公开(公告)号：US20180341175A1

公开(公告)日：2018-11-29

申请号：US16055340

申请日：2018-08-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Hao Chen ,  Wei-Han Lai ,  Chien-Wei Wang ,  Chin-Hsiang Lin

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  H01L21/027 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  C07C381/12

CPC classification number: G03F7/0045 ,  C07C381/12 ,  C07D335/12 ,  C07D337/10 ,  C07D337/16 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/26 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274

Abstract: Resist materials having enhanced sensitivity to radiation are disclosed herein, along with methods for lithography patterning that implement such resist materials. An exemplary resist material includes a polymer, a sensitizer, and a photo-acid generator (PAG). The sensitizer is configured to generate a secondary radiation in response to the radiation. The PAG is configured to generate acid in response to the radiation and the secondary radiation. The PAG includes a sulfonium cation having a first phenyl ring and a second phenyl ring, where the first phenyl ring is chemically bonded to the second phenyl ring.

公开(公告)号：US10115585B2

公开(公告)日：2018-10-30

申请号：US15628261

申请日：2017-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: C08G77/16 ,  H01L21/02 ,  H01L21/308 ,  H01L21/033 ,  C08G77/52 ,  C08G77/00

Abstract: Provided is a material composition and method for that includes forming a silicon-based resin over a substrate. In various embodiments, the silicon-based resin includes a nitrobenzyl functional group. In some embodiments, a baking process is performed to cross-link the silicon-based resin. Thereafter, the cross-linked silicon-based resin is patterned and an underlying layer is etched using the patterned cross-linked silicon-based resin as an etch mask. In various examples, the cross-linked silicon-based resin is exposed to a radiation source, thereby de-cross-linking the silicon-based resin. In some embodiments, the de-cross-linked silicon-based resin is removed using an organic solution.

公开(公告)号：US10083832B1

公开(公告)日：2018-09-25

申请号：US15468109

申请日：2017-03-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Ming-Hui Weng

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  C09D201/06 ,  G03F7/11 ,  G03F7/16 ,  G03F7/09

Abstract: Under layer composition and methods of manufacturing semiconductor devices are disclosed. The method of manufacturing semiconductor device includes the following steps. A layer of an under layer composition is formed, wherein the under layer composition includes a polymeric material and a cross-linker, and the cross-linker includes at least one decomposable functional group. A curing process is performed on the layer of the under layer composition to form an under layer, wherein the cross-linker is crosslinked with the polymeric material to form a crosslinked polymeric material having the at least one decomposable functional group. A patterned photoresist layer is formed over the under layer. An etching process is performed to transfer a pattern of the patterned photoresist layer to the under layer. The under layer is removed by decomposing the decomposable functional group.

公开(公告)号：US10073347B1

公开(公告)日：2018-09-11

申请号：US15685908

申请日：2017-08-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/039 ,  G03F7/20 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  H01L21/67

CPC classification number: G03F7/2028 ,  G03F7/0392 ,  G03F7/162 ,  G03F7/38 ,  G03F7/40 ,  H01L21/02282 ,  H01L21/0274 ,  H01L21/6715

Abstract: The present disclosure provides a method that includes coating an edge portion of a wafer by a first chemical solution including a chemical mixture of an acid-labile group, a solubility control unit and a thermal acid generator; curing the first chemical solution to form a first protecting layer on the edge portion of the wafer; coating a resist layer on a front surface of the wafer; removing the first protecting layer by a first removing solution; and performing an exposing process to the resist layer.

公开(公告)号：US20180174828A1

公开(公告)日：2018-06-21

申请号：US15595525

申请日：2017-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/027 ,  H01L21/311

CPC classification number: C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/3081

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming an under layer on a substrate; forming a silicon-containing middle layer on the under layer, wherein the silicon-containing middle layer has a thermal base generator (TBG) composite; forming a photosensitive layer on the silicon-containing middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer, thereby forming a patterned photosensitive layer.

公开(公告)号：US20180173096A1

公开(公告)日：2018-06-21

申请号：US15617300

申请日：2017-06-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/038 ,  G03F7/16 ,  G03F7/004 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/0047 ,  G03F7/325

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

公开(公告)号：US12211698B2

公开(公告)日：2025-01-28

申请号：US16889448

申请日：2020-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/308 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027

Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.

公开(公告)号：US12181798B2

公开(公告)日：2024-12-31

申请号：US18446702

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/32 ,  G03F7/004 ,  G03F7/30 ,  G03F7/36

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

公开(公告)号：US11955338B2

公开(公告)日：2024-04-09

申请号：US18161662

申请日：2023-01-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Chun Huang ,  Ya-Wen Yeh ,  Chien-Wen Lai ,  Wei-Liang Lin ,  Ya Hui Chang ,  Yung-Sung Yen ,  Ru-Gun Liu ,  Chin-Hsiang Lin ,  Yu-Tien Shen

IPC: H01L21/033 ,  C23C16/04 ,  C23C16/458 ,  C23C16/50 ,  H01L21/02 ,  H01L21/266 ,  H01L21/308 ,  H01L21/3205

CPC classification number: H01L21/0337 ,  C23C16/042 ,  C23C16/4582 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/266 ,  H01L21/3086 ,  H01L21/32051

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

公开(公告)号：US11886121B2

公开(公告)日：2024-01-30

申请号：US16885077

申请日：2020-05-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Chih Ho ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/36 ,  H01L21/027

CPC classification number: G03F7/36 ,  H01L21/0274

Abstract: A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.