公开(公告)号：US20190019675A1

公开(公告)日：2019-01-17

申请号：US15874226

申请日：2018-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwook LEE ,  Sangwon KIM ,  Minsu SEOL ,  Seongjun PARK ,  Hyeonjin SHIN ,  Yunseong LEE ,  Seongjun JEONG ,  Alum JUNG

IPC: H01L21/033 ,  H01L21/311 ,  C01B32/194

Abstract: Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M-O—C bond or an M-C bond, where M is a metal element, O is oxygen, and C is carbon.

公开(公告)号：US20180149966A1

公开(公告)日：2018-05-31

申请号：US15807106

申请日：2017-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Hyunjae SONG ,  Seongjun PARK ,  Keunwook SHIN ,  Changseok LEE

IPC: G03F1/64 ,  G03F1/22 ,  G03F7/20

CPC classification number: G03F1/64 ,  G03F1/22 ,  G03F1/62 ,  G03F7/7015 ,  G03F7/70883

Abstract: A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane, and the pellicle membrane may include nanocrystalline graphene. The nanocrystalline graphene may have defects. The nanocrystalline graphene may include a plurality of nanoscale crystal grains, and the nanoscale crystal grains may include a two-dimensional (2D) carbon structure having an aromatic ring structure. The defects of the nanocrystalline graphene may include at least one of an sp3 carbon atom, an oxygen atom, a nitrogen atom, or a carbon vacancy.

公开(公告)号：US20170092592A1

公开(公告)日：2017-03-30

申请号：US15083827

申请日：2016-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Hyeonjin SHIN ,  Changhyun KIM ,  Changseok LEE ,  Seongjun PARK ,  Hyunjae SONG

IPC: H01L23/532 ,  H01L23/528

CPC classification number: H01L23/53276 ,  H01L23/485 ,  H01L23/5283

Abstract: A hybrid interconnect structure includes a graphene layer between a non-metallic material layer and a metal layer, and a first interfacial bonding layer between the non-metallic material layer and the graphene layer, or the metal layer and the graphene layer. The graphene layer connects the non-metallic material layer and the metal layer, and the first bonding layer includes a metallic material.

公开(公告)号：US20160351491A1

公开(公告)日：2016-12-01

申请号：US15052290

申请日：2016-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok LEE ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Seongjun PARK ,  Hyunjae SONG ,  Hyangsook LEE ,  Yeonchoo CHO

IPC: H01L23/528 ,  H01L27/06 ,  H01L23/532

CPC classification number: H01L27/0629 ,  H01L23/53271 ,  H01L27/101 ,  H01L27/228

Abstract: A wiring structure may include at least two conductive material layers and a two-dimensional layered material layer in an interface between the at least two conductive material layers. The two-dimensional layered material layer may include a grain expander layer which causes grain size of a conductive material layer which is on the two-dimensional layered material layer to be increased. Increased grain size may result in resistance of the second conductive material layer to be reduced. As a result, the total resistance of the wiring structure may be reduced. The two-dimensional layered material layer may contribute to reducing a total thickness of the wiring structure. Thus, a low-resistance and high-performance wiring structure without an increase in a thickness thereof may be implemented.

Abstract translation: 布线结构可以包括在至少两个导电材料层之间的界面中的至少两个导电材料层和二维层状材料层。 二维层状材料层可以包括使二维层状材料层上的导电性材料层的粒径增大的晶粒扩展层。 增加的晶粒尺寸可能导致第二导电材料层的电阻降低。 结果，可以减小布线结构的总电阻。 二维层状材料层可有助于减小布线结构的总厚度。 因此，可以实现不增加其厚度的低电阻和高性能布线结构。

公开(公告)号：US20160315326A1

公开(公告)日：2016-10-27

申请号：US15048142

申请日：2016-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK

IPC: H01M4/66 ,  H01M4/04 ,  H01M4/58 ,  H01M4/48 ,  H01M10/0525 ,  H01M4/38

CPC classification number: H01M4/663 ,  H01M4/0428 ,  H01M4/0471 ,  H01M4/133 ,  H01M4/386 ,  H01M4/387 ,  H01M4/48 ,  H01M4/5815 ,  H01M4/587 ,  H01M10/0525 ,  H01M2220/30

Abstract: Example embodiments relate to electrode materials, secondary batteries including the electrode materials, and methods of manufacturing the electrode materials and the secondary batteries. An electrode material may include a foam structure having a plurality of pores and a plurality of nanostructures disposed in the plurality of pores. The foam structure may include a graphene foam structure. The plurality of nanostructures may include at least one of a nanoparticle and a nanorod. The plurality of nanostructures may include a material capable of accommodating/discharging ions. The electrode material may be used as an anode material of a secondary battery.

Abstract translation: 示例性实施例涉及电极材料，包括电极材料的二次电池以及制造电极材料和二次电池的方法。 电极材料可以包括具有多个孔的泡沫结构和设置在多个孔中的多个纳米结构。 泡沫结构可以包括石墨烯泡沫结构。 多个纳米结构可以包括纳米颗粒和纳米棒中的至少一个。 多个纳米结构可以包括能够容纳/排出离子的材料。 电极材料可以用作二次电池的负极材料。

公开(公告)号：US20160190244A1

公开(公告)日：2016-06-30

申请号：US14728583

申请日：2015-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Hyeonjin SHIN ,  Jaeho LEE ,  Haeryong KIM

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/02568 ,  H01L21/0259 ,  H01L21/02628 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/413 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7839 ,  H01L29/786 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: An electronic device includes first and second electrodes that are spaced apart from each other and a 2D material layer. The 2D material layer connects the first and second electrodes. The 2D material layer includes a plurality of 2D nanomaterials. At least some of the 2D nanomaterials overlap one another.

Abstract translation: 电子设备包括彼此间隔开的第一和第二电极以及2D材料层。 2D材料层连接第一和第二电极。 2D材料层包括多个2D纳米材料。 至少一些2D纳米材料彼此重叠。

公开(公告)号：US20160155683A1

公开(公告)日：2016-06-02

申请号：US14955112

申请日：2015-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon KIM ,  Seunggeol NAM ,  Hyeonjin SHIN ,  Haeryong KIM ,  Seongjun PARK

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L24/14 ,  H01L23/3128 ,  H01L23/3731 ,  H01L23/4334 ,  H01L23/49816 ,  H01L2224/141 ,  H01L2224/16227 ,  H01L2924/15311 ,  H01L2924/18161

Abstract: A semiconductor package includes a semiconductor chip on a substrate, a thermal conductive film on a lower surface of the semiconductor chip, the thermal conductive film facing the substrate, and a molding member on the substrate and surrounding a sidewall of the semiconductor chip.

Abstract translation: 半导体封装包括：衬底上的半导体芯片，半导体芯片的下表面上的导热膜，与衬底相对的导热膜，以及在衬底上的模制构件，并且围绕半导体芯片的侧壁。

公开(公告)号：US20160011511A1

公开(公告)日：2016-01-14

申请号：US14791912

申请日：2015-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwon KIM ,  Seongjun PARK

IPC: G03F7/11 ,  G03F7/40

CPC classification number: G03F7/11 ,  C08G83/001 ,  C08K3/30 ,  C08K3/38 ,  C08K2003/3009 ,  C08K2003/385 ,  G03F7/094 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/47 ,  H01L21/47573

Abstract: A hardmask composition includes a first material including one of an aromatic ring-containing monomer and a polymer containing a repeating unit including an aromatic ring-containing monomer, a second material including at least one of a hexagonal boron nitride and a precursor thereof, a chalcogenide-based material and a precursor thereof, and a two-dimensional carbon nanostructure and a precursor thereof, the two-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen, and a solvent.

Abstract translation: 硬掩模组合物包括包含含芳环的单体和含有含芳环单体的重复单元的聚合物的第一材料，包含六方氮化硼及其前体中的至少一种的第二材料，硫族化物 的二氧化硅材料及其前体，二维碳纳米结构及其前体，含有约0.01原子％至约40原子％氧的二维碳纳米结构和溶剂。

公开(公告)号：US20150235959A1

公开(公告)日：2015-08-20

申请号：US14625282

申请日：2015-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok LEE ,  Hyeonjin SHIN ,  Seongjun PARK ,  Donghyun IM ,  Hyun PARK ,  Keunwook SHIN ,  Jongmyeong LEE ,  Hanjin LIM

IPC: H01L23/532 ,  H01L27/108

CPC classification number: H01L23/53276 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.

Abstract translation: 示例性实施例涉及布线结构，其形成方法和使用该布线结构的电子设备。 布线结构包括与金属层直接接触的第一导电材料层上的第一导电材料层和纳米晶体石墨烯层。