SYSTEMS AND METHODS FOR ETCHING A SUBSTRATE
    2.
    发明申请

    公开(公告)号:US20200211817A1

    公开(公告)日:2020-07-02

    申请号:US16727706

    申请日:2019-12-26

    Abstract: A method of processing a workpiece may include forming a first layer on a first side of a base layer. The base layer may be part of a substrate including a plurality of layers. The method may also include forming a second layer on the first layer. A material of the second layer may include metal. The method may also include forming an opening in the second layer, forming an opening in the first layer by etching, and removing the second layer. The method may include dry etching of the first layer.

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