METHOD, APPARATUS, AND SYSTEM FOR DYNAMICALLY CONTROLLING AN ELECTROSTATIC CHUCK DURING AN INSPECTION OF WAFER

    公开(公告)号:US20230178406A1

    公开(公告)日:2023-06-08

    申请号:US17913149

    申请日:2021-03-18

    Abstract: An electrostatic chuck control system configured to be utilized during an inspection process of a wafer, the electrostatic chuck control system comprising an electrostatic chuck of a stage configured to be undocked during the inspection process, wherein the electrostatic chuck comprises a plurality of components configured to influence an interaction between the wafer and the electrostatic chuck during the inspection process, a first sensor configured to generate measurement data between at least some of the plurality of components and the wafer, and a controller including circuitry configured to receive the measurement data to determine characteristics of the wafer relative to the electrostatic chuck and to generate adjustment data to enable adjusting, while the stage is undocked, at least some of the plurality of components based on the determined characteristics.

    IMAGE CONTRAST ENHANCEMENT IN SAMPLE INSPECTION

    公开(公告)号:US20220122803A1

    公开(公告)日:2022-04-21

    申请号:US17516654

    申请日:2021-11-01

    Abstract: Disclosed herein is a method comprising depositing a first amount of electric charges into a region of a sample, during a first time period; depositing a second amount of electric charges into the region, during a second time period; while scanning a probe spot generated on the sample by a beam of charged particles, recording from the probe spot signals representing interactions of the beam of charged particles and the sample; wherein an average rale of deposition during the first time period, and an average rate of deposition during the second time period are different.

    SYSTEMS AND METHODS FOR ETCHING A SUBSTRATE
    20.
    发明申请

    公开(公告)号:US20200211817A1

    公开(公告)日:2020-07-02

    申请号:US16727706

    申请日:2019-12-26

    Abstract: A method of processing a workpiece may include forming a first layer on a first side of a base layer. The base layer may be part of a substrate including a plurality of layers. The method may also include forming a second layer on the first layer. A material of the second layer may include metal. The method may also include forming an opening in the second layer, forming an opening in the first layer by etching, and removing the second layer. The method may include dry etching of the first layer.

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