公开(公告)号：US20140179103A1

公开(公告)日：2014-06-26

申请号：US14108771

申请日：2013-12-17

申请人： Pil-Kyu Kang ,  Taeyeong Kim ,  Byung Lyul Park ,  Jumyong Park ,  Jinho Park ,  Kyu-Ha Lee ,  Deok-Young Jung ,  Gilheyun Choi

发明人： Pil-Kyu Kang ,  Taeyeong Kim ,  Byung Lyul Park ,  Jumyong Park ,  Jinho Park ,  Kyu-Ha Lee ,  Deok-Young Jung ,  Gilheyun Choi

IPC分类号： H01L21/768

CPC分类号： H01L25/0657 ,  G11C8/00 ,  G11C16/08 ,  H01L21/6835 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2224/02372 ,  H01L2224/03002 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/13 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13169 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014

摘要： A conductive via of a semiconductor device is provided extending in a vertical direction through a substrate, a first end of the conductive via extending through a first surface of the substrate, so that the first end protrudes in the vertical direction relative to the first surface of the substrate. An insulating layer is provided on the first end of the conductive via and on the first surface of the substrate. An upper portion of a mask layer pattern is removed so that a capping portion of the insulating layer that is on the first end of the conductive via is exposed. A portion of the insulating layer at a side of, and spaced apart from, the conductive via, is removed, to form a recess in the insulating layer. The capping portion of the insulating layer on the first end of the conductive via is simultaneously removed.

摘要翻译： 提供半导体器件的导电通孔，其沿垂直方向穿过衬底延伸，导电通孔的第一端延伸穿过衬底的第一表面，使得第一端相对于衬底的第一表面在垂直方向上突出 底物。 绝缘层设置在导电通孔的第一端和基板的第一表面上。 除去掩模层图案的上部，使得在导电通孔的第一端上的绝缘层的封盖部分露出。 去除绝缘层的与导电通孔相隔一定距离的一部分，以在绝缘层中形成凹陷。 同时去除导电通孔第一端上的绝缘层的封盖部分。

公开(公告)号：US20140035164A1

公开(公告)日：2014-02-06

申请号：US14052691

申请日：2013-10-11

申请人： Kwang-jin Moon ,  Byung-lyul Park ,  Dong-chan Lim ,  Deok-young Jung ,  Gil-heyun Choi ,  Dae-lok Bae ,  Pil-kyu Kang

发明人： Kwang-jin Moon ,  Byung-lyul Park ,  Dong-chan Lim ,  Deok-young Jung ,  Gil-heyun Choi ,  Dae-lok Bae ,  Pil-kyu Kang

IPC分类号： H01L23/522

CPC分类号： H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a via structure having a top surface with a planar portion and a protrusion portion that is surrounded by the planar portion, and includes a conductive structure including a plurality of conductive lines contacting at least a part of the top surface of the via structure.

摘要翻译： 半导体器件包括具有平面部分的顶表面和由平面部分包围的突出部分的通孔结构，并且包括导电结构，该导电结构包括与通孔的顶表面的至少一部分接触的多条导线 结构体。

公开(公告)号：US20130187287A1

公开(公告)日：2013-07-25

申请号：US13627790

申请日：2012-09-26

申请人： Byung-lyul Park ,  Gil-Heyun Choi ,  Suk-Chul Bang ,  Kwang-Jin Moon ,  Dong-Chan Lim ,  Deok-Young Jung

发明人： Byung-lyul Park ,  Gil-Heyun Choi ,  Suk-Chul Bang ,  Kwang-Jin Moon ,  Dong-Chan Lim ,  Deok-Young Jung

IPC分类号： H01L23/498

CPC分类号： H01L21/76898 ,  H01L21/76801 ,  H01L25/0657 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06565

摘要： A semiconductor device includes a circuit pattern over a first surface of a substrate, an insulating interlayer covering the circuit pattern, a TSV structure filling a via hole through the insulating interlayer and the substrate, an insulation layer structure on an inner wall of the via hole and on a top surface of the insulating interlayer, a buffer layer on the TSV structure and the insulation layer structure, a conductive structure through the insulation layer structure and a portion of the insulating interlayer to be electrically connected to the circuit pattern, a contact pad onto a bottom of the TSV structure, and a protective layer structure on a second surface the substrate to surround the contact pad.

摘要翻译： 半导体器件包括在衬底的第一表面上的电路图案，覆盖电路图案的绝缘夹层，填充通过绝缘夹层和衬底的通孔的TSV结构，在通孔的内壁上的绝缘层结构 并且在绝缘中间层的上表面上，具有TSV结构和绝缘层结构的缓冲层，通过绝缘层结构的导电结构和电连接到电路图案的绝缘夹层的一部分，接触垫 到TSV结构的底部，以及在第二表面上的保护层结构，以包围接触垫。

公开(公告)号：US08390120B2

公开(公告)日：2013-03-05

申请号：US12913748

申请日：2010-10-27

申请人： Kwang-Jin Moon ,  Pil-Kyu Kang ,  Dae-Lok Bae ,  Gil-Heyun Choi ,  Byung-Lyul Park ,  Dong-Chan Lim ,  Deok-Young Jung

发明人： Kwang-Jin Moon ,  Pil-Kyu Kang ,  Dae-Lok Bae ,  Gil-Heyun Choi ,  Byung-Lyul Park ,  Dong-Chan Lim ,  Deok-Young Jung

IPC分类号： H01L23/48

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L23/528 ,  H01L2224/16146 ,  H01L2225/06541 ,  H01L2924/01327 ,  H01L2924/00

摘要： A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.

摘要翻译： 半导体器件包括通孔结构和导电结构。 通孔结构具有平坦部分和突出部分的表面。 导电结构形成在平面部分的至少一部分上，而不是在通孔结构的突出部分的至少一部分之上。 例如，导电结构仅形成在平面部分上，而不形成在任何突出部分上，用于在导电结构和通孔结构之间形成高质量的连接。

公开(公告)号：US20130052794A1

公开(公告)日：2013-02-28

申请号：US13597352

申请日：2012-08-29

申请人： Sukchul Bang ,  Kwangjin Moon ,  Byung Lyul Park ,  Dosun Lee ,  Deok-Young Jung ,  Gilheyun Choi

发明人： Sukchul Bang ,  Kwangjin Moon ,  Byung Lyul Park ,  Dosun Lee ,  Deok-Young Jung ,  Gilheyun Choi

IPC分类号： H01L21/762

CPC分类号： H01L23/5226 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00

摘要： Provided are semiconductor devices having through electrodes and methods of fabricating the same. The method includes providing a substrate including top and bottom surfaces facing each other, forming a hole and a gap extending from the top surface of the substrate toward the bottom surface of the substrate, the gap surrounding the hole and being shallower than the hole, filling the hole with an insulating material, forming a metal interconnection line on the top surface of the substrate on the insulating material, recessing the bottom surface of the substrate to expose the insulating material, removing the insulating material to expose the metal interconnection line via the hole, filling the hole with a conductive material to form a through electrode connected to the metal interconnection line, recessing the bottom surface of the substrate again to expose the gap, and forming a lower insulating layer on the bottom surface of the substrate.

摘要翻译： 提供了具有通过电极的半导体器件及其制造方法。 所述方法包括提供包括彼此面对的顶表面和底表面的基板，形成从基板的顶表面延伸到基板的底表面的孔和间隙，围绕孔的间隙并且比孔更浅，填充 所述孔具有绝缘材料，在所述绝缘材料的所述基板的顶表面上形成金属互连线，凹陷所述基板的底表面以暴露所述绝缘材料，去除所述绝缘材料以经由所述孔暴露所述金属互连线 用导电材料填充孔以形成连接到金属互连线的通孔，再次使基板的底表面露出以露出间隙，并在基底的底表面上形成下绝缘层。

公开(公告)号：US20120282736A1

公开(公告)日：2012-11-08

申请号：US13459468

申请日：2012-04-30

申请人： Kwang-Jin MOON ,  Byung-Lyul PARK ,  Do-Sun LEE ,  Gil-Heyun CHOI ,  Suk-Chul BANG ,  Dong-Chan LIM ,  Deok-Young JUNG

发明人： Kwang-Jin MOON ,  Byung-Lyul PARK ,  Do-Sun LEE ,  Gil-Heyun CHOI ,  Suk-Chul BANG ,  Dong-Chan LIM ,  Deok-Young JUNG

IPC分类号： H01L21/50 ,  H01L21/768

CPC分类号： H01L21/2885 ,  H01L21/76898 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/15311

摘要： In a method of manufacturing a semiconductor device, a front end of line (FEOL) process may be performed on a semiconductor substrate to form a semiconductor structure. A back end of line (BEOL) process may be performed on the semiconductor substrate to form a wiring structure electrically connected to the semiconductor structure, thereby formed a semiconductor chip. A hole may be formed through a part of the semiconductor chip. A preliminary plug may have a dimple in the hole. The preliminary plug may be expanded into the dimple by a thermal treatment process to form a plug. Thus, the plug may not have a protrusion protruding from the upper surface of the semiconductor chip, so that the plug may be formed by the single CMP process.

摘要翻译： 在制造半导体器件的方法中，可以在半导体衬底上执行前端（FEOL）工艺以形成半导体结构。 可以在半导体基板上进行后端（BEOL）处理，以形成与半导体结构电连接的布线结构，从而形成半导体芯片。 可以通过半导体芯片的一部分形成孔。 初步插头可能在孔中有一个凹坑。 预先塞子可以通过热处理过程扩展到凹坑中以形成塞子。 因此，插头可以不具有从半导体芯片的上表面突出的突起，从而可以通过单个CMP工艺形成插头。

公开(公告)号：US07605805B2

公开(公告)日：2009-10-20

申请号：US11145332

申请日：2005-06-03

申请人： Deok-Young Jung ,  Jae-Surk Hong ,  Young-Ho Shin

发明人： Deok-Young Jung ,  Jae-Surk Hong ,  Young-Ho Shin

IPC分类号： G09G5/00

CPC分类号： G06F3/0383 ,  G06F3/03543 ,  G06F3/03547 ,  G06F2203/0339

摘要： An electrical touch sensor is provided. The electrical touch sensor includes: a touch detection part having at least one touch pad and generating a first signal having a same delay time regardless of whether the object is in contact with the touch pad and a second signal having a varied delay time according to whether the object is in contact with the touch pad; and a contact signal generator generating a contact signal in response to the delay time-difference between the first and second signals.Therefore, it is possible to increase operation reliability by precisely determining whether the object is in contact with the pad, when the object has charge accumulation characteristics more than a certain level, although its conductive is insufficient. In addition, the electrical touch sensor can determine whether the object is in contact with the pad using only one pad to reduce a layout area of a product.

摘要翻译： 提供电触摸传感器。 电触摸传感器包括：触摸检测部分，具有至少一个触摸板，并且产生具有相同延迟时间的第一信号，而不管对象是否与触摸板接触，以及根据是否具有变化的延迟时间的第二信号 物体与触摸板接触; 以及接触信号发生器，响应于第一和第二信号之间的延迟时间差产生接触信号。 因此，虽然其导电性不足，但是当物体的电荷累积特性大于一定水平时，可以通过精确地确定物体是否与焊盘接触来提高操作可靠性。 此外，电触摸传感器可以使用仅一个垫来确定物体是否与垫接触以减少产品的布局面积。

公开(公告)号：US20050270275A1

公开(公告)日：2005-12-08

申请号：US11113585

申请日：2005-04-25

申请人： Deok-Young Jung

发明人： Deok-Young Jung

IPC分类号： G06F3/038 ,  G09G5/00

CPC分类号： G06F3/03543 ,  G06F3/0304 ,  G06F3/03547 ,  G06F3/0362 ,  G06F3/038 ,  G06F2203/0339

摘要： A scrolling device of human interface device and human interface device using the same is disclosed. The scrolling device of human interface device includes a plurality of touch sensing pads and performs scroll operation by sensing contact of at least one of the plurality of touch sensing pads. Thus, it is possible to prevent a mechanical noise and malfunction caused by mechanical abrasion. Further, it is possible to sense upward and downward scroll movement as well as leftward and rightward scroll movement, thus providing still more various scroll information, so that it is possible to make good use of the scrolling device of human interface device.

摘要翻译： 公开了一种人机界面装置的滚动装置和使用该滚动装置的人机界面装置。 人体接口装置的滚动装置包括多个触摸感测垫，并通过感测多个触摸感测垫中的至少一个的触摸来执行滚动操作。 因此，可以防止由机械磨损引起的机械噪声和故障。 此外，可以感测向上和向下的滚动运动以及向左和向右滚动运动，从而提供更多种类的滚动信息，从而可以充分利用人机界面装置的滚动装置。

公开(公告)号：US09064941B2

公开(公告)日：2015-06-23

申请号：US14601215

申请日：2015-01-20

申请人： Deok-young Jung ,  Pil-kyu Kang ,  Byung-lyul Park ,  Ji-soon Park ,  Seong-min Son ,  Jin-ho An ,  Ji-hwang Kim

发明人： Deok-young Jung ,  Pil-kyu Kang ,  Byung-lyul Park ,  Ji-soon Park ,  Seong-min Son ,  Jin-ho An ,  Ji-hwang Kim

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3105

CPC分类号： H01L21/76898 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/561 ,  H01L21/568 ,  H01L23/291 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/83005 ,  H01L2224/83102 ,  H01L2224/9202 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2224/16145 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer.

公开(公告)号：US20150132950A1

公开(公告)日：2015-05-14

申请号：US14601215

申请日：2015-01-20

申请人： Deok-young JUNG ,  Pil-kyu KANG ,  Byung-lyul PARK ,  Ji-soon PARK ,  Seong-min SON ,  Jin-ho AN ,  Ji-hwang KIM

发明人： Deok-young JUNG ,  Pil-kyu KANG ,  Byung-lyul PARK ,  Ji-soon PARK ,  Seong-min SON ,  Jin-ho AN ,  Ji-hwang KIM

IPC分类号： H01L21/768 ,  H01L21/3105 ,  H01L21/02

CPC分类号： H01L21/76898 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/561 ,  H01L21/568 ,  H01L23/291 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/83005 ,  H01L2224/83102 ,  H01L2224/9202 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2224/16145 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer.

摘要翻译： 半导体器件包括：基板，包括彼此相对的第一表面和第二表面;延伸穿过基板的通孔电极。 通孔电极具有互连金属层和围绕互连金属层的侧表面的阻挡金属层。 通孔电极的一端在第二表面上方突出。 间隔绝缘层可以设置在通孔电极的外侧壁上。 通孔电极焊盘连接到通孔电极并且在基本平行于第二表面的间隔绝缘层上延伸。 在第二表面上层叠第一氧化硅层和氮化硅层。 第一氧化硅层的厚度大于氮化硅层的厚度。