Device to control uniformity of extracted ion beam

    公开(公告)号:US12154753B2

    公开(公告)日:2024-11-26

    申请号:US17473101

    申请日:2021-09-13

    Abstract: An ion source capable of extracting a ribbon ion beam with improved uniformity is disclosed. One of the walls of the ion source has a protrusion on its interior surface facing the chamber. The protrusion creates a loss area that serves as a sink for free electrons and ions. This causes a reduction in plasma density near the protrusion, and may improve the uniformity of the ribbon ion beam that is extracted from the ion source by modifying the beam current near the protrusion. The shape of the protrusion may be modified to achieve the desired uniformity. The protrusion may also be utilized with a cylindrical ion source. In certain embodiments, the protrusion is created by a plurality of mechanically adjustable protrusion elements.

    XRAY DIFFRACTION ANGLE VERIFICATION IN AN ION IMPLANTER

    公开(公告)号:US20240222072A1

    公开(公告)日:2024-07-04

    申请号:US18091041

    申请日:2022-12-29

    CPC classification number: H01J37/3171 H01J37/20 H01J37/244

    Abstract: An ion implanter to facilitate channeling of an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter comprises an ion source to generate an ion beam, a platen to support the workpiece having the crystalline structure, an Xray source to generate an Xray beam, wherein at least a portion of the Xray beam impacts the workpiece to produce diffracted Xrays, an Xray detector positioned to receive the diffracted Xrays, and a controller, in communication with the Xray source, the platen, and the Xray detector. The controller contains instructions, which enable the ion implanter to perform a rocking curve test after the workpiece is disposed on the platen and calculate an orientation of the platen for an ion implant process based on a result of the rocking curve test to facilitate channeling of the ion beam into the crystalline structure of the workpiece.

    Mismatched optics for angular control of extracted ion beam

    公开(公告)号:US11651932B1

    公开(公告)日:2023-05-16

    申请号:US17510996

    申请日:2021-10-26

    CPC classification number: H01J37/08 H01J37/05 H01J37/3171

    Abstract: An ion source capable of extracting a ribbon ion beam with improved vertical angular uniformity is disclosed. The extraction plate and extraction optics are designed such that there is at least one non-uniform gap between adjacent components. A non-uniform gap may be effective in reducing angular spread non-uniformity of the extracted ribbon ion beam. Specifically, for a given gap in the Z direction, ions extracted from regions with lower plasma density may have more vertical angular spread. A larger gap in the Z direction between components in this region may make the vertical angular spread closer to the vertical angular spread of ions extracted from regions with higher plasma density. The non-uniform gap may be created by having an extraction plate that is flat or curved and electrodes that are flat, convex or concave. In certain embodiments, the non-uniform gap is located between the extraction plate and the suppression electrode.

    Variable Thickness Ion Source Extraction Plate

    公开(公告)号:US20230080083A1

    公开(公告)日:2023-03-16

    申请号:US17473096

    申请日:2021-09-13

    Abstract: An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.

    Particle yield via beam-line pressure control

    公开(公告)号:US11562885B2

    公开(公告)日:2023-01-24

    申请号:US17351842

    申请日:2021-06-18

    Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.

    Electrostatic filter providing reduced particle generation

    公开(公告)号:US11437215B2

    公开(公告)日:2022-09-06

    申请号:US16714097

    申请日:2019-12-13

    Abstract: Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.

    PARTICLE YIELD VIA BEAM-LINE PRESSURE CONTROL

    公开(公告)号:US20220037114A1

    公开(公告)日:2022-02-03

    申请号:US17351842

    申请日:2021-06-18

    Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.

    Cylindrical shaped arc chamber for indirectly heated cathode ion source

    公开(公告)号:US10818469B2

    公开(公告)日:2020-10-27

    申请号:US16219302

    申请日:2018-12-13

    Abstract: An indirectly heated cathode ion source having a cylindrical housing with two open ends is disclosed. The cathode and repeller are sized to fit within the two open ends. These components may be inserted into the open ends, creating a small radial spacing that provides electrical isolation between the cylindrical housing and the cathode and repeller. In another embodiment, the repeller may be disposed from the end of the cylindrical housing creating a small axial spacing. In another embodiment, insulators are used to hold the cathode and repeller in place. This design results in a reduced distance between the cathode column and the extraction aperture, which may be beneficial to the generation of ion beams of certain species.

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