Compact high current broad beam ion implanter
    182.
    发明授权
    Compact high current broad beam ion implanter 失效
    紧凑型大电流宽束离子注入机

    公开(公告)号:US5350926A

    公开(公告)日:1994-09-27

    申请号:US29766

    申请日:1993-03-11

    CPC classification number: H01J37/05 H01J37/3171

    Abstract: A compact high current broad beam ion implanter capable of serial processing employs a high current density source, an analyzing magnet to direct a desired species through a resolving slit, and a second magnet to deflect the resultant beam while rendering it parallel and uniform along its width dimension. Both magnets have relatively large pole gaps, wide input and output faces, and deflect through a small radius of curvature to produce a beam free of instabilities. Multipole elements incorporated within at least one magnet allow higher order aberrations to be selectively varied to locally adjust beam current density and achieve the high degree of uniformity along the beam width dimension.

    Abstract translation: 能够进行串联处理的紧凑型高电流宽光束离子注入机采用高电流密度源,分析磁铁通过分辨狭缝引导所需物质,以及第二磁体使得所得到的光束偏转,同时使其沿其宽度平行和均匀 尺寸。 两个磁体具有相对较大的极间隙,宽的输入和输出面,并且通过小的曲率半径偏转以产生没有不稳定性的光束。 结合在至少一个磁体中的多极元件允许选择性地改变高阶像差,以局部地调整束电流密度并且沿着光束宽度尺寸实现高度均匀性。

    Direct imaging type SIMS instrument
    183.
    发明授权
    Direct imaging type SIMS instrument 失效
    直接成像式SIMS仪器

    公开(公告)号:US4912326A

    公开(公告)日:1990-03-27

    申请号:US244484

    申请日:1988-09-14

    Applicant: Motohiro Naito

    Inventor: Motohiro Naito

    CPC classification number: H01J49/32

    Abstract: There is disclosed a direct imaging type SIMS (secondary ion mass spectrometry) instrument having a mass analyzer comprising superimposed fields. The superimposed fields consist of a toroidal electric field and a uniform magnetic field substantially perpendicular to the electric field. In said electric field, the central orbit of the ion beam is located in an equipotential plane. The mass analyzer causes an image of the region on the sample bombarded with a primary beam to be focused onto a two-dimensional detector to form a mass-filtered ion image. The SIMS instrument can operate in a mode where only the intensity of the magnetic field of the mass analyzer is set equal to zero. In this mode, only ions having a selected energy within a certain energy bandwidth produce an image, that is, an energy-filtered ion image is formed.

    Abstract translation: 公开了具有包括叠加场的质量分析仪的直接成像型SIMS(二次离子质谱)仪器。 叠加的场由环形电场和基本垂直于电场的均匀磁场组成。 在所述电场中,离子束的中心轨道位于等电位平面中。 质量分析器使得用主光束轰击的样品上的区域的图像聚焦在二维检测器上以形成质量过滤的离子图像。 SIMS仪器可以在仅将质量分析器的磁场的强度设置为等于零的模式下工作。 在该模式中,只有具有一定能量带宽内的选定能量的离子产生图像,即形成能量过滤离子图像。

    Apparatus and methods for ion implantation
    184.
    发明授权
    Apparatus and methods for ion implantation 失效
    用于离子注入的设备和方法

    公开(公告)号:US4847504A

    公开(公告)日:1989-07-11

    申请号:US832327

    申请日:1986-02-24

    Applicant: Derek Aitken

    Inventor: Derek Aitken

    Abstract: A system for implanting ions into a target element including a source arrangement for producing an ion beam; a beam analyzing arrangement for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element. The analyzing arrangement has an ion dispersion plane associated therewith. The source arrangement has an associated ion emitting envelope including an area of substantial extension in a plane parallel to the ion dispersion plane and producing ions entering said analyzing arrangement which are travelling substantially either toward or from a common apparent line object lying in a plane perpendicular to the ion dispersion plane.

    Abstract translation: 一种用于将离子注入到包括用于产生离子束的源装置的目标元件中的系统; 用于接收离子束的束分析装置,并且基于质量选择性地分离束中的各种离子物质以产生分析的束; 以及设置在分析光束的路径中以允许预选离子物质传递到目标元件的光束分辨装置。 分析装置具有与其相关联的离子色散平面。 源装置具有相关联的离子发射外壳,其包括在平行于离子色散平面的平面中具有显着延伸的区域,并产生进入所述分析装置的离子,其基本上朝向或离开位于垂直于垂直于 离子色散平面。

    Process for electron beam guiding with energy selection and electron
spectrometer
    185.
    发明授权
    Process for electron beam guiding with energy selection and electron spectrometer 失效
    用能量选择和电子光谱仪进行电子束引导的过程

    公开(公告)号:US4845361A

    公开(公告)日:1989-07-04

    申请号:US149596

    申请日:1988-01-28

    CPC classification number: H01J49/44 H01J49/06

    Abstract: High energy resolution at high electron current at the specimen or at the detector is obtained by an electron beam guiding with focusing energy selection, in particular in an electron spectrometer with emission system and at least one energy dispersive system with different focusing in two mutually perpendicular directions, by a non-circular-symmetrical lens system placed after or before the energy dispersive system and correcting the different focusing of the electrons in the two mutually perpendicular directions such that either the virtual or the real entry stop of the energy dispersive system is imaged on an accessible image plane outside the energy dispersive system or an object outside the energy dispersive system is imaged on the virtual or real exit stop of the latter.

    Abstract translation: 通过具有聚焦能量选择的电子束引导,特别是在具有发射系统的电子光谱仪和至少一个在两个相互垂直的方向上具有不同聚焦的能量分散系统的能量分散系统,可以获得在样品或检测器处的​​高电子电流下的高能量分辨率 通过放置在能量色散系统之后或之前的非圆形对称透镜系统,并校正电子在两个相互垂直的方向上的不同聚焦,使得能量色散系统的虚拟或实际进入停止被成像 在能量分散系统之外的可访问图像平面或能量分散系统外部的对象被成像在后者的虚拟或实际出口停止点上。

    Ion implantation apparatus for semiconductor manufacture
    186.
    发明授权
    Ion implantation apparatus for semiconductor manufacture 失效
    用于半导体制造的离子注入装置

    公开(公告)号:US4839523A

    公开(公告)日:1989-06-13

    申请号:US588981

    申请日:1984-03-13

    CPC classification number: C30B31/22 H01J37/05 H01J37/317 H01J37/3171

    Abstract: An ion implantation apparatus which is suited for manufacturing semiconductor devices and which is particularly suited for implanting double charged ions into the wafers 22. Ions of a predetermined mass only are selected by a mass-separating electromagnet 14 from an ion beam 12 that is emitted from an ion source 10, and are implanted into the wafer 22 via a slit 16. Between the slit 16 and the mass-separating electromagnet, there are provided field electrodes 24 having a direction of deflection which is the same as that of the mass-separating electromagnet 14 to separate ions having different energy levels, and deflection magnets 26 having a direction of deflection at right angles with the direction of deflection of the mass-separating electromagnet. The slit 16 is arranged so that undeflected neutral particles and low energy ions deflected by the field electrodes 24 will pass through the slit while high energy ions will be deflected the proper amount to pass through the slit. Correction means 32 can be located between the slit and the wafer to ensure that the beam passing through the slit strikes the wafer at the proper angle.

    Abstract translation: 一种适用于制造半导体器件的离子注入装置,其特别适于将双电荷离子注入到晶片22中。仅通过质量分离电磁体14从离子束12中选出一个预定质量的离子,离子束12从 离子源10,并且经由狭缝16注入晶片22中。在狭缝16和质量分离电磁体之间,提供具有与质量分离的偏转方向相同的偏转方向的场电极24 用于分离具有不同能级的离子的电磁体14以及具有与质量分离电磁体的偏转方向成直角的偏转方向的偏转磁体26。 狭缝16布置成使得由场电极24偏转的未偏转的中性粒子和低能离子将穿过狭缝,同时高能离子将被偏转适当的量以通过狭缝。 校正装置32可以位于狭缝和晶片之间,以确保通过狭缝的光束以适当的角度撞击晶片。

    Focused ion beam microfabrication column
    188.
    发明授权
    Focused ion beam microfabrication column 失效
    聚焦离子束微细加工柱

    公开(公告)号:US4563587A

    公开(公告)日:1986-01-07

    申请号:US482745

    申请日:1983-04-07

    CPC classification number: H01J37/05 H01J37/3007

    Abstract: Focused ion beam microfabrication column (10) produces an ion beam from ion source (12), focuses the beam by objective lens (24) onto the plane of electrode (36). ExB filter (44) separates out the ion species at a low energy portion of the beam. The beam of selected species is first accelerated by energy central lens (38) which has a controllable potential for controlling the final beam energy to the target. The beam is accelerated by final accelerator lens (54) and is demagnified and focused on the target by that lens. Beam deflector (64) deflects the beam for programmed ion beam work on the target (60).

    Abstract translation: 聚焦离子束微加工柱(10)从离子源(12)产生离子束,将物镜(24)聚焦在电极(36)的平面上。 ExB过滤器(44)在光束的低能量部分分离离子种类。 所选物种的光束首先被能量中心透镜(38)加速,该中心透镜具有用于控制目标的最终光束能量的可控电位。 光束被最终加速器透镜(54)加速,并被该透镜缩小并聚焦在目标上。 光束偏转器(64)将用于编程离子束工作的光束偏转到目标(60)上。

    Monochromator for charged particles
    189.
    发明授权
    Monochromator for charged particles 失效
    带电粒子的单色器

    公开(公告)号:US4412131A

    公开(公告)日:1983-10-25

    申请号:US249246

    申请日:1981-03-30

    CPC classification number: H01J49/26 H01J37/05

    Abstract: A monochromator for charged particles comprises a premonochromator and a main monochromator is tandem with a retarding lens disposed therebetween. The arrangement is suitable for electron energy loss spectrometry due to the high achievable intensities.

    Abstract translation: 用于带电粒子的单色器包括预分选机,并且主单色仪与设置在其间的延迟透镜串联。 由于高可实现的强度,该装置适用于电子能量损失光谱测定。

    Stigmatic, crossed-field velocity filter
    190.
    发明授权
    Stigmatic, crossed-field velocity filter 失效
    瞬态,交叉场速度滤波器

    公开(公告)号:US3723733A

    公开(公告)日:1973-03-27

    申请号:US3723733D

    申请日:1971-05-12

    Inventor: SELIGER R WILSON R

    CPC classification number: H01J37/3171 H01J37/05

    Abstract: A stigmatic, crossed-field velocity filter for nondeflection purification of an ion beam employs shaped electrodes to increase the uniformity of the electric field and employs shaped magnetic pole pieces to produce a nonuniform magnetic field for stigmatic passage of the selected ion species through the filter.

    Abstract translation: 用于非离子化纯化离子束的交错场速度滤波器使用成形电极来增加电场的均匀性,并且使用成形磁极片以产生用于所选择的离子物质通过过滤器的连续通过的不均匀磁场。

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