公开(公告)号：US07695563B2

公开(公告)日：2010-04-13

申请号：US11621040

申请日：2007-01-08

申请人： Xinliang Lu ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

发明人： Xinliang Lu ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

IPC分类号： C30B25/14

CPC分类号： H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

摘要： In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.

摘要翻译： 在一个实施例中，提供了一种用于在处理室内的衬底上沉积钨材料的方法，其包括将衬底暴露于含有钨前体和还原气体的气态混合物，以在钨沉积期间在衬底上沉积钨成核层 处理。 该方法还包括从处理室除去在钨沉积过程中产生的反应副产物，在浸泡过程期间将基底暴露于还原气体以与处理室内的残余钨前体反应，除去在该过程中产生的反应副产物 从处理室浸泡处理，并且在循环沉积工艺期间重复钨沉积工艺和浸泡工艺。 在实施例中，还原气体可以含有乙硼烷或硅烷。

公开(公告)号：US06797340B2

公开(公告)日：2004-09-28

申请号：US10268195

申请日：2002-10-10

申请人： Hongbin Fang ,  Hyung-Suk A. Yoon ,  Ken Kaung Lai ,  Chi Chung Young ,  James Horng ,  Ming XI ,  Michael X. Yang ,  Hua Chung

发明人： Hongbin Fang ,  Hyung-Suk A. Yoon ,  Ken Kaung Lai ,  Chi Chung Young ,  James Horng ,  Ming XI ,  Michael X. Yang ,  Hua Chung

IPC分类号： C23C800

CPC分类号： C23C16/06 ,  C23C16/02 ,  C23C16/0218 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/08 ,  C23C16/16 ,  C23C16/45525

摘要： A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.

公开(公告)号：US07745333B2

公开(公告)日：2010-06-29

申请号：US12179002

申请日：2008-07-24

申请人： Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Avgerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

发明人： Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Avgerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

IPC分类号： H01L21/44

CPC分类号： H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

摘要翻译： 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

公开(公告)号：US07660644B2

公开(公告)日：2010-02-09

申请号：US11423535

申请日：2006-06-12

申请人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

发明人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

IPC分类号： G06F19/00

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

公开(公告)号：US20090156003A1

公开(公告)日：2009-06-18

申请号：US12335976

申请日：2008-12-16

申请人： MING XI ,  Ashok Sinha ,  Moris Kori ,  Alfred W. Mak ,  Xinliang Lu ,  Ken Kaung Lai ,  Karl A. Littau

发明人： MING XI ,  Ashok Sinha ,  Moris Kori ,  Alfred W. Mak ,  Xinliang Lu ,  Ken Kaung Lai ,  Karl A. Littau

IPC分类号： H01L21/285 ,  H01L21/44

CPC分类号： C23C16/0272 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876

摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.

摘要翻译： 在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中 处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层 沉积工艺。 在一个实例中，含钨层和钨体层沉积在相同的处理室内。

公开(公告)号：US20080317954A1

公开(公告)日：2008-12-25

申请号：US11621040

申请日：2007-01-08

申请人： XINLIANG LU ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

发明人： XINLIANG LU ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

IPC分类号： C23C16/08

CPC分类号： H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

摘要： In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.

摘要翻译： 在一个实施例中，提供了一种用于在处理室内的衬底上沉积钨材料的方法，其包括将衬底暴露于含有钨前体和还原气体的气态混合物，以在钨沉积期间在衬底上沉积钨成核层 处理。 该方法还包括从处理室除去在钨沉积过程中产生的反应副产物，在浸泡过程期间将基底暴露于还原气体以与处理室内的残余钨前体反应，除去在该过程中产生的反应副产物 从处理室浸泡处理，并且在循环沉积工艺期间重复钨沉积工艺和浸泡工艺。 在实施例中，还原气体可以含有乙硼烷或硅烷。

公开(公告)号：US10049881B2

公开(公告)日：2018-08-14

申请号：US13536443

申请日：2012-06-28

申请人： Matthew S. Rogers ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcolm J. Bevan

发明人： Matthew S. Rogers ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcolm J. Bevan

IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/28 ,  H01L21/02 ,  H01L21/321 ,  H01L27/11524

摘要： Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

公开(公告)号：US20130040444A1

公开(公告)日：2013-02-14

申请号：US13536443

申请日：2012-06-28

申请人： MATTHEW S. ROGERS ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcom J. Bevan

发明人： MATTHEW S. ROGERS ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcom J. Bevan

IPC分类号： H01L21/26

CPC分类号： H01L21/28273 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3211 ,  H01L27/11524

摘要： Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

摘要翻译： 本发明的实施例提供了一种用于氮化堆叠材料的改进的装置和方法。 在一个实施例中，远程等离子体系统包括限定用于产生包括离子和自由基的等离子体的第一区域的远程等离子体室，限定用于处理半导体器件的第二区域的处理室，所述处理室包括形成在侧壁 处理室的入口端口与第二区域流体连通，以及设置在远程等离子体室和处理室之间并具有与第一区域和入口流体连通的通道的输送构件，其中输送 构件被构造成使得通道的纵向轴线相对于入口的纵向轴线以大约20度至大约80度的角度相交。

公开(公告)号：US08027746B2

公开(公告)日：2011-09-27

申请号：US12953220

申请日：2010-11-23

申请人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

发明人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

IPC分类号： G06F19/00 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

公开(公告)号：US20110111603A1

公开(公告)日：2011-05-12

申请号：US12953220

申请日：2010-11-23

申请人： BARRY L. CHIN ,  ALFRED W. MAK ,  LAWRENCE CHUNG-LAI LEI ,  MING XI ,  HUA CHUNG ,  KEN KAUNG LAI ,  JEONG SOO BYUN

发明人： BARRY L. CHIN ,  ALFRED W. MAK ,  LAWRENCE CHUNG-LAI LEI ,  MING XI ,  HUA CHUNG ,  KEN KAUNG LAI ,  JEONG SOO BYUN

IPC分类号： H01L21/465 ,  C23C16/455 ,  C23C16/458

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。