公开(公告)号：US11901406B2

公开(公告)日：2024-02-13

申请号：US17374721

申请日：2021-07-13

Applicant: Analog Power Conversion LLC

Inventor： Amaury Gendron-Hansen ,  Dumitru Gheorge Sdrulla

IPC: H01L29/06 ,  H01L21/765 ,  H01L21/761 ,  H01L29/40

CPC classification number: H01L29/0623 ,  H01L21/761 ,  H01L21/765 ,  H01L29/402

Abstract: A semiconductor device comprises a substrate, a semiconductor layer formed on the substrate; and a high-voltage termination. The high-voltage termination includes a plurality of floating field rings, a deep trench and a dielectric material is disposed within the deep trench. The plurality of floating field rings are formed in the semiconductor layer and respectively disposed around a region of the semiconductor layer. The deep trench is formed in the semiconductor layer and concentrically disposed around an outermost floating field ring of the plurality of floating field rings. The high-voltage termination may also include a field plate disposed over the floating field rings, the deep trench, or both.

公开(公告)号：US11689170B2

公开(公告)日：2023-06-27

申请号：US17014948

申请日：2020-09-08

Applicant: Analog Power Conversion LLC

Inventor： Sam Seiichiro Ochi

IPC: H03H1/00 ,  H03H7/42 ,  H01R13/719

CPC classification number: H03H1/0007 ,  H01R13/719 ,  H03H7/427

Abstract: A transient noise reduction filter comprises a cable including one or more twisted pairs of conductors and one or more common mode chokes (CMCs). The one or more CMCs a formed from respective pluralities of turns of the cable. Each of the CMCs may be a magnetic CMC wherein the plurality of turns of the cable are wrapped around a magnetic core, or an air-core CMC wherein the plurality of turns of the cable are not wrapped around a magnetic core but are instead disposed around a non-magnetic material (such as air)

公开(公告)号：US20230139205A1

公开(公告)日：2023-05-04

申请号：US17453300

申请日：2021-11-02

Applicant: Analog Power Conversion LLC

Inventor： Amaury GENDRON-HANSEN ,  Dumitru Gheorge SDRULLA ,  Leslie Louis SZEPESI

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  G06F30/39

Abstract: A tub of a semiconductor device includes a cool zone with a first projected operating temperature and a hot zone with a second projected operating temperature greater than the first projected operating temperature. A design parameter has a first value in the cool zone and a second value different from the first value in the hot zone. The difference configures the tub to dissipate less heat in the hot zone during operation of the semiconductor device than would be dissipated if the first and second values were equal. The design parameter may be, for example, a tub width, a source structure width, a JFET region width, a channel length, a channel width, a length of a gate, a displacement of a center of the gate relative to a center of a JFET region, a dopant concentration, or a combination thereof.

公开(公告)号：US20230080752A1

公开(公告)日：2023-03-16

申请号：US17475234

申请日：2021-09-14

Applicant: Analog Power Conversion LLC ,  Kyosan Electric Manufacturing Co., Ltd.

Inventor： Sam Seiichiro OCHI ,  Dumitru Gheorge SDRULLA ,  W. Albert GU ,  Tetsuya TAKATA ,  Itsuo YUZURIHARA ,  Tomohiro YONEYAMA ,  Yu HOSOYAMADA

IPC: H03F3/217

Abstract: A full-bridge class-D amplifier circuit comprises first through fourth power devices. First conduction terminals of the first and third power devices are coupled to a first power supply voltage, and second conduction terminals of the second and fourth power devices are coupled to a second power supply voltage. A second conduction terminal of the first power device and a first conduction terminal of the second power device are coupled to a first amplifier output. A second conduction terminal of the third power device and a first conduction terminal of the fourth power device are coupled to a second amplifier output. Left and right driver devices respectively disposed adjacent to left and right sides of the first power device have outputs respectively coupled to left and right control terminals respectively disposed on the left and right sides of the first power device.

公开(公告)号：US20230021169A1

公开(公告)日：2023-01-19

申请号：US17374734

申请日：2021-07-13

Applicant: Analog Power Conversion LLC

Inventor： Dumitru Gheorge SDRULLA ,  Amaury GENDRON-HANSEN

IPC: H01L29/40 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device is formed having a deep trench, a conductive material disposed in the deep trench, and a dielectric disposed within the deep trench and separating the conductive material from surfaces of the deep trench. The conductive material may be carbon, and may be formed by pyrolysis of an organic material such as a photoresist. The deep trench and the conductive material may be parts of a high-voltage termination of an active device of the semiconductor device. The conductive material may be floating or may be connected to an electrode of the active device.

公开(公告)号：US20230019985A1

公开(公告)日：2023-01-19

申请号：US17374721

申请日：2021-07-13

Applicant: Analog Power Conversion LLC

Inventor： Amaury GENDRON-HANSEN ,  Dumitru Gheorge SDRULLA

IPC: H01L29/06 ,  H01L29/40 ,  H01L21/761 ,  H01L21/765

Abstract: A semiconductor device comprises a substrate, a semiconductor layer formed on the substrate; and a high-voltage termination. The high-voltage termination includes a plurality of floating field rings, a deep trench and a dielectric material is disposed within the deep trench. The plurality of floating field rings are formed in the semiconductor layer and respectively disposed around a region of the semiconductor layer. The deep trench is formed in the semiconductor layer and concentrically disposed around an outermost floating field ring of the plurality of floating field rings. The high-voltage termination may also include a field plate disposed over the floating field rings, the deep trench, or both.

公开(公告)号：US20230012738A1

公开(公告)日：2023-01-19

申请号：US17374706

申请日：2021-07-13

Applicant: Analog Power Conversion LLC

Inventor： Amaury GENDRON-HANSEN ,  Dumitru Gheorge SDRULLA ,  Leslie Louis SZEPESI

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/47 ,  H01L27/088

Abstract: A semiconductor device includes a substrate, and a plurality of active regions disposed over the substrate. The plurality of active regions have a first total area. One or more inactive regions are also disposed over the substrate. The one or more inactive regions have a second total area. The second total area is greater than or equal to 1.5 times the first total area. The active regions may be formed in an epitaxial layer formed over the substrate. A plurality of cells of an active device may be disposed in the plurality of active regions. The inactive regions may include only structures that do not dissipate substantial power when the semiconductor device is functioning as it is designed to function.