公开(公告)号：US20150123172A1

公开(公告)日：2015-05-07

申请号：US14070286

申请日：2013-11-01

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dajiang Yang ,  Zhibin Xiong ,  Dyson H. Tai

IPC: H01L27/148

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region.

Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管，多个光电二极管，共享浮动扩散区，第一传输门和第二传输门。 第一光电二极管设置在半导体材料中。 第一光电二极管具有第一曝光区域和第一掺杂浓度。 多个光电二极管也设置在半导体材料中。 多个光电二极管中的每个光电二极管具有第一曝光区域和第一掺杂浓度。 第一传输栅极被耦合以将第一图像电荷从第一光电二极管传递到共享浮动扩散区域。 第二传输门被耦合以将分布图像电荷从多个光电二极管中的每个光电二极管传递到共享浮动扩散区域。

公开(公告)号：US20150076639A1

公开(公告)日：2015-03-19

申请号：US14030395

申请日：2013-09-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Jin Li ,  Duli Mao ,  Dyson H. Tai

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627

Abstract: A pixel array includes a plurality of photodiodes disposed in a semiconductor layer and arranged in the pixel array. A color filter layer is disposed proximate to the semiconductor layer. Light is to be directed to at least a first one of the plurality of photodiodes through the color filter layer. An optical shield layer is disposed proximate to the color filter layer. The color filter layer is disposed between the optical shield layer and the semiconductor layer. The optical shield layer shields at least a second one of the plurality of photodiodes from the light.

Abstract translation: 像素阵列包括设置在半导体层中并布置在像素阵列中的多个光电二极管。 滤色器层靠近半导体层设置。 光通过滤色器层被引导到多个光电二极管中的至少第一个。 光屏蔽层靠近滤色器层设置。 滤色器层设置在光学屏蔽层和半导体层之间。 光屏蔽层屏蔽来自光的多个光电二极管中的至少一个。

公开(公告)号：US20150054106A1

公开(公告)日：2015-02-26

申请号：US14528991

申请日：2014-10-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Ashish Shah ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469

Abstract: Embodiments of the invention relate to a camera assembly including a rear-facing camera and a front-facing camera operatively coupled together (e.g., bonded, stacked on a common substrate).In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI image sensor wafer may be used as a handle wafer for a BSI image sensor wafer when it is thinned, thereby decreasing the thickness of the overall camera module. According to other embodiments of the invention, two package dies, one a BSI image sensor, the other an FSI image sensor, are stacked on a common substrate such as a printed circuit board, and are operatively coupled together via redistribution layers.

Abstract translation: 本发明的实施例涉及一种照相机组件，其包括背面照相机和可操作地耦合在一起的例如相机（例如，粘合的，堆叠在公共衬底上）的前置照相机。 在本发明的一些实施例中，具有前侧照明（FSI）成像像素阵列的系统被结合到具有背面照明（BSI）成像像素阵列的系统，从而产生具有最小尺寸的照相机组件（例如，减小的 厚度与现有技术的解决方案相比）。 可以使用FSI图像传感器晶片作为BSI图像传感器晶片的处理晶片，当其变薄时，从而减小整个相机模块的厚度。 根据本发明的其它实施例，两个封装管芯，一个BSI图像传感器，另一个是FSI图像传感器，堆叠在诸如印刷电路板的公共基板上，并且通过再分配层可操作地耦合在一起。

公开(公告)号：US08941159B2

公开(公告)日：2015-01-27

申请号：US13754465

申请日：2013-01-30

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H01L21/02 ,  H01L27/146 ,  G02B5/20 ,  G02B1/10

CPC classification number: G02B5/201 ,  G02B1/105 ,  G02B1/14 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

Abstract: Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first clear hard mask layer and the second hard mask layer formed thereon, a second color filter having the first clear hard mask layer formed thereon, and a third color filter having no clear hard mask layer formed thereon. Other embodiments are disclosed and claimed.

Abstract translation: 包括形成在其上形成有像素阵列的基板上的滤色器装置的装置的实施例。 滤色器装置包括具有形成在其上的第一透明硬掩模层和第二透明硬掩模层的透明滤光器，具有形成在其上的第一透明硬掩模层和第二硬掩模层的第一滤色器，具有第二透明硬掩模层的第二滤色器， 形成在其上的第一透明硬掩模层和形成有透明硬掩模层的第三滤色器。 公开和要求保护其他实施例。

公开(公告)号：US08921187B2

公开(公告)日：2014-12-30

申请号：US13777197

申请日：2013-02-26

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643

Abstract: Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A layer of photoresist is deposited over the sacrificial layer, which is patterned and etched to expose the surface of the substrate over the photosensitive region and at least part of the transfer gate top surface, leaving a sacrificial spacer on the sidewall of the transfer gate closest to the photosensitive region. The substrate is plasma doped to form a pinning layer between the photosensitive region and the surface of the substrate. The spacing between the pinning layer and the sidewall of the transfer gate substantially corresponds to a thickness of the sacrificial spacer. Other embodiments are disclosed and claimed.

Abstract translation: 一种方法的实施方案包括在光敏区域上方的基底表面上沉积牺牲层，在转移栅极的顶表面上，以及至少最靠近光敏区域的转移栅极的侧壁，牺牲层具有 选择厚度。 在牺牲层上沉积一层光致抗蚀剂，其被图案化和蚀刻以在基片的表面上在感光区域和至少部分传输栅极顶表面上露出基底表面，在传输门的侧壁上留下牺牲隔离物 到感光区域。 衬底是等离子体掺杂的，以在光敏区域和衬底的表面之间形成钉扎层。 钉扎层和转移门的侧壁之间的间隔基本上对应于牺牲间隔物的厚度。 公开和要求保护其他实施例。

公开(公告)号：US08900912B2

公开(公告)日：2014-12-02

申请号：US13927495

申请日：2013-06-26

Applicant: Omnivision Technologies, Inc.

Inventor： Gang Chen ,  Ashish Shah ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469

Abstract: Embodiments of the invention relate to a camera assembly including a rear-facing camera and a front-facing camera operatively coupled together (e.g., bonded, stacked on a common substrate).In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI image sensor wafer may be used as a handle wafer for a BSI image sensor wafer when it is thinned, thereby decreasing the thickness of the overall camera module. According to other embodiments of the invention, two package dies, one a BSI image sensor, the other an FSI image sensor, are stacked on a common substrate such as a printed circuit board, and are operatively coupled together via redistribution layers.

Abstract translation: 本发明的实施例涉及一种照相机组件，其包括背面照相机和可操作地耦合在一起的例如相机（例如，粘合的，堆叠在公共衬底上）的前置照相机。 在本发明的一些实施例中，具有前侧照明（FSI）成像像素阵列的系统被结合到具有背面照明（BSI）成像像素阵列的系统，从而产生具有最小尺寸的照相机组件（例如，减小的 厚度与现有技术的解决方案相比）。 可以使用FSI图像传感器晶片作为BSI图像传感器晶片的处理晶片，当其变薄时，从而减小整个相机模块的厚度。 根据本发明的其它实施例，两个封装管芯，一个BSI图像传感器，另一个是FSI图像传感器，堆叠在诸如印刷电路板的公共基板上，并且通过再分配层可操作地耦合在一起。

公开(公告)号：US20140346572A1

公开(公告)日：2014-11-27

申请号：US14333767

申请日：2014-07-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/148

CPC classification number: H01L27/14812 ,  H01L27/14614 ,  H01L27/14689 ,  H01L27/14806 ,  H01L31/18

Abstract: A pixel cell includes a photodiode, a storage transistor, a transfer transistor and an output transistor disposed in a semiconductor substrate. The transfer transistor selectively transfers image charge accumulated in the photodiode from the photodiode to the storage transistor. The output transistor selectively transfers the image charge from the storage transistor to a readout node. A first isolation fence is disposed over the semiconductor substrate separating a transfer gate of the transfer transistor from a storage gate of the storage transistor. A second isolation fence is disposed over the semiconductor substrate separating the storage gate from an output gate of the output transistor. Thicknesses of the first and second isolation fences are substantially equal to spacing distances between the transfer gate and the storage gate, and between the storage gate and the output gate, respectively.

Abstract translation: 像素单元包括设置在半导体衬底中的光电二极管，存储晶体管，传输晶体管和输出晶体管。 转移晶体管将从光电二极管累积的图像电荷选择性地转移到存储晶体管。 输出晶体管将图像电荷从存储晶体管选择性地传输到读出节点。 第一隔离栅栏设置在半导体衬底上，用于将转移晶体管的转移栅极与存储晶体管的存储栅极分开。 第二隔离栅栏设置在半导体衬底上，以将存储栅极与输出晶体管的输出栅极分离。 第一和第二隔离栅栏的厚度分别基本上等于传输栅极和存储栅极之间以及存储栅极和输出栅极之间的间隔距离。

公开(公告)号：US20140327102A1

公开(公告)日：2014-11-06

申请号：US14331652

申请日：2014-07-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

IPC: H01L31/0224 ,  H01L31/103

CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. The first polarity charge layer is disposed between a first one of a plurality of passivation layers and a second one of the plurality of passivation layers disposed over the photodiode region.

Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 第一极性电荷层设置在多个钝化层中的第一个和设置在光电二极管区域上的多个钝化层中的第二钝化层之间。

公开(公告)号：US20140312918A1

公开(公告)日：2014-10-23

申请号：US13867979

申请日：2013-04-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dominic Massetti ,  Gang Chen

IPC: G06F7/58 ,  G01R29/26

CPC classification number: G06F7/582 ,  G01R29/26 ,  G06F7/588

Abstract: Techniques and mechanisms for generating a random number. In an embodiment, a first signal is received from a first cell including a first source follower transistor. Circuit logic detects for a pulse of the first signal and, in response to the pulse, generates a signal indicating detection of a first random telegraph noise event in the first source follower transistor. In another embodiment, a first count update is performed in response to the indicated detection of the first random telegraph noise event. The first count update is one basis for generation of a number corresponding to a plurality of random telegraph noise events.

Abstract translation: 用于生成随机数的技术和机制。 在一个实施例中，从包括第一源极跟随器晶体管的第一单元接收第一信号。 电路逻辑检测第一信号的脉冲，并且响应于脉冲，产生指示检测第一源极跟随器晶体管中的第一随机电报噪声事件的信号。 在另一实施例中，响应于所指示的第一随机电报噪声事件的检测，执行第一计数更新。 第一计数更新是生成与多个随机电报噪声事件相对应的数字的基础之一。

公开(公告)号：US20140299957A1

公开(公告)日：2014-10-09

申请号：US13858754

申请日：2013-04-08

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sing-Chung Hu ,  Dajiang Yang ,  Oray Orkun Cellek ,  Hsin-Chih Tai ,  Gang Chen

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/14643

Abstract: An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes.

Abstract translation: 图像传感器像素包括设置在半导体层中的一个或多个光电二极管。 像素电路设置在耦合到一个或多个光电二极管的半导体层中。 钝化层靠近半导体层设置在像素电路和一个或多个光电二极管的上方。 接触蚀刻停止层设置在钝化层上。 一个或多个金属触点通过接触蚀刻停止层耦合到像素电路。 在接触蚀刻停止层中限定一个或多个隔离区，其隔离接触蚀刻停止层材料，一个或多个金属接触通过该接触蚀刻停止层材料从一个或多个光电二极管耦合到像素电路。