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公开(公告)号：US08325426B2
公开(公告)日：2012-12-04
申请号：US13156819
申请日：2011-06-09
申请人： Karl-Heinz Schuster , Heiko Feldmann , Toralf Gruner , Michael Totzeck , Wilfried Clauss , Susanne Beder , Daniel Kraehmer , Olaf Dittmann
发明人： Karl-Heinz Schuster , Heiko Feldmann , Toralf Gruner , Michael Totzeck , Wilfried Clauss , Susanne Beder , Daniel Kraehmer , Olaf Dittmann
IPC分类号： G02B15/14
CPC分类号： G03F7/70341 , G02B5/3091 , G02B27/0025 , G03F7/70308
摘要： A projection objective of a microlithographic projection exposure apparatus has a high index refractive optical element with an index of refraction greater than 1.6. This element has a volume and a material related optical property which varies over the volume. Variations of this optical property cause an aberration of the objective. In one embodiment at least 4 optical surfaces are provided that are arranged in at least one volume which is optically conjugate with the volume of the refractive optical element. Each optical surface comprises at least one correction means, for example a surface deformation or a birefringent layer with locally varying properties, which at least partially corrects the aberration caused by the variation of the optical property.
摘要翻译： 微光刻投影曝光装置的投影物镜具有折射率大于1.6的高折射率折射光学元件。 该元件具有在体积上变化的体积和材料相关的光学性质。 该光学特性的变化导致物镜的像差。 在一个实施例中，提供至少4个光学表面，其布置在与折射光学元件的体积光学共轭的至少一个体积中。 每个光学表面包括至少一个校正装置，例如具有局部变化特性的表面变形或双折射层，其至少部分地校正由光学性质的变化引起的像差。
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公开(公告)号：US20110235013A1
公开(公告)日：2011-09-29
申请号：US13156819
申请日：2011-06-09
申请人： Karl-Heinz Schuster , Heiko Feldmann , Toralf Gruner , Michael Totzeck , Wilfried Clauss , Susanne Beder , Daniel Kraehmer , Olaf Dittmann
发明人： Karl-Heinz Schuster , Heiko Feldmann , Toralf Gruner , Michael Totzeck , Wilfried Clauss , Susanne Beder , Daniel Kraehmer , Olaf Dittmann
CPC分类号： G03F7/70341 , G02B5/3091 , G02B27/0025 , G03F7/70308
摘要： A projection objective of a microlithographic projection exposure apparatus has a high index refractive optical element with an index of refraction greater than 1.6. This element has a volume and a material related optical property which varies over the volume. Variations of this optical property cause an aberration of the objective. In one embodiment at least 4 optical surfaces are provided that are arranged in at least one volume which is optically conjugate with the volume of the refractive optical element. Each optical surface comprises at least one correction means, for example a surface deformation or a birefringent layer with locally varying properties, which at least partially corrects the aberration caused by the variation of the optical property.
摘要翻译： 微光刻投影曝光装置的投影物镜具有折射率大于1.6的高折射率折射光学元件。 该元件具有在体积上变化的体积和材料相关的光学性质。 该光学特性的变化导致物镜的像差。 在一个实施例中，提供至少4个光学表面，其布置在与折射光学元件的体积光学共轭的至少一个体积中。 每个光学表面包括至少一个校正装置，例如具有局部变化特性的表面变形或双折射层，其至少部分地校正由光学性质的变化引起的像差。
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公开(公告)号：US07982969B2
公开(公告)日：2011-07-19
申请号：US12330980
申请日：2008-12-09
申请人： Karl-Heinz Schuster , Heiko Feldmann , Toralf Gruner , Michael Totzeck , Wilfried Clauss , Susanne Beder , Daniel Kraehmer , Olaf Dittmann
发明人： Karl-Heinz Schuster , Heiko Feldmann , Toralf Gruner , Michael Totzeck , Wilfried Clauss , Susanne Beder , Daniel Kraehmer , Olaf Dittmann
IPC分类号： G02B15/14
CPC分类号： G03F7/70341 , G02B5/3091 , G02B27/0025 , G03F7/70308
摘要： A projection objective of a microlithographic projection exposure apparatus has a high index refractive optical element with an index of refraction greater than 1.6. This element has a volume and a material related optical property which varies over the volume. Variations of this optical property cause an aberration of the objective. In one embodiment at least 4 optical surfaces are provided that are arranged in at least one volume which is optically conjugate with the volume of the refractive optical element. Each optical surface comprises at least one correction means, for example a surface deformation or a birefringent layer with locally varying properties, which at least partially corrects the aberration caused by the variation of the optical property.
摘要翻译： 微光刻投影曝光装置的投影物镜具有折射率大于1.6的高折射率折射光学元件。 该元件具有在体积上变化的体积和材料相关的光学性质。 该光学特性的变化导致物镜的像差。 在一个实施例中，提供至少4个光学表面，其布置在与折射光学元件的体积光学共轭的至少一个体积中。 每个光学表面包括至少一个校正装置，例如具有局部变化特性的表面变形或双折射层，其至少部分地校正由光学性质的变化引起的像差。
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公开(公告)号：US08928859B2
公开(公告)日：2015-01-06
申请号：US13564419
申请日：2012-08-01
申请人： Damian Fiolka , Manfred Maul , Markus Schwab , Wolfgang Seitz , Olaf Dittmann
发明人： Damian Fiolka , Manfred Maul , Markus Schwab , Wolfgang Seitz , Olaf Dittmann
CPC分类号： G03F7/70191 , G02B3/0056 , G02B5/1876 , G02B27/283 , G02B27/285 , G02B27/286 , G03F7/70566
摘要： The disclosure relates to an illumination system of a microlithographic projection exposure apparatus. The illumination system can include a depolarizer which in conjunction with a light mixing system disposed downstream in the light propagation direction at least partially causes effective depolarization of polarized light impinging on the depolarizer. The illumination system can also include a microlens array which is arranged upstream of the light mixing system in the light propagation direction. The microlens array can include a plurality of microlenses arranged with a periodicity. The depolarizer can be configured so that a contribution afforded by interaction of the depolarizer with the periodicity of the microlens array to a residual polarization distribution occurring in a pupil plane arranged downstream of the microlens array in the light propagation direction has a maximum degree of polarization of not more than 5%.
摘要翻译： 本公开涉及一种微光刻投影曝光装置的照明系统。 照明系统可以包括消偏振器，其与在光传播方向上设置的下游的光混合系统相结合，至少部分地引起偏振光对去偏振器的有效去极化。 照明系统还可以包括在光传播方向上布置在光混合系统的上游的微透镜阵列。 微透镜阵列可以包括以周期布置的多个微透镜。 去极化器可以被配置为使得通过去偏振器的相互作用提供的贡献与微透镜阵列的周期性对在光传播方向上布置在微透镜阵列下游的光瞳面中发生的残留极化分布产生的贡献具有最大极化度 不超过5％。
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5.发明授权Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system 有权投影曝光系统，借助于这种投影曝光系统和适于在这种系统中使用的偏振光学元件制造微结构结构构件的方法公开(公告)号：US08854606B2
公开(公告)日：2014-10-07
申请号：US13161011
申请日：2011-06-15
CPC分类号： G03F7/70566 , G03F7/70058
摘要： The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.
摘要翻译： 本发明涉及一种投影曝光系统，特别涉及微光刻技术。 根据本发明的投影曝光系统包括用于在EUV区域中产生光的光源。 投影曝光系统还包括用于通过光源的光照射掩模的第一光学系统和用于使部件上的掩模成像的第二光学系统。 至少一个偏振光学元件设置在光源和部件之间的光束路径上。
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公开(公告)号：US20120293786A1
公开(公告)日：2012-11-22
申请号：US13564419
申请日：2012-08-01
申请人： Damian Fiolka , Manfred Maul , Markus Schwab , Wolfgang Seitz , Olaf Dittmann
发明人： Damian Fiolka , Manfred Maul , Markus Schwab , Wolfgang Seitz , Olaf Dittmann
CPC分类号： G03F7/70191 , G02B3/0056 , G02B5/1876 , G02B27/283 , G02B27/285 , G02B27/286 , G03F7/70566
摘要： The disclosure relates to an illumination system of a microlithographic projection exposure apparatus. The illumination system can include a depolariser which in conjunction with a light mixing system disposed downstream in the light propagation direction at least partially causes effective depolarisation of polarised light impinging on the depolariser. The illumination system can also include a microlens array which is arranged upstream of the light mixing system in the light propagation direction. The microlens array can include a plurality of microlenses arranged with a periodicity. The depolariser can be configured so that a contribution afforded by interaction of the depolariser with the periodicity of the microlens array to a residual polarisation distribution occurring in a pupil plane arranged downstream of the microlens array in the light propagation direction has a maximum degree of polarisation of not more than 5%.
摘要翻译： 本公开涉及一种微光刻投影曝光装置的照明系统。 照明系统可以包括去极化器，其与在光传播方向上设置的下游的光混合系统相结合，至少部分地导致撞击在去极化器上的偏振光的有效去极化。 照明系统还可以包括在光传播方向上布置在光混合系统的上游的微透镜阵列。 微透镜阵列可以包括以周期布置的多个微透镜。 去极化器可以被配置为使得通过去极化器的相互作用提供的贡献与微透镜阵列的周期性对在光传播方向上布置在微透镜阵列的下游的光瞳面中发生的残留极化分布产生的贡献具有最大的偏振度 不超过5％。
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7.发明申请PROJECTION EXPOSURE SYSTEM, METHOD FOR MANUFACTURING A MICRO-STRUCTURED STRUCTURAL MEMBER BY THE AID OF SUCH A PROJECTION EXPOSURE SYSTEM AND POLARIZATION-OPTICAL ELEMENT ADAPTED FOR USE IN SUCH A SYSTEM 有权投影曝光系统，通过这种投影曝光系统的辅助制造微结构结构构件的方法和适用于这种系统的偏光光学元件公开(公告)号：US20110242517A1
公开(公告)日：2011-10-06
申请号：US13161011
申请日：2011-06-15
CPC分类号： G03F7/70566 , G03F7/70058
摘要： The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.
摘要翻译： 本发明涉及一种投影曝光系统，特别涉及微光刻技术。 根据本发明的投影曝光系统包括用于在EUV区域中产生光的光源。 投影曝光系统还包括用于通过光源的光照射掩模的第一光学系统和用于使部件上的掩模成像的第二光学系统。 至少一个偏振光学元件设置在光源和部件之间的光束路径上。
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8.发明授权Method for determining intensity distribution in the image plane of a projection exposure arrangement 有权用于确定投影曝光装置的图像平面中的强度分布的方法公开(公告)号：US07961297B2
公开(公告)日：2011-06-14
申请号：US12065451
申请日：2006-09-02
申请人： Joern Greif-Wuestenbecker , Beate Boehme , Ulrich Stroessner , Michael Totzeck , Vladimir Kamenov , Olaf Dittmann , Daniel Kraehmer , Toralf Gruner , Bernd Geh
发明人： Joern Greif-Wuestenbecker , Beate Boehme , Ulrich Stroessner , Michael Totzeck , Vladimir Kamenov , Olaf Dittmann , Daniel Kraehmer , Toralf Gruner , Bernd Geh
CPC分类号： G03F7/70666 , G03F7/70308
摘要： A method for determining intensity distribution in the focal plane of a projection exposure arrangement, in which a large aperture imaging system is emulated and a light from a sample is represented on a local resolution detector by an emulation imaging system. A device for carrying out the method and emulated devices are also described. The invention makes it possible to improve a reproduction quality since the system apodisation is taken into consideration. The inventive method includes determining the integrated amplitude distribution in an output pupil, combining the integrated amplitude distribution with a predetermined apodization correction and calculating a corrected apodization image according to the modified amplitude distribution.
摘要翻译： 一种用于确定投影曝光装置的焦平面中的强度分布的方法，其中大面积成像系统被仿真并且来自样品的光由仿真成像系统在局部分辨率检测器上表示。 还描述了用于执行该方法和仿真装置的装置。 由于考虑到系统变迹，本发明使得可以提高再现质量。 本发明的方法包括确定输出光瞳中的积分幅度分布，将积分幅度分布与预定的变迹校正相结合，并根据修改的振幅分布计算校正的变迹图像。
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公开(公告)号：US07808615B2
公开(公告)日：2010-10-05
申请号：US11427183
申请日：2006-06-28
申请人： Toralf Gruner , Olaf Conradi , Nils Dieckmann , Markus Schwab , Olaf Dittmann , Michael Totzeck , Daniel Kraehmer , Vladimir Kamenov
发明人： Toralf Gruner , Olaf Conradi , Nils Dieckmann , Markus Schwab , Olaf Dittmann , Michael Totzeck , Daniel Kraehmer , Vladimir Kamenov
CPC分类号： G03F7/70958 , G02B13/143 , G02B17/0856 , G02B17/0892 , G02B27/0012 , G03F7/70091
摘要： The invention concerns a method for operating a projection exposure apparatus to project the image of a structure of an object (5) arranged in an object plane (6) onto a substrate (10) arranged in an image plane (8). The object (5) is illuminated with light of an operating wavelength of the projection exposure apparatus according to one of several adjustable exposure modes. The light produces changes in at least one optical element (9) of the projection exposure apparatus, by which the optical properties of the projection exposure apparatus are influenced. The operation of the projection exposure apparatus makes allowance for the influencing of the optical properties of the projection exposure apparatus or a quantity dependent on the former, being calculated approximately on the basis of the exposure mode used and the structure of the object (5).
摘要翻译： 本发明涉及一种用于操作投影曝光装置以将布置在物平面（6）中的物体（5）的结构的图像投影到布置在图像平面（8）中的基板（10）上的方法。 根据多种可调曝光模式之一，物体（5）被投影曝光装置的工作波长的光照射。 该光在投影曝光装置的至少一个光学元件（9）中产生变化，由此影响投影曝光装置的光学特性。 投影曝光装置的操作允许基于所使用的曝光模式和对象（5）的结构大致计算投影曝光装置的光学特性或取决于前者的光学特性的影响。
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公开(公告)号：US08264668B2
公开(公告)日：2012-09-11
申请号：US12496762
申请日：2009-07-02
申请人： Damian Fiolka , Manfred Maul , Markus Schwab , Wolfgang Seitz , Olaf Dittmann
发明人： Damian Fiolka , Manfred Maul , Markus Schwab , Wolfgang Seitz , Olaf Dittmann
IPC分类号： G03B27/72
CPC分类号： G03F7/70191 , G02B3/0056 , G02B5/1876 , G02B27/283 , G02B27/285 , G02B27/286 , G03F7/70566
摘要： The disclosure relates to an illumination system of a microlithographic projection exposure apparatus. The illumination system can include a depolariser which in conjunction with a light mixing system disposed downstream in the light propagation direction at least partially causes effective depolarisation of polarised light impinging on the depolariser. The illumination system can also include a microlens array which is arranged upstream of the light mixing system in the light propagation direction. The microlens array can include a plurality of microlenses arranged with a periodicity. The depolariser can be configured so that a contribution afforded by interaction of the depolariser with the periodicity of the microlens array to a residual polarisation distribution occurring in a pupil plane arranged downstream of the microlens array in the light propagation direction has a maximum degree of polarisation of not more than 5%.
摘要翻译： 本公开涉及一种微光刻投影曝光装置的照明系统。 照明系统可以包括去极化器，其与在光传播方向上设置的下游的光混合系统相结合，至少部分地导致撞击在去极化器上的偏振光的有效去极化。 照明系统还可以包括在光传播方向上布置在光混合系统的上游的微透镜阵列。 微透镜阵列可以包括以周期布置的多个微透镜。 去极化器可以被配置为使得通过去极化器的相互作用提供的贡献与微透镜阵列的周期性对在光传播方向上布置在微透镜阵列的下游的光瞳面中发生的残留极化分布产生的贡献具有最大的偏振度 不超过5％。
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