公开(公告)号：US11848252B2

公开(公告)日：2023-12-19

申请号：US16846844

申请日：2020-04-13

申请人： AUDI AG ,  Hitachi Energy Switzerland AG

发明人： Thomas Gradinger ,  Daniele Torresin

IPC分类号： H01L23/473 ,  H01L21/48 ,  H01L25/07

CPC分类号： H01L23/473 ,  H01L21/4882 ,  H01L25/072

摘要： A semiconductor component, including a support frame and at least one semiconductor module attached to the support frame, wherein the support frame includes a respective passage (on the edge of which a base plate of the semiconductor module rests, wherein the base plate is soldered to the support frame.

公开(公告)号：US20230402212A1

公开(公告)日：2023-12-14

申请号：US18034567

申请日：2021-11-26

申请人： HITACHI ENERGY SWITZERLAND AG

发明人： Jigar TANK ,  Abhay AGRAWAL

IPC分类号： H01F3/02 ,  H01F27/26 ,  H01F41/02

CPC分类号： H01F3/02 ,  H01F27/263 ,  H01F41/0233

摘要： At least one lamination layer of a transformer core includes a first side limb component, a second side limb component, an upper yoke component including one or more upper yoke segments, a lower yoke component including one or more lower yoke segments, and an intermediate limb component including a first intermediate limb segment and a second intermediate limb segment. The upper yoke component is disposed in between an upper end of the first and second side limb component, the lower yoke component is disposed in between a lower end of the first and second side limb component, and a first end and a second end of the intermediate limb component is disposed in between two consecutive upper yoke segments and two consecutive lower yoke segments, respectively, where at least one of the upper yoke segment and the lower yoke segment is trapezoidal in structure.

公开(公告)号：US20230378753A1

公开(公告)日：2023-11-23

申请号：US18022124

申请日：2021-08-18

申请人： Hitachi Energy Switzerland AG

发明人： Adamantios MARINAKIS ,  Yaman Cansin EVRENOSOGLU ,  Ioannis LYMPEROPOULOS ,  Sandro SCHOENBORN ,  Pawel DAWIDOWSKI ,  Jan POLAND

IPC分类号： H02J3/00 ,  G05B19/042

CPC分类号： H02J3/0012 ,  G05B19/0428 ,  G05B2219/2639

摘要： To generate a decision logic for a controller of an Industrial Automation Control System, IACS, an iterative process is performed in which a decision logic candidate for the decision logic is generated, and a performance of the decision logic candidate in response to scenarios is computed.

公开(公告)号：US20230369408A1

公开(公告)日：2023-11-16

申请号：US18028454

申请日：2020-11-06

申请人： Hitachi Energy Switzerland AG

发明人： Marco BELLINI ,  Jan VOBECKY ,  Lars KNOLL ,  Gianpaolo ROMANO ,  Giovanni ALFIERI

IPC分类号： H01L29/10 ,  H01L29/78

CPC分类号： H01L29/1045 ,  H01L29/7802 ,  H01L29/7813

摘要： A power semiconductor device is provided. In an embodiment, the power semiconductor device comprises a source region, a channel region in the semiconductor body, and a gate electrode at the channel region. The gate electrode is electrically insulated from the semiconductor body. The channel region is of a second conductivity type different from the first conductivity type. The channel region comprises a first dopant having an activation energy of at most 0.15 eV, and a second dopant having an activation energy of at least 0.3 eV.

公开(公告)号：US11799274B2

公开(公告)日：2023-10-24

申请号：US17614730

申请日：2020-03-25

申请人： Hitachi Energy Switzerland AG

发明人： Roberto Cameroni ,  Carlo Granata

IPC分类号： H02B13/075 ,  H02B5/06 ,  H02B13/035 ,  H02B3/00

CPC分类号： H02B13/075 ,  H02B3/00 ,  H02B5/06 ,  H02B13/035

摘要： A tower mounted high voltage gas-insulated switchgear including a supporting structure connected to the lattice structure of a high voltage transmission tower, a first and a second combined interruption and disconnection modules respectively including for each phase, a first and a second combined interruption and disconnection units, a first combined disconnecting and earthing switch having a first fixed contact operatively coupled to said first terminal, a second fixed contact at ground potential and a first movable contact operatively couplable to said first and second fixed contacts for disconnecting and earthing operations; a fast earthing switch interposed between said first fixed contact and said first terminal, a circuit breaker unit electrically connected to said first movable contact of said first combined disconnecting and earthing switch and to a second combined disconnecting and earthing switch.

公开(公告)号：US11789059B2

公开(公告)日：2023-10-17

申请号：US17795300

申请日：2021-01-29

申请人： Hitachi Energy Switzerland AG

发明人： Od Naidu ,  Preetham Venkat Yalla ,  Neethu George

IPC分类号： G01R31/08

CPC分类号： G01R31/085

摘要： Examples of fault location in a power transmission line connecting a first and a second terminal is described. In an example, arrival times of a first peak, a second peak, and a third peak of a travelling wave detected from measurements carried out at the first and second terminals is detected. A rise time associated with the first peak of the travelling wave is calculated. One of a first half and a second half of the power transmission line is identified, as having a fault, based on a comparison of the rise time. One of a first segment, a second segment, a third segment, and a fourth segment of the power transmission line is identified as having the fault. Length of the power transmission line is estimated. The fault location is estimated based on identification of one of the first, second, third, and fourth segments as having the fault.

公开(公告)号：US20230327014A1

公开(公告)日：2023-10-12

申请号：US18026790

申请日：2021-10-08

申请人： Hitachi Energy Switzerland AG

发明人： Marco BELLINI ,  Lars KNOLL

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L29/06

CPC分类号： H01L29/7813 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/0607

摘要： A power semiconductor device comprises a drift layer of a first conductivity type, a source layer of the first conductivity type on the drift layer, with an insulated trench gate electrode which extends through the source layer into the drift layer, and an implant layer of a second conductivity type different than the first conductivity type with a homogeneous doping region having a doping variation of at most 8%. The homogeneous doping region is arranged between the source layer and the drift layer and has a homogeneous doping region thickness of at least 150 nm. A method is provided for producing a power semiconductor device with an insulated trench gate electrode.

公开(公告)号：US20230317389A1

公开(公告)日：2023-10-05

申请号：US18022218

申请日：2021-05-06

申请人： HITACHI ENERGY SWITZERLAND AG

发明人： Georgi Manev ,  Borislav Vasilev ,  Todor Kokev

IPC分类号： H01H33/666 ,  H01H9/00

CPC分类号： H01H33/666 ,  H01H9/0027 ,  H01H9/0038 ,  H01H2033/6667

摘要： A system for controlling a vacuum interrupter for a power diverter switch comprises a main driving shaft which is configured to drive the control cam. The system further comprises the vacuum interrupter which is configured to separate electrical contacts in a vacuum by use of a contact rod, and a transmission unit which is configured to transmit the force generated by the main driving shaft to the contact rod. The transmission unit comprises a lever mechanism with a plurality of rollable guiding elements and a rotatable fork-shaped lever, the lever mechanism is coupled to both the control cam and the contact rod of the vacuum interrupter such that a rotation of the control cam generated by the main driving shaft causes a movement of the contact rod due to a guided rotation of the fork-shaped lever by means of rolling of the guiding elements.

公开(公告)号：US20230317320A1

公开(公告)日：2023-10-05

申请号：US18023438

申请日：2021-09-08

申请人： Hitachi Energy Switzerland AG

发明人： Johannes HENGSTLER ,  Saskia BUFFONI ,  Ulrich STRAUMANN ,  Manuel NAEF ,  Loic FAVE

IPC分类号： H01B13/06 ,  H01B3/44

CPC分类号： H01B13/06 ,  H01B3/44

摘要： The present invention relates to a method for re-establishing an electrical apparatus of medium or high voltage. The method includes



providing an electrical apparatus designed for using an insulation medium containing SF6,
removing SF6 from an insulation space contained in the apparatus and
filling an alternative insulation medium into the insulation space,

wherein the alternative insulation medium is a mixture of at least one organofluorine compound A and a carrier gas containing nitrogen.

公开(公告)号：US11769611B2

公开(公告)日：2023-09-26

申请号：US16964328

申请日：2018-01-23

申请人： HITACHI ENERGY SWITZERLAND AG

发明人： Claes Peter Sjöberg ,  Natalia Gutman ,  Danan Yao ,  Peirong Cai

IPC分类号： H01B17/30 ,  H01F27/04

CPC分类号： H01B17/301 ,  H01F27/04

摘要： Embodiments of the present disclosure relate to a sealing arrangement of a bushing for a power electrical device and a bushing comprising the sealing arrangement. The sealing arrangement includes a top cover; a central conductor going through the top cover; a guide element having a cylinder portion and a flange portion extended from a middle part of the cylinder portion, wherein the cylinder portion is arranged between the top cover and the central conductor, and the flange portion is connected onto the top cover; a static sealing structure provided between the guide element and the top cover; and a dynamic sealing structure provided between the guide element and the central conductor. With the new sealing structure design, it could provide a good sealing performance so that the bushing can be used in various environments.