Abstract:
A charged-particle beam exposure apparatus includes a charged-particle beam source for emitting a charged-particle beam, an electrooptic system array which has a plurality of electron lenses and forms a plurality of intermediate images of the charged-particle beam source by the plurality of electron lenses, and a projection electrooptic system for projecting on a substrate the plurality of intermediate images formed by the electrooptic system array. The electrooptic system array includes at least two electrodes arranged along paths of a plurality of charged-particle beams, each of the at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode which is interposed between the at least two electrodes and has a plurality of shields corresponding to the respective paths of the plurality of charged-particle beams.
Abstract:
The invention pertains to a process for the production of particle beam systems (10-10″″, 12-12″), in which at least one first particle beam system (10-10″″) is produced on a first substrate (14) by computer-guided particle beam-induced deposition, and the minimum of one first particle beam system (10-10″″) is used to produce at least one second particle beam system (12-12″) on at least one second substrate (16) by computer-guided particle beam-induced deposition. The inventive process makes it possible to produce a large number of particle beam systems in a relatively short time.
Abstract:
A microcolumn including an assembly substrate and a plurality of beam modification components. The assembly substrate includes a plurality of sockets, and the beam modification components each include a connector coupled to a corresponding one of the sockets. Assembly of the beam modification components to the assembly substrate may employ automation and/or automated calibration, including automated motion of robotic stages in a substantially automated manner.
Abstract:
A semiconductor manufacturing factory includes a plurality of semiconductor manufacturing apparatuses including an exposure apparatus for exposing a substrate by using a plurality of charged particle beams, a local area network for connecting the plurality of semiconductor manufacturing apparatuses, and a gateway for connecting the local area network to an external network of the semiconductor manufacturing factory. The exposure apparatus includes a lens array, which has a plurality of lenses and directs a plurality of charged particle beams onto a substrate. The lens array includes at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode interposed between the at least two electrodes.
Abstract:
Provided is an electron beam lens for a micro-column electron beam apparatus and a method of manufacturing the same. A photosensitive glass substrate is used as a base isolation substrate and a thin metal film is grown by a plating method. Holes through which electron beam passes are formed by a lift off method after forming a resist pattern shaped as a hole on a seed metal layer and plating the thin metal film.
Abstract:
A solid state sub-nanometer-scale electron beam emitter comprising a multi-layered structure having a nano-tip electron emitter and tunnel emission junction formed on substrate, an initial electron beam extraction electrode, a “nano-sandwich Einzel” electrode, and a topmost protective layer.
Abstract:
This invention relates to an electron optical system array having a plurality of electron lenses. The electron optical system array includes a plurality of electrodes arranged along the paths of a plurality of charged-particle beams. Each of the plurality of electrodes has a membrane in which a plurality of apertures are formed on the paths of the plurality of charged-particle beams, and a support portion which supports the membrane. At least two of the plurality of electrodes are arranged to form a nested structure.
Abstract:
A high resolution and high data rate spot grid array printer system is provided, wherein an image representative of patterns to be recorded on a reticle or on a layer of a semiconductor die is formed by scanning a substrate with electron beams. Embodiments include a printer comprising an optical radiation source for irradiating a photon-electron converter with a plurality of substantially parallel optical beams, the optical beams being individually modulated to correspond to an image to be recorded on the substrate. The photon-electron converter produces an intermediate image composed of an array of electron beams corresponding to the modulated optical beams. A de-magnifier is interposed between the photon-electron converter and the substrate, for reducing the size of the intermediate image. A movable stage introduces a relative movement between the substrate and the photon-electron converter, such that the substrate is scanned by the electron beams.
Abstract:
There is provided a multi-charged beam lens constituted by stacking, via fiber chips serving as insulator members along the optical path of a charged beam, a plurality of electrodes having a charged beam passing region where a plurality of charged beam apertures are formed. The electrodes have shield apertures between the charged beam passing region and the fiber chips. A conductive shield extends through the shield apertures without contacting the electrodes, and cuts off a straight path which connects the charged beam passing region and the fiber chips serving as insulator members. This prevents the influence of charge-up of the insulator members on an electron beam in the multi-charged beam lens.
Abstract:
The invention is directed to an extremely low-capacitance device for shaping an electron beam. The device is based on a ceramic body having a monolithic multi-layer structure. The manufacture of the ceramic body ensues with the assistance of LTCC technology, whereby this method is designationally modified. The body is constructed of pre-sintered ceramic layers whose lateral shrinkage is suppressed. The through apertures of the electrodes for the electron beam are thus arranged exactly coaxially, and the tolerances of the electrode dimensions are decoupled from the shrinkage during sintering. The electron beam of an electron gun is focused and the intensity thereof is modulated with the assistance of such a device.