摘要:
A lithographic method of manufacturing a miniaturized device using a projection exposure system involves illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.
摘要:
Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.
摘要:
In general, in one aspect, the invention features a system that includes a catoptric projection objective having an optical axis and including a plurality of projection objective elements positioned between an object plane and an image plane, the object and image planes being orthogonal to the optical axis, the projection objective being configured so that during operation the projection objective directs radiation reflected at the object plane to the image plane to form an image at the image plane of an object positioned in a field at the object plane, the field having a first dimension of 8 mm or more and a second dimension of 8 mm or more, the first and second dimensions being along orthogonal directions. The system also includes an illumination system including a plurality of illumination system elements, the illumination system being configured so that during operation the illumination system directs the radiation to the field at the object plane, where a chief ray of the radiation has an angle of incidence of 10° or less at the object plane.
摘要:
The disclosure relates to an optical projection arrangement that can be used to image a reticle onto a substrate. The projection arrangement includes reflective elements, by which a ray path is defined. A combination stop is in a pupil of the ray path. The combination stop has a first opening (aperture opening) for use as an aperture stop. The combination stop also has a second opening for allowing passage of a ray bundle of the ray path, such that the combination stop acts as a combined aperture stop and stray light stop. In addition, the disclosure relates to a corresponding combination stop for optical arrangements, as well as related systems, components and methods.
摘要:
The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and components.
摘要:
A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method consists in includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution.
摘要:
A projection objective of a microlithographic projection exposure apparatus (110) is designed for immersion operation in which an immersion liquid (134) adjoins a photosensitive layer (126). The refractive index of the immersion liquid is greater than the refractive index of a medium (L5; 142; L205; LL7; LL8; LL9). that adjoins the immersion liquid on the object side of the projection objective (120; 120′; 120″). The projection objective is designed such that the immersion liquid (134) is convexly curved towards the object plane (122) during immersion operation.
摘要:
A method of determining materials of lenses contained in an optical system of a projection exposure apparatus is described. First, for each lens of a plurality of the lenses, a susceptibility factor KLT/LH is determined. This factor is a measure of the susceptibility of the respective lens to deteriorations caused by at least one of lifetime effects and lens heating effects. Then a birefringent fluoride crystal is selected as a material for each lens for which the susceptibility factor KLT/LH is above a predetermined threshold. Theses lenses are assigned to a first set of lenses. For these lenses, measures are determined for reducing adverse effects caused by birefringence inherent to the fluoride crystals.
摘要:
An objective in a microlithographic projection exposure apparatus has a first optical element that has polarization dependent properties causing intensity fluctuations in an image plane of the objective. These fluctuations may be produced by a second optical element that is arranged downstream of the first optical element. A gray filter disposed in the beam path reduces the intensity fluctuations.
摘要:
An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.