Apparatus for ion implantation
    1.
    发明授权
    Apparatus for ion implantation 失效
    离子注入装置

    公开(公告)号:US4587432A

    公开(公告)日:1986-05-06

    申请号:US637514

    申请日:1984-08-03

    Applicant: Derek Aitken

    Inventor: Derek Aitken

    CPC classification number: H01J37/05 H01J37/3171

    Abstract: An ion implantation system in which surfaces of ion flight tube and drift tube perpendicular to ion dispersion plane have geometric configuration which precludes sputtering of contaminants onto path through resolving slit.

    Abstract translation: 一种离子注入系统,其中离子飞行管和漂移管的表面垂直于离子色散平面具有几何构型,其排除了通过分辨狭缝将污染物溅射到路径上。

    Apparatus and methods relating to ion implantation and heat transfer
    2.
    发明授权
    Apparatus and methods relating to ion implantation and heat transfer 失效
    关于离子植入和热传递的装置和方法

    公开(公告)号:US5124557A

    公开(公告)日:1992-06-23

    申请号:US592374

    申请日:1990-10-03

    Applicant: Derek Aitken

    Inventor: Derek Aitken

    CPC classification number: H01L21/67103 H01L21/68

    Abstract: Apparatus for presenting target elements (16) such as semi-conductor wafers to an ion beam (13) for ion implantation comprises a support rotor (19) for carrying the targets (16) on support bases (21) mounted on arms (22) extending radially from a core structure (20) of the rotor. The target elements (16) are rotated by the rotor (19) through the ion beam to produce scanning across the target elements. Each support base (21) is rotatable about the radial axis of its support arm. The rotation of the base (21) allows adjustment of the ion implantation angle. The implantation normally takes place with the target vertical and the axis of scanning rotation horizontal. Each support base (21) is also rotatable through 90.degree. to allow loading and unloading of target elements while the support base is horizontal. Good thermal contact is made between the target element and the support base by an intervening sheet having upstanding flaps (61) which are urged outwardly into contact with the element (16) by the effect of centrifugal force.

    Components for evacuated equipment
    3.
    发明授权
    Components for evacuated equipment 失效
    疏散设备组件

    公开(公告)号:US4580619A

    公开(公告)日:1986-04-08

    申请号:US310841

    申请日:1981-10-13

    Applicant: Derek Aitken

    Inventor: Derek Aitken

    CPC classification number: C09K5/00 H01J37/20 H01J2237/2001

    Abstract: Evacuable equipment wherein for effective thermal transfer use is made of a thermally conductive fluid confined by a flexible diaphragm for heat transfer across the diaphragm between the fluid and a component forming part of or being treated in the equipment and situated under vacuum in thermal contact with the diaphragm, said diaphragm comprising a flexible gas-impermeable metal layer preventing uptake of gases by the fluid when the equipment is not under vacuum.

    Abstract translation: 可抽出的设备,其中对于有效的热转移使用由导热流体制成,该导热流体由柔性隔膜限制,用于横跨隔膜的流体在流体和形成部件之间或在设备中被处理或在真空下与热接触的部件 隔膜,所述隔膜包括柔性气体不可渗透金属层,当设备不在真空下时防止流体吸收气体。

    Apparatus and methods for ion implantation
    4.
    发明授权
    Apparatus and methods for ion implantation 失效
    用于离子注入的设备和方法

    公开(公告)号:US4578589A

    公开(公告)日:1986-03-25

    申请号:US641027

    申请日:1984-08-15

    Applicant: Derek Aitken

    Inventor: Derek Aitken

    CPC classification number: H01J37/3171

    Abstract: A system for implanting ions into a target element including a source arrangement for producing an ion beam; a beam analyzing arrangement for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element. The analyzing arrangement has an ion dispersion plane associated therewith. The source arrangement has an associated ion emitting envelope including an area of substantial extension in a plane parallel to the ion dispersion plane and producing ions entering said analyzing arrangement which are travelling substantially either toward or from a common apparent line object lying in a plane perpendicular to the ion dispersion plane.

    Abstract translation: 一种用于将离子注入到包括用于产生离子束的源装置的目标元件中的系统; 用于接收离子束的束分析装置,并且基于质量选择性地分离束中的各种离子物质以产生分析的束; 以及设置在分析光束的路径中以允许预选离子物质传递到目标元件的光束分辨装置。 分析装置具有与其相关联的离子色散平面。 源装置具有相关联的离子发射外壳,其包括在平行于离子色散平面的平面中具有显着延伸的区域,并产生进入所述分析装置的离子,其基本上朝向或离开位于垂直于垂直于 离子色散平面。

    Apparatus for and method of producing ion beams
    5.
    发明授权
    Apparatus for and method of producing ion beams 失效
    用于生产离子束的设备和方法

    公开(公告)号:US5300785A

    公开(公告)日:1994-04-05

    申请号:US852209

    申请日:1992-06-04

    Applicant: Derek Aitken

    Inventor: Derek Aitken

    CPC classification number: H01J37/08 H01J2237/0827 H01J2237/31701

    Abstract: Apparatus (28) for implanting ions into a target element (26) comprising a circular array of hot cathode, are discharge, ion sources (29) mounted on a rotary carousel (13) or a linear mechanism. An annular rotary support (15) around the carousel supports a plurality of extraction electrodes (18). A housing (20,23) defines an outlet path (32) for the ion beam from the ion source (29). The ion beam is directed through a beam analyzer (24) and through accelaration stages (25) to means (27) for scanning beam relative to the target (26) to be implanted. The carousel (13) and the annual support (15) can both be rotated, so as to bring into cooperating relationship required combinations of ion source (29) and extraction electrode (18).

    Abstract translation: PCT No.PCT / GB91 / 01696 Sec。 371日期:1992年6月4日 102(e)日期1992年6月4日PCT 1991年10月2日PCT PCT。 出版物WO92 / 06486 日期:1992年4月16日。用于将离子注入包括热阴极的圆形阵列的目标元件(26)中的装置(28)是安装在旋转圆盘传送带(13)或线性机构上的放电离子源(29)。 围绕圆盘传送带的环形旋转支撑件(15)支撑多个提取电极(18)。 壳体(20,23)限定用于离子源(29)的离子束的出口路径(32)。 离子束被引导通过光束分析器(24)并且通过加速级(25)到用于相对于要植入的靶(26)扫描光束的装置(27)。 旋转盘(13)和年度支撑件(15)都可以旋转,以便形成需要离子源(29)和抽出电极(18)的组合的协作关系。

    Apparatus and methods relating to scanning ion beams
    6.
    发明授权
    Apparatus and methods relating to scanning ion beams 失效
    与扫描离子束相关的装置和方法

    公开(公告)号:US5099130A

    公开(公告)日:1992-03-24

    申请号:US664665

    申请日:1991-03-05

    Applicant: Derek Aitken

    Inventor: Derek Aitken

    CPC classification number: H01J37/3007 H01J37/3171

    Abstract: A converter 26 for converting an angularly scanned ion beam 11 into a parallel scanned ion beam comprises first and second electrodes 27 and 28 positioned adjacent each other and shaped to follow concentric part-conical surfaces. The inner part-conical electrode 27 is at beam line potential and has an entry aperture 31 for receiving the ion beam, and an exit aperture 32 through which the beam exits after being bent through 90.degree. by a potential difference across the electrodes 27 and 28. The entry beam 11 is angularly scanned by an electrostatic scanner positioned where the beam 11 passes the cone axis 33, the beam being scanned through paths lying along radii of the cone axis. The exit beam 11 emerges in a direction which is substantially parallel to the cone axis throughout the angular scanning of the entry beam.

    Apparatus and method relating to charged particles

    公开(公告)号:US06498348B2

    公开(公告)日:2002-12-24

    申请号:US09736253

    申请日:2000-12-15

    Applicant: Derek Aitken

    Inventor: Derek Aitken

    Abstract: The present invention provides an apparatus for acting upon charge particles in dependence upon on or more parameters including mass and/or energy and/or charged state of the particles. The apparatus includes an array of elongate magnetic poles extending longitudinally in an elongation direction of the array; an array reference surface extending in the array elongation direction and passing through the array with a magnetic pole on each side of the reference surface; a means for providing charged particles entering into or originating in the field of the magnetic pole array. The magnetic poles are configured in a plane perpendicular to the elongation direction to give parameter dependent change of direction to charged particles moving in array with a direction of movement substantially parallel to the reference surface, whereby parameter dependent selection of charged particles may be achieved by parameter dependent dispersion in a plane transverse to the reference surface.

    Apparatus and methods for ion implantation
    9.
    发明授权
    Apparatus and methods for ion implantation 失效
    用于离子注入的设备和方法

    公开(公告)号:US5389793A

    公开(公告)日:1995-02-14

    申请号:US223384

    申请日:1994-04-05

    Abstract: A system for implanting ions of a prearranged chemical species into a plurality of semiconductor wafers. A beam analyzing arrangement receives an ion beam and selective separates various ion species in the beam on the basis of mass to produce an analyzed beam exiting the analyzing arrangement. A wafer scanning arrangement scans a plurality of wafers through the accelerated ion beam. The analyzing arrangement has an ion dispersion plane associated therewith and the source arrangement has an associated ion emitting envelope including an area pf substantial extension in a plane parallel to the ion dispersion plane and produces an ion beam characterized by a beam envelope which retains an area of substantial extension in a plane paralled to ion dispersion plane throughout the region between the source and the analyzing arrangement and by ions entering the analyzing arrangement travelling substantially either toward or from a common apparent line object perpendicular to the ion dispersion plane. The wafer scanning arrangement comprises a scan wheel assembly for carrying a plurality of semiconductor wafers and having a central axis, and a drive arrangement for rotating the scan wheel assembly about the central axis to scan the wafers across the beam in one coordinate direction. A scan arrangement produces relative scanning movement between the scan wheel and the ion beam in another coordinate direction.

    Abstract translation: 一种用于将预定化学物质的离子注入多个半导体晶片的系统。 光束分析装置接收离子束并且基于质量选择性地分离光束中的各种离子物质以产生离开分析装置的分析束。 晶片扫描装置通过加速离子束扫描多个晶片。 分析装置具有与其相关联的离子色散平面,并且源排列具有相关联的离子发射外壳,其包括在平行于离子色散平面的平面中的基本延伸的面积,并且产生离子束,其特征在于束保护区域 在源和分析装置之间的整个区域中离散分散平面的大面积延伸,以及进入分析装置的离子基本上朝向或离开垂直于离子分散平面的公共视线对象行进。 晶片扫描装置包括用于承载多个半导体晶片并具有中心轴线的扫描轮组件和用于围绕中心轴旋转扫描轮组件的驱动装置,以在一个坐标方向上跨过光束扫描晶片。 扫描装置在另一个坐标方向上在扫描轮和离子束之间产生相对扫描运动。

    Method and apparatus relating to ion implantation
    10.
    发明授权
    Method and apparatus relating to ion implantation 失效
    与植入相关的方法和装置

    公开(公告)号:US5194748A

    公开(公告)日:1993-03-16

    申请号:US720522

    申请日:1991-06-21

    Applicant: Derek Aitken

    Inventor: Derek Aitken

    CPC classification number: H01J37/3171 H01J2237/20228

    Abstract: In ion implantation apparatus, a plurality of targets on supports are presented to an ion beam. The targets are moved back and forth in reciprocatory motion through the ion beam. Each target is reversed while outside the ion beam, and the reversals of the targets are effected while another target or targets is or are moving through the beam. Where two targets are presented, the sequence is that the two target supports follow each other through the ion beam in one direction, and then follow each other through the beam in the opposite direction, each target being reversed in direction while the other is passing through the beam.

    Abstract translation: PCT No.PCT / GB90 / 01653 Sec。 371日期1991年6月21日 102(e)1991年6月21日PCT PCT 1990年10月26日PCT公布。 公开号WO91 / 06972 日期1991年5月16日。在离子注入装置中,将支撑体上的多个靶呈现给离子束。 目标在往复运动中通过离子束来回移动。 每个目标在离子束外部反转,并且目标的反转受到影响,而另一个目标或目标正在或正在通过光束移动。 在提出两个目标的情况下,序列是两个目标支撑沿着一个方向通过离子束彼此相邻,然后沿相反方向彼此相对地通过光束,每个目标在方向上反转,而另一个目标通过 梁。

Patent Agency Ranking