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11.
公开(公告)号:US20070273031A1
公开(公告)日:2007-11-29
申请号:US11707827
申请日:2007-02-16
申请人: Jin-Yuan Lee , Ying-Chih Chen
发明人: Jin-Yuan Lee , Ying-Chih Chen
IPC分类号: H01L23/52
CPC分类号: H01L24/48 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05171 , H01L2224/05187 , H01L2224/05548 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/05644 , H01L2224/45144 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48599 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/854 , H01L2224/85424 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/04953 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要: A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure.
摘要翻译: 提供了一种方法和结构,以在集成电路管芯上形成的有源和/或无源器件和/或低k电介质上实现引线接合连接。 提供了具有有源和/或无源器件的半导体衬底,其中在有源和/或无源器件上形成互连金属化。 提供了形成在互连金属化之上的钝化层,其中在钝化层中形成开口以形成互连金属化的上金属层。 柔性金属焊盘形成在钝化层上方,其中柔性金属接合焊盘通过开口连接到上金属层,并且其中柔性金属接合焊盘基本上形成在有源和/或无源器件的上方。 顺应性金属接合焊盘可以由复合金属结构形成。
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公开(公告)号:US07295725B1
公开(公告)日:2007-11-13
申请号:US11706879
申请日:2007-02-13
申请人: Cherng-Shiun Wu , Hsien-Huan Chiu , Shin-Ge Lee , Ying-Chih Chen
发明人: Cherng-Shiun Wu , Hsien-Huan Chiu , Shin-Ge Lee , Ying-Chih Chen
CPC分类号: G02B6/4214 , G02B6/12 , G02B6/13 , H05K1/0274 , H05K3/4641 , H05K2203/061
摘要: An electro-optical circuit board is provided, which includes an electrical wiring board and an optical wiring board. The optical wiring board includes a first metal substrate, an optical guiding layer formed on the first metal substrate, and a metal supporting structure formed around the optical guiding layer, wherein the optical guiding layer includes an optical waveguide and a clad wrapping the optical waveguide. When the electrical wiring board is joined with the optical wiring board through a laminating process, the metal supporting structure absorbs the pressure applied to the electro-optical circuit board.
摘要翻译: 提供一种电光电路板,其包括电布线板和光布线板。 光配线板包括第一金属基板,形成在第一金属基板上的光引导层和形成在光导层周围的金属支撑结构,其中,光导层包括光波导和包围光波导的包层。 当电接线板通过层压工艺与光布线板接合时,金属支撑结构吸收施加到电光电路板的压力。
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公开(公告)号:US20070164453A1
公开(公告)日:2007-07-19
申请号:US11678599
申请日:2007-02-25
申请人: Jin-Yuan Lee , Ying-Chih Chen , Mou-Shiung Lin
发明人: Jin-Yuan Lee , Ying-Chih Chen , Mou-Shiung Lin
IPC分类号: H01L23/48
CPC分类号: H01L24/48 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05171 , H01L2224/05187 , H01L2224/05548 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/05644 , H01L2224/45144 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48599 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/854 , H01L2224/85424 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/04953 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要: A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure.
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14.
公开(公告)号:US20070164452A1
公开(公告)日:2007-07-19
申请号:US11678598
申请日:2007-02-25
申请人: Jin-Yuan Lee , Ying-Chih Chen , Mou-Shiung Lin
发明人: Jin-Yuan Lee , Ying-Chih Chen , Mou-Shiung Lin
IPC分类号: H01L23/48
CPC分类号: H01L24/48 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05171 , H01L2224/05187 , H01L2224/05548 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/05644 , H01L2224/45144 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48599 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/854 , H01L2224/85424 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/04953 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要: A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure.
摘要翻译: 提供了一种方法和结构,以在集成电路管芯上形成的有源和/或无源器件和/或低k电介质上实现引线接合连接。 提供了具有有源和/或无源器件的半导体衬底,其中在有源和/或无源器件上形成互连金属化。 提供了形成在互连金属化之上的钝化层,其中在钝化层中形成开口以形成互连金属化的上金属层。 柔性金属焊盘形成在钝化层上方,其中柔性金属接合焊盘通过开口连接到上金属层,并且其中柔性金属接合焊盘基本上形成在有源和/或无源器件的上方。 顺应性金属接合焊盘可以由复合金属结构形成。
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公开(公告)号:US20070164441A1
公开(公告)日:2007-07-19
申请号:US11678600
申请日:2007-02-25
申请人: Jin-Yuan Lee , Ying-Chih Chen , Mou-Shiung Lin
发明人: Jin-Yuan Lee , Ying-Chih Chen , Mou-Shiung Lin
IPC分类号: H01L23/48
CPC分类号: H01L24/48 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05171 , H01L2224/05187 , H01L2224/05548 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/05644 , H01L2224/45144 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48599 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/854 , H01L2224/85424 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/04953 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要: A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure.
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公开(公告)号:US20050250255A1
公开(公告)日:2005-11-10
申请号:US11183658
申请日:2005-07-18
申请人: Ying-Chih Chen
发明人: Ying-Chih Chen
IPC分类号: H01L21/00 , H01L21/312 , H01L23/29 , H01L23/31 , H01L23/525
CPC分类号: H01L21/02118 , H01L21/02337 , H01L21/312 , H01L23/293 , H01L23/3114 , H01L23/525 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要: A method for forming a semiconductor chip or wafer includes following steps. A semiconductor substrate is provided, and then a polymer layer is deposited over the semiconductor substrate, wherein the polymer layer comprises polyimide. The polymer layer with a temperature profile having a peak temperature between 200 and 320 degrees Celsius. Alternatively, the temperature profile may comprises a period of time with a temperature higher than 320 degree Celsius, wherein the period of time is shorter than 45 minutes.
摘要翻译: 用于形成半导体芯片或晶片的方法包括以下步骤。 提供半导体衬底,然后在半导体衬底上沉积聚合物层,其中聚合物层包括聚酰亚胺。 具有温度分布的聚合物层具有在200和320摄氏度之间的峰值温度。 或者,温度分布可以包括温度高于320摄氏度的时间段,其中时间段短于45分钟。
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公开(公告)号:US06739022B1
公开(公告)日:2004-05-25
申请号:US10292760
申请日:2002-11-13
申请人: Ying-Chih Chen
发明人: Ying-Chih Chen
IPC分类号: F16B4504
CPC分类号: F16B45/04 , F16B21/00 , F16G15/08 , F16G17/00 , Y10T24/45272 , Y10T24/45288 , Y10T24/45382 , Y10T24/4755
摘要: The present invention relates to a rotary buckle structure which includes a buckle member and a rotary member. The bottom of the buckle member and rotary member are respectively coupled by way of a downwardly tapered conical body, and conical hole, and which have the same concentric axis. A length of surface of external circumference is longer than the length of the inner circumference of the conical hole. This arrangement improves the traditional buckle and effectively reduces the wearing to prevent the entire buckle set from loosening or falling off, and thus extends the life of use.
摘要翻译: 旋转带扣结构技术领域本发明涉及一种旋转带扣结构,其包括带扣构件和旋转构件。 带扣构件和旋转构件的底部分别通过向下锥形的锥形体和锥形孔联接,并且具有相同的同心轴线。 外周长的表面长度大于圆锥孔内周长。 这种布置改善了传统的扣环,有效地减少了磨损,防止整个扣环松动或脱落,从而延长了使用寿命。
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公开(公告)号:US09153555B2
公开(公告)日:2015-10-06
申请号:US11678599
申请日:2007-02-25
申请人: Jin-Yuan Lee , Ying-Chih Chen , Mou-Shiung Lin
发明人: Jin-Yuan Lee , Ying-Chih Chen , Mou-Shiung Lin
IPC分类号: H01L23/528 , H01L23/532 , H01L23/00
CPC分类号: H01L24/48 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05171 , H01L2224/05187 , H01L2224/05548 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/05644 , H01L2224/45144 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48599 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/854 , H01L2224/85424 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/04953 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要: A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure.
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19.
公开(公告)号:US08026588B2
公开(公告)日:2011-09-27
申请号:US11707827
申请日:2007-02-16
申请人: Jin-Yuan Lee , Ying-Chih Chen , Mou-Shiung Lin
发明人: Jin-Yuan Lee , Ying-Chih Chen , Mou-Shiung Lin
IPC分类号: H01L21/60
CPC分类号: H01L24/48 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05171 , H01L2224/05187 , H01L2224/05548 , H01L2224/05556 , H01L2224/05558 , H01L2224/05624 , H01L2224/05644 , H01L2224/45144 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48599 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/854 , H01L2224/85424 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/04953 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要: A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure.
摘要翻译: 提供了一种方法和结构,以在集成电路管芯上形成的有源和/或无源器件和/或低k电介质上实现引线接合连接。 提供了具有有源和/或无源器件的半导体衬底,其中在有源和/或无源器件上形成互连金属化。 提供了形成在互连金属化之上的钝化层,其中在钝化层中形成开口以形成互连金属化的上金属层。 柔性金属焊盘形成在钝化层上方,其中柔性金属接合焊盘通过开口连接到上金属层,并且其中柔性金属接合焊盘基本上形成在有源和/或无源器件的上方。 顺应性金属接合焊盘可以由复合金属结构形成。
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公开(公告)号:US07973401B2
公开(公告)日:2011-07-05
申请号:US12269045
申请日:2008-11-12
CPC分类号: H01L25/0657 , H01L23/3128 , H01L23/525 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/06135 , H01L2224/06136 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48227 , H01L2224/4824 , H01L2224/49 , H01L2224/73215 , H01L2224/73265 , H01L2224/92147 , H01L2224/92247 , H01L2225/0651 , H01L2225/06558 , H01L2924/01079 , H01L2924/09701 , H01L2924/12044 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要: A chip package comprises a first chip having a first side and a second side, wherein said first chip comprises a first pad, a first trace, a second pad and a first passivation layer at said first side thereof, an opening in said first passivation layer exposing said first pad, said first trace being over said first passivation layer, said first trace connecting said first pad to said second pad; a second chip having a first side and a second side, wherein said second chip comprises a first pad at said first side thereof, wherein said second side of said second chip is joined with said second side of side first chip; a substrate joined with said first side of said first chip or with said first side of said second chip; a first wirebonding wire connecting said second pad of said first chip and said substrate; and a second wirebonding wire connecting said first pad of said second chip and said substrate.
摘要翻译: 芯片封装包括具有第一侧和第二侧的第一芯片,其中所述第一芯片包括第一焊盘,第一焊盘,第二焊盘和在其第一侧的第一钝化层,所述第一钝化层中的开口 暴露所述第一焊盘,所述第一迹线在所述第一钝化层之上,所述第一迹线将所述第一焊盘连接到所述第二焊盘; 具有第一侧和第二侧的第二芯片,其中所述第二芯片包括在其第一侧的第一焊盘,其中所述第二芯片的所述第二侧与所述第二芯片的所述第二侧接合; 与所述第一芯片的所述第一侧或所述第二芯片的所述第一侧连接的衬底; 连接所述第一芯片的所述第二焊盘和所述衬底的第一引线接合线; 以及连接所述第二芯片的所述第一焊盘和所述衬底的第二引线键合线。
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