公开(公告)号：US20230317818A1

公开(公告)日：2023-10-05

申请号：US18023982

申请日：2021-08-19

申请人： Hitachi Energy Switzerland AG

发明人： Jan VOBECKY ,  Umamaheswara VEMULAPATI

IPC分类号： H01L29/66 ,  H01L29/08 ,  H01L29/423 ,  H01L29/417 ,  H01L29/06 ,  H01L29/74

CPC分类号： H01L29/66363 ,  H01L29/0692 ,  H01L29/0839 ,  H01L29/41716 ,  H01L29/42308 ,  H01L29/74

摘要： Disclosed is a power semiconductor device comprising a semiconductor wafer having a first main side and second main side. The semiconductor wafer comprises parallel thyristor cells, which each comprises (a) a cathode electrode and gate electrode on the first main side; (b) a cathode layer comprising a cathode region of a first conductivity type, forming an ohmic contact with the cathode electrode; (c) a first base layer of a second conductivity type, wherein the cathode region forms a p-n junction between the first base layer and cathode region; (d) a second base layer of the first conductivity type forming a second p-n junction with the first base layer; (e) an anode layer of the second conductivity type separated from the first base layer by the second base layer. The gate electrodes of the plurality of thyristor cells form a gate design comprising multiple polygons each comprising at least four struts.

公开(公告)号：US20240014302A1

公开(公告)日：2024-01-11

申请号：US18038643

申请日：2021-11-24

申请人： Hitachi Energy Switzerland AG

发明人： Jan VOBECKY

IPC分类号： H01L29/747 ,  H01L23/552 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423

CPC分类号： H01L29/747 ,  H01L23/552 ,  H01L29/0692 ,  H01L29/1012 ,  H01L29/42308

摘要： Bidirectional thyristor device comprising a semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface, a first main electrode arranged on the first main surface, and a second main electrode arranged on the second main surface, is specified, wherein the semiconductor body comprises a first base layer of a first conductivity type, a second base layer of the first conductivity type, and a third base layer of a second conductivity type different than the first conductivity type arranged between the first base layer and the second base layer. The first main electrode acts as a cathode for a first thyristor functional element and as an anode for a second thyristor functional element of the bidirectional thyristor device. The bidirectional thyristor device is configured asymmetrically with respect to the first thyristor functional element and the second thyristor functional element.

公开(公告)号：US20230369408A1

公开(公告)日：2023-11-16

申请号：US18028454

申请日：2020-11-06

申请人： Hitachi Energy Switzerland AG

发明人： Marco BELLINI ,  Jan VOBECKY ,  Lars KNOLL ,  Gianpaolo ROMANO ,  Giovanni ALFIERI

IPC分类号： H01L29/10 ,  H01L29/78

CPC分类号： H01L29/1045 ,  H01L29/7802 ,  H01L29/7813

摘要： A power semiconductor device is provided. In an embodiment, the power semiconductor device comprises a source region, a channel region in the semiconductor body, and a gate electrode at the channel region. The gate electrode is electrically insulated from the semiconductor body. The channel region is of a second conductivity type different from the first conductivity type. The channel region comprises a first dopant having an activation energy of at most 0.15 eV, and a second dopant having an activation energy of at least 0.3 eV.

公开(公告)号：US20240038880A1

公开(公告)日：2024-02-01

申请号：US18038652

申请日：2021-11-22

申请人： Hitachi Energy Switzerland AG

发明人： Jan VOBECKY ,  Umamaheswara VEMULAPATI

IPC分类号： H01L29/747 ,  H01L29/06 ,  H01L29/74

CPC分类号： H01L29/747 ,  H01L29/0692 ,  H01L29/7428

摘要： A bidirectional thyristor device (1) comprising a semiconductor body (2) extending between a first main surface (21) and a second main surface (22), is provided wherein a first main electrode (31) and a first gate electrode (41) are arranged on the first main surface and a second main electrode (32) and a second gate electrode (42) are arranged on the second main surface. The first main electrode comprises a plurality of first segments (310) that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode in a view onto the first main surface. The second main electrode comprises a plurality of second segments (320) that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode in a view onto the second main surface.

公开(公告)号：US20230411503A1

公开(公告)日：2023-12-21

申请号：US18038160

申请日：2021-11-19

申请人： Hitachi Energy Switzerland AG

发明人： Jan VOBECKY ,  Ying-Jiang HAFNER

IPC分类号： H01L29/74 ,  H01L29/08 ,  H02M1/32 ,  H02M7/483

CPC分类号： H01L29/7404 ,  H01L29/0834 ,  H01L29/0839 ,  H02M1/325 ,  H02M7/4835

摘要： A module (100) is specified, the module (100) comprising a first module connection (108), a second module connection (109), an energy store (105), a first electrical switch (101) and a second electrical switch (102), wherein a switchable bypass device (1) is arranged between the first module connection (108) and the second module connection (109) and wherein the switchable bypass device (1) is configured to remain in a bidirectional current conducting state in response to a single trigger pulse.