Invention Application
- Patent Title: SYSTEMS AND METHODS FOR ETCHING A SUBSTRATE
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Application No.: US16727706Application Date: 2019-12-26
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Publication No.: US20200211817A1Publication Date: 2020-07-02
- Inventor: Jie FANG , Yixiang WANG , Qirong ZHANG , Haojie ZHANG , Jinmei YANG , Fenghui ZHU
- Applicant: ASML Netherlands B.V.
- Main IPC: H01J37/26
- IPC: H01J37/26 ; C25F3/14

Abstract:
A method of processing a workpiece may include forming a first layer on a first side of a base layer. The base layer may be part of a substrate including a plurality of layers. The method may also include forming a second layer on the first layer. A material of the second layer may include metal. The method may also include forming an opening in the second layer, forming an opening in the first layer by etching, and removing the second layer. The method may include dry etching of the first layer.
Public/Granted literature
- US11581161B2 Systems and methods for etching a substrate Public/Granted day:2023-02-14
Information query