公开(公告)号：US10712005B2

公开(公告)日：2020-07-14

申请号：US15650400

申请日：2017-07-14

申请人： GOODRICH CORPORATION

发明人： Ying She ,  Naveen G. Menon ,  Zissis A. Dardas ,  Thomas P. Filburn

IPC分类号： F23R3/00 ,  C04B35/80 ,  C04B35/83 ,  C04B35/565 ,  C23C16/44 ,  C23C16/04 ,  C23C16/32 ,  C04B111/00

摘要： A method of manufacturing a ceramic matrix composite component may include introducing a gaseous precursor into an inlet portion of a chamber that houses a porous preform and introducing a gaseous mitigation agent into an outlet portion of the chamber that is downstream of the inlet portion of the chamber. The gaseous precursor may include methyltrichlorosilane (MTS) and the gaseous mitigation agent may include hydrogen gas. The introduction of the gaseous precursor may result in densification of the porous preform(s) and the introduction of the gaseous mitigation agent may shift the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits, which can accumulate in an exhaust conduit 340 of the system.

公开(公告)号：US20200149189A1

公开(公告)日：2020-05-14

申请号：US16743476

申请日：2020-01-15

申请人： Shin-Etsu Chemical Co., Ltd. ,  CUSIC INC.

发明人： Yoshihiro Kubota ,  Shoji Akiyama ,  Hiroyuki Nagasawa

IPC分类号： C30B33/06 ,  H01L29/16 ,  H01L29/06 ,  H01L21/02 ,  C30B29/36 ,  C30B25/18 ,  C23C16/32 ,  C23C16/01 ,  H01L21/18 ,  H01L21/304 ,  H01L21/762 ,  C23C16/42 ,  H01L21/265

摘要： Provided is an SiC composite substrate 10 having a monocrystalline SiC layer 12 on a polycrystalline SiC substrate 11, wherein: some or all of the interface at which the polycrystalline SiC substrate 11 and the monocrystalline SiC layer 12 are in contact is an unmatched interface I12/11 that is not lattice-matched; the monocrystalline SiC layer 12 has a smooth obverse surface and has, on the side of the interface with the polycrystalline SiC substrate 11, a surface that has more pronounced depressions and projections than the obverse surface; and the close-packed plane (lattice plane 11p) of the crystals of the polycrystalline SiC in the polycrystalline SiC substrate 11 is randomly oriented with reference to the direction of a normal to the obverse surface of the monocrystalline SiC layer 12. The present invention improves the adhesion between the polycrystalline SiC substrate and the monocrystalline SiC layer.

公开(公告)号：US10600637B2

公开(公告)日：2020-03-24

申请号：US15588026

申请日：2017-05-05

申请人： ASM IP Holding B.V.

发明人： Toshiya Suzuki ,  Viljami J. Pore ,  Hannu Huotari

IPC分类号： C23C16/30 ,  C23C16/455 ,  H01L21/02 ,  C23C16/32 ,  C23C16/40 ,  C23C16/44

摘要： Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.

公开(公告)号：US10597781B2

公开(公告)日：2020-03-24

申请号：US16081660

申请日：2017-03-02

申请人： PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERRATION FOUNDATION

发明人： Hee Soo Lee ,  Seol Jeon ,  Ji Seung Ryu ,  Bu Young Kim ,  Seung Hyeon Jo ,  Eun Pyo Hong ,  Yang Do Kim ,  Hyun Jo Yoo

IPC分类号： C21D1/09 ,  C23C14/06 ,  C23C16/32 ,  C23C16/36 ,  C23C16/515 ,  C23C28/00 ,  C23C8/64 ,  B32B27/14 ,  C23C8/66 ,  C23C14/35 ,  C23C14/58 ,  C23C28/04 ,  B26D1/00 ,  C23C16/34 ,  C23C30/00 ,  B62D1/00

摘要： The present disclosure relates to a method for producing a coating film having high heat resistance, high hardness and wear resistance, a coating film having high heat-resistance, high hardness and wear resistance produced using the method, and a cutting tool including the same. The method includes forming a metal nitride layer on a metal base; forming a carbon layer on the metal nitride layer; and irradiating a laser into the carbon layer to add carbons into a portion of the metal nitride layer, thereby to form a carburized layer.

公开(公告)号：US20200071825A1

公开(公告)日：2020-03-05

申请号：US16550523

申请日：2019-08-26

申请人： Applied Materials, Inc.

发明人： Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Mark Saly ,  David Thompson ,  Yongjing Lin ,  Shih Chung Chen

IPC分类号： C23C16/455 ,  C23C16/32 ,  C23C28/00

摘要： Methods of depositing a metal carbide film by exposing a substrate surface to a halide precursor and an aluminum reactant are described. The halide precursor comprises a compound of general formula (I) MXyRn, wherein M is a metal, X is a halogen selected from Cl, Br, F or I, y is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and n is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) Al(CH2AR1R2R3)3, wherein A is C, Si, or Ge, each of R1, R2, and R3 is independently alkyl or comprises substantially no β-hydrogen.

公开(公告)号：US10522386B2

公开(公告)日：2019-12-31

申请号：US15321421

申请日：2015-06-01

申请人： TOYO TANSO CO., LTD.

发明人： Masato Shinohara ,  Yoshihisa Abe ,  Satoru Nogami

IPC分类号： B23Q3/00 ,  H01L21/687 ,  C23C16/04 ,  C23C16/458 ,  C23C16/56 ,  H01L21/205 ,  C23C8/20 ,  C23C16/06 ,  C23C16/32 ,  C30B25/12

摘要： Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a bottom surface (11a) and a side surface (11b) of the recess (11), and a silicon carbide layer (20) formed on a surface of the base material (10) except for the recess (11).

公开(公告)号：US10508362B2

公开(公告)日：2019-12-17

申请号：US15358543

申请日：2016-11-22

申请人： Mitsubishi Electric Corporation

发明人： Kenichi Hamano ,  Hiroaki Sumitani

IPC分类号： C23C14/50 ,  C30B23/02 ,  C30B29/36 ,  C23C16/32 ,  C23C16/44 ,  C23C16/458 ,  C30B35/00

摘要： A substrate mounting member according to the present invention is a member for mounting a SiC substrate for epitaxial growth, which includes a wafer plate including a SiC polycrystal, and a supporting plate configured to be placed on the wafer plate, include no SiC polycrystal and have a surface serving as a SiC substrate placing surface, the surface being on the side opposite to a surface in contact with the wafer plate, and in which a thickness h [mm] of the supporting plate satisfies an expression h4≤3 pa4(1−v2){(5+v)/(1+v)}/16E when a force applied to a unit area of the supporting plate by a self-weight of the supporting plate and by the SiC substrate is represented as p [N/mm2], a radius of the supporting plate as a [mm], a Poisson's ratio as v and a Young's modulus as E [MPa].

公开(公告)号：US10483079B2

公开(公告)日：2019-11-19

申请号：US15361186

申请日：2016-11-25

申请人： HS Folis Oy

发明人： Pekka Torma ,  Heikki Johannes Sipila

IPC分类号： H01J35/18 ,  H01J5/18 ,  B23K1/00 ,  B23K35/26 ,  C23C14/06 ,  C23C14/28 ,  C23C14/34 ,  C23C14/58 ,  C23C16/32 ,  C23C16/50 ,  C23C16/56 ,  C23C28/00 ,  H01L31/18 ,  H01L31/08

摘要： For manufacturing a radiation window for an X-ray measurement apparatus, an etch stop layer is first produced on a polished surface of a carrier. A thin film deposition technique is used to produce a boron carbide layer on an opposite side of the etch stop layer than the carrier. The combined structure including the carrier, the etch stop layer, and the boron carbide layer is attached to a region around an opening in a support structure with the boron carbide layer facing the support structure. The middle area of carrier is etched away, leaving an additional support structure.

公开(公告)号：US10435790B2

公开(公告)日：2019-10-08

申请号：US15340512

申请日：2016-11-01

申请人： ASM IP Holding B.V.

发明人： Atsuki Fukazawa ,  Masaru Zaitsu ,  Masaki Tokunaga ,  Hideaki Fukuda

IPC分类号： C23C16/505 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/52 ,  C23C16/04

摘要： A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric PEALD includes: supplying a precursor in a pulse to the reaction chamber; continuously supplying a reactant to the reaction chamber; continuously supplying an inert gas to the reaction chamber; continuously controlling a pressure of the reaction chamber in a range of 15 kPa to 80 kPa; and applying RF power for glow discharge in a pulse to one of the parallel plate electrodes.

公开(公告)号：US10418243B2

公开(公告)日：2019-09-17

申请号：US15233351

申请日：2016-08-10

申请人： Applied Materials, Inc.

发明人： Prashant Kumar Kulshreshtha ,  Ziqing Duan ,  Karthik Thimmavajjula Narasimha ,  Kwangduk Douglas Lee ,  Bok Hoen Kim

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

摘要： Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.