公开(公告)号：US20230115004A1

公开(公告)日：2023-04-13

申请号：US18081499

申请日：2022-12-14

Applicant: Applied Materials, Inc.

Inventor： Tejinder SINGH ,  Lifan YAN ,  Abhijit B. MALLICK ,  Daniel Lee DIEHL ,  Ho-yung HWANG ,  Jothilingam RAMALINGAM

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/308 ,  H01L21/033

Abstract: Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.

公开(公告)号：US20210033974A1

公开(公告)日：2021-02-04

申请号：US16890867

申请日：2020-06-02

Applicant: Applied Materials, Inc.

Inventor： Tejinder SINGH ,  Lifan YAN ,  Abhijit B. MALLICK ,  Daniel Lee DIEHL ,  Ho-yung HWANG ,  Jothilingam RAMALINGAM

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/308

Abstract: Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.

公开(公告)号：US20180142343A1

公开(公告)日：2018-05-24

申请号：US15814497

申请日：2017-11-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin ZENG ,  Yong CAO ,  Daniel Lee DIEHL ,  Huixiong DAI ,  Khoi PHAN ,  Christopher NGAI ,  Rongjun WANG ,  Xianmin TANG

IPC: C23C14/35 ,  C23C14/22 ,  C23C14/14 ,  C23C14/54

CPC classification number: C23C14/35 ,  C23C14/0057 ,  C23C14/042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/228 ,  C23C14/54 ,  H01J37/34 ,  H01J2237/332

Abstract: In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.

公开(公告)号：US20160049305A1

公开(公告)日：2016-02-18

申请号：US14799374

申请日：2015-07-14

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Bok Hoen KIM ,  Deenesh PADHI ,  Li Yan MIAO ,  Pramit MANNA ,  Christopher Dennis BENCHER ,  Mehul B. NAIK ,  Huixiong DAI ,  Christopher S. NGAI ,  Daniel Lee DIEHL

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L21/3088 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144

Abstract: Embodiments of the disclosure generally provide a method of forming a reduced dimension pattern in a hardmask that is optically matched to an overlying photoresist layer. The method generally comprises of application of a dimension shrinking conformal carbon layer over the field region, sidewalls, and bottom portion of the patterned photoresist and the underlying hardmask at temperatures below the decomposition temperature of the photoresist. The methods and embodiments herein further involve removal of the conformal carbon layer from the bottom portion of the patterned photoresist and the hardmask by an etch process to expose the hardmask, etching the exposed hardmask substrate at the bottom portion, followed by the simultaneous removal of the conformal carbon layer, the photoresist, and other carbonaceous components. A hardmask with reduced dimension features for further pattern transfer is thus yielded.

Abstract translation: 本公开的实施例通常提供在与上覆光致抗蚀剂层光学匹配的硬掩模中形成减小尺寸图案的方法。 该方法通常包括在低于光致抗蚀剂的分解温度的温度下，在图案化的光致抗蚀剂和下面的硬掩模的场区域，侧壁和底部上施加尺寸收缩的保形碳层。 本文的方法和实施例还涉及通过蚀刻工艺从图案化的光致抗蚀剂和硬掩模的底部部分去除保形碳层，以暴露硬掩模，在底部蚀刻暴露的硬掩模基板，随后同时去除 保形碳层，光致抗蚀剂等碳质成分。 因此产生了用于进一步模式转移的尺寸减小特征的硬掩模。