WEAK-LENS COUPLING OF HIGH CURRENT ELECTRON SOURCES TO ELECTRON MICROSCOPE COLUMNS
    151.
    发明申请
    WEAK-LENS COUPLING OF HIGH CURRENT ELECTRON SOURCES TO ELECTRON MICROSCOPE COLUMNS 审中-公开
    高电流源的弱透镜耦合到电子显微镜柱

    公开(公告)号:US20110168888A1

    公开(公告)日:2011-07-14

    申请号:US12987803

    申请日:2011-01-10

    Abstract: A dynamic transmission electron microscope (DTEM) according to one embodiment includes an electron gun positioned at a top of a column for emitting electrons; an accelerator for accelerating the electrons; a C0 lens positioned below the accelerator for focusing greater than about 95% of the electrons exiting the accelerator; a drift space positioned below the C0 lens; a condenser lens system positioned below the drift space; and a camera chamber positioned below the condenser lens system, the camera chamber for housing a single electron sensitive camera. Additional systems and methods are also presented.

    Abstract translation: 根据一个实施例的动态透射电子显微镜(DTEM)包括位于用于发射电子的柱的顶部的电子枪; 用于加速电子的加速器; 位于加速器下方的用于聚焦大于约95%离开加速器的电子的C0透镜; 位于C0镜头下方的漂移空间; 位于漂移空间下方的聚光透镜系统; 以及位于聚光透镜系统下方的照相机室,用于容纳单个电子敏感照相机的相机室。 还介绍了其他系统和方法。

    Apparatus and method for inspecting sample surface
    152.
    发明授权
    Apparatus and method for inspecting sample surface 有权
    用于检查样品表面的装置和方法

    公开(公告)号:US07952071B2

    公开(公告)日:2011-05-31

    申请号:US12162071

    申请日:2007-01-24

    CPC classification number: H01J37/29 H01J37/045 H01J2237/2446

    Abstract: Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device.Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.

    Abstract translation: 提供了在半导体器件的制造工艺中使用的缺陷检查装置中,现有技术不能提供高精度的缺陷检查装置和检查(或评价)方法。 提供一种用投影型电子束检查装置检查样品表面的方法,包括以下步骤:通过由具有大致圆形或椭圆形的电子枪21产生的电子束在样品表面上形成这样的照射区域 尺寸大于样品表面上的图案; 将电子束基本上照射到样品表面上的图案的中心; 以及响应于用于检查样品表面的电子束的照射,从从样品表面发射的二次电子在检测器的电子检测平面上形成图像。

    Charged beam dump and particle attractor
    156.
    发明授权
    Charged beam dump and particle attractor 有权
    充电束流和吸引子

    公开(公告)号:US07547899B2

    公开(公告)日:2009-06-16

    申请号:US11445677

    申请日:2006-06-02

    Abstract: A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

    Abstract translation: 提供了一种用于减少离子注入期间污染的系统,方法和装置。 提供了位于离子源和终端之间的离子源,端站和质量分析器,其中离子束由离子源形成并通过质量分析器传送到终端站。 包括粒子收集器,颗粒吸引子和屏蔽的离子束转储组件与质量分析器相关联,其中,所述粒子吸引子的电位可操作以吸引和约束所述颗粒收集器内的污染颗粒,并且其中所述屏蔽件可操作为 屏蔽质子分析仪内离子束电位的吸引子的电位。

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