- 专利标题： POWER SEMICONDUCTOR DEVICE AND OPERATING METHOD
-
申请号： US18028454申请日： 2020-11-06
-
公开(公告)号： US20230369408A1公开(公告)日： 2023-11-16
- 发明人: Marco BELLINI , Jan VOBECKY , Lars KNOLL , Gianpaolo ROMANO , Giovanni ALFIERI
- 申请人： Hitachi Energy Switzerland AG
- 申请人地址： CH Baden
- 专利权人： Hitachi Energy Switzerland AG
- 当前专利权人： Hitachi Energy Switzerland AG
- 当前专利权人地址： CH Baden
- 国际申请： PCT/EP2020/081287 2020.11.06
- 进入国家日期： 2023-03-24
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/78
摘要：
A power semiconductor device is provided. In an embodiment, the power semiconductor device comprises a source region, a channel region in the semiconductor body, and a gate electrode at the channel region. The gate electrode is electrically insulated from the semiconductor body. The channel region is of a second conductivity type different from the first conductivity type. The channel region comprises a first dopant having an activation energy of at most 0.15 eV, and a second dopant having an activation energy of at least 0.3 eV.
信息查询
IPC分类:
