WAVELENGTH MULTIPLEXING DEVICE
    121.
    发明申请

    公开(公告)号:US20200292734A1

    公开(公告)日:2020-09-17

    申请号:US16888970

    申请日:2020-06-01

    Abstract: A wavelength multiplexing device is disclosed. When light is irradiated on a first longitudinal end region of a metal nano-structure, surface plasmon polaritons are generated in the first longitudinal end region. The surface plasmon polaritons and the light are coupled with each other to form first coupled surface plasmon polaritons, wherein the first coupled surface plasmon polaritons propagate along and on a surface of the metal nano-structure. When the first coupled surface plasmon polaritons reach a two-dimensional material layer, excitons are induced in the two-dimensional material layer, wherein the induced excitons and the first coupled surface plasmon polaritons are coupled with each other to form second coupled surface plasmon polaritons. The second coupled surface plasmon polaritons propagate along and on a surface of the metal nano-structure toward a second longitudinal end thereof.

    Wavelength multiplexing device
    122.
    发明授权

    公开(公告)号:US10712479B2

    公开(公告)日:2020-07-14

    申请号:US15455492

    申请日:2017-03-10

    Abstract: A wavelength multiplexing device is disclosed. When light is irradiated on a first longitudinal end region of a metal nano-structure, surface plasmon polaritons are generated in the first longitudinal end region. The surface plasmon polaritons and the light are coupled with each other to form first coupled surface plasmon polaritons, wherein the first coupled surface plasmon polaritons propagate along and on a surface of the metal nano-structure. When the first coupled surface plasmon polaritons reach a two-dimensional material layer, excitons are induced in the two-dimensional material layer, wherein the induced excitons and the first coupled surface plasmon polaritons are coupled with each other to form second coupled surface plasmon polaritons. The second coupled surface plasmon polaritons propagate along and on a surface of the metal nano-structure toward a second longitudinal end thereof.

    TOPOLOGICAL INSULATOR FORMED NEW SURFACE ELECTRONIC STATE AND THE PREPARATION METHOD THEREOF
    130.
    发明申请
    TOPOLOGICAL INSULATOR FORMED NEW SURFACE ELECTRONIC STATE AND THE PREPARATION METHOD THEREOF 审中-公开
    拓扑绝缘子形成新表面电子状态及其制备方法

    公开(公告)号:US20160111643A1

    公开(公告)日:2016-04-21

    申请号:US14886736

    申请日:2015-10-19

    CPC classification number: H01L49/006 B82Y10/00

    Abstract: The disclosure describes a topological insulator having a new surface electronic state and a preparation method thereof, and more particularly, to a topological insulator having a new surface electronic state, the topological insulator including a unimolecular metal layer formed on a 3D topological insulator, and a method of preparing a topological insulator having a new surface electronic state, the method including: heating and cooling at least one selected from the group consisting of tellurium (Te) and selenium (Se), and bismuth (Bi) to prepare an alloy; and forming a unimolecular metal layer on the alloy.

    Abstract translation: 本发明描述了具有新的表面电子状态的拓扑绝缘体及其制备方法,更具体地,涉及具有新的表面电子状态的拓扑绝缘体,所述拓扑绝缘体包括形成在3D拓扑绝缘体上的单分子金属层,以及 制备具有新的表面电子状态的拓扑绝缘体的方法,该方法包括:加热和冷却选自碲(Te)和硒(Se)和铋(Bi)中的至少一种以制备合金; 并在合金上形成单分子金属层。

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