公开(公告)号：US20170253959A1

公开(公告)日：2017-09-07

申请号：US15448996

申请日：2017-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/54

CPC classification number: C23C14/351 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76871 ,  H01L21/76879

Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.

公开(公告)号：US20170117121A1

公开(公告)日：2017-04-27

申请号：US15277674

申请日：2016-09-27

Applicant: Applied Materials, Inc.

Inventor： Martin Lee RIKER ,  Fuhong ZHANG ,  Anthony INFANTE ,  Zheng WANG

IPC: H01J37/34 ,  C23C14/54 ,  C23C14/35

CPC classification number: H01J37/3447 ,  C23C14/046 ,  H01J37/34

Abstract: In some implementations described herein, a collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.

公开(公告)号：US20220020578A1

公开(公告)日：2022-01-20

申请号：US16928606

申请日：2020-07-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Fuhong ZHANG ,  Shirish A. PETHE ,  Martin Lee RIKER ,  Lewis Yuan Tse LO ,  Lanlan ZHONG ,  Xianmin TANG ,  Paul Dennis CONNORS

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/54 ,  C23C14/14 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. A method, for example, includes igniting a plasma at a first pressure within a processing volume of a process chamber; depositing sputter material from a target disposed within the processing volume while decreasing the first pressure to a second pressure within a first time frame while maintaining the plasma; continuing to deposit sputter material from the target while decreasing the second pressure to a third pressure within a second time frame less than the first time frame while maintaining the plasma; and continuing to deposit sputter material from the target while maintaining the third pressure for a third time frame that is greater than or equal to the second time frame while maintaining the plasma.

公开(公告)号：US20220020577A1

公开(公告)日：2022-01-20

申请号：US17490840

申请日：2021-09-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20210395877A1

公开(公告)日：2021-12-23

申请号：US16908344

申请日：2020-06-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Kirankumar Neelasandra SAVANDAIAH ,  Keith A. MILLER ,  Srinivasa Rao YEDLA ,  Chandrashekar KENCHAPPA ,  Martin Lee RIKER

IPC: C23C14/34

Abstract: Embodiments of process kits for use in plasma process chambers are provided herein. In some embodiments, a process kit for use in a process chamber includes an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the annular body includes an inner surface having a first segment that extends downward, a second segment that extends radially outward from the first segment, a third segment that extends downward from the second segment, a fourth segment that extends radially outward from the third segment, a fifth segment that extends downward from the fourth segment, a sixth segment that extends radially inward from the fifth segment, a seventh segment that extends downward from the sixth segment, and an eighth segment that extends radially inward from the seventh segment.

公开(公告)号：US20210071294A1

公开(公告)日：2021-03-11

申请号：US17101933

申请日：2020-11-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: C23C14/35 ,  C23C14/54 ,  H01J37/34

Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.

公开(公告)号：US20180218889A1

公开(公告)日：2018-08-02

申请号：US15940398

申请日：2018-03-29

Applicant: Applied Materials, Inc.

Inventor： Martin Lee RIKER ,  Fuhong ZHANG ,  Anthony INFANTE ,  Zheng WANG

IPC: H01J37/34 ,  C23C14/04

CPC classification number: H01J37/3447 ,  C23C14/046 ,  H01J37/32403 ,  H01J37/32477 ,  H01J37/34 ,  H01J37/347

Abstract: In some implementations described herein, a collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.

公开(公告)号：US20180025895A1

公开(公告)日：2018-01-25

申请号：US15290150

申请日：2016-10-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Martin Lee RIKER ,  Keith A. MILLER ,  Shreekant GAYAKA ,  Carl R. JOHNSON

IPC: H01J37/34 ,  C23C14/35 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/285 ,  H01J37/32 ,  C23C14/54

CPC classification number: H01J37/3476 ,  C23C14/35 ,  C23C14/541 ,  C23C14/542 ,  C23C14/5806 ,  H01J37/32027 ,  H01J37/32082 ,  H01J37/3266 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/3455 ,  H01J2237/334 ,  H01L21/2855 ,  H01L21/3065 ,  H01L22/26

Abstract: A method, apparatus and system for controlling the processing of a substrate within a process chamber are described herein. In some embodiments, a method of controlling a substrate process within a process chamber includes determining a position of a moveable magnetron in the process chamber relative to a reference location on a surface of the substrate and modulating a power parameter of at least one power supply affecting substrate processing based on the determined position of the magnetron to control, for example, at least one of a deposition rate or an etching rate of the substrate processing. In one embodiment, the modulated power parameter is a power set point of at least one of a direct current (DC) source power, a radio frequency (RF) bias power, a DC shield bias voltage, or an electromagnetic coil current of the at least one power supply.