公开(公告)号：US20230369408A1

公开(公告)日：2023-11-16

申请号：US18028454

申请日：2020-11-06

申请人： Hitachi Energy Switzerland AG

发明人： Marco BELLINI ,  Jan VOBECKY ,  Lars KNOLL ,  Gianpaolo ROMANO ,  Giovanni ALFIERI

IPC分类号： H01L29/10 ,  H01L29/78

CPC分类号： H01L29/1045 ,  H01L29/7802 ,  H01L29/7813

摘要： A power semiconductor device is provided. In an embodiment, the power semiconductor device comprises a source region, a channel region in the semiconductor body, and a gate electrode at the channel region. The gate electrode is electrically insulated from the semiconductor body. The channel region is of a second conductivity type different from the first conductivity type. The channel region comprises a first dopant having an activation energy of at most 0.15 eV, and a second dopant having an activation energy of at least 0.3 eV.