume, wherein the transfer robot has effectors configured to support the substrate through one opening to another opening.

公开(公告)号：US20170335459A1

公开(公告)日：2017-11-23

申请号：US15157076

申请日：2016-05-17

Applicant: Applied Materials, Inc.

Inventor： Young-jin CHOI ,  Beom Soo PARK ,  Dongsuh LEE ,  William Norman STERLING ,  Robin L. TINER ,  Shinichi KURITA ,  Suhail ANWAR ,  Soo Young CHOI ,  Yi CUI ,  Lia ZHAO ,  Dapeng WANG

IPC: C23C16/50 ,  C23C16/40 ,  C23C16/458 ,  H01L21/687 ,  H01L21/285 ,  H01L21/02

CPC classification number: C23C16/50 ,  C23C16/402 ,  C23C16/4581 ,  C23C16/4583 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785

Abstract: Embodiments described herein generally relate to a substrate support assembly. The substrate support assembly includes a support plate and a ceramic layer. The support plate has a top surface. The top surface includes a substrate receiving area configured to support a large area substrate and an outer area located outward of the substrate receiving area.

公开(公告)号：US20170231033A1

公开(公告)日：2017-08-10

申请号：US15496405

申请日：2017-04-25

Applicant: Applied Materials, Inc.

Inventor： Robin L. TINER ,  Soo Young CHOI ,  Beom Soo PARK ,  Shinichi KURITA ,  Bora OH ,  Gaku FURUTA

IPC: H05B3/22 ,  C23C16/458 ,  H01L21/67 ,  C23C16/50

CPC classification number: H05B3/22 ,  C23C16/458 ,  C23C16/4586 ,  C23C16/50 ,  H01L21/67103 ,  H05B2203/003

Abstract: The present invention generally relates to a substrate support for use in a processing chamber. The substrate support has a rectangular body. The rectangular body has a first quadrant, a second quadrant, a third quadrant and a fourth quadrant. A first heating element is disposed in the first quadrant and extending from a center area of the rectangular body. The first heating element has a first segment having a first length and extending from the center area, a second segment having a second length, the second segment extending from the first segment and coupled thereto, a third segment having a third length extending from the second segment and coupled thereto, and a fourth segment having a fourth length coupled to and extending from the third segment to the center area. A second heating element is enclosed by the first heating element and the center area.