公开(公告)号：US09620327B2

公开(公告)日：2017-04-11

申请号：US14978776

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner

IPC: H01J37/00 ,  H01J37/141 ,  H01J37/08 ,  H01J37/317 ,  H01J37/147

CPC classification number: H01J37/141 ,  H01J37/05 ,  H01J37/08 ,  H01J37/1472 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/04922 ,  H01J2237/1415 ,  H01J2237/152

Abstract: A combined scanning and focusing magnet for an ion implantation system is provided. The combined scanning and focusing magnet has a yoke having a high magnetic permeability. The yoke defines a hole configured to pass an ion beam therethrough. One or more scanner coils operably are coupled to the yoke and configured to generate a time-varying predominantly dipole magnetic field when electrically coupled to a power supply. One or more focusing coils are operably coupled to the yoke and configured to generate a predominantly multipole magnetic field, wherein the predominantly multipole magnetic field is one of static or time-varying.

公开(公告)号：US20170040141A1

公开(公告)日：2017-02-09

申请号：US14817893

申请日：2015-08-04

Applicant: Axcelis Technologies, Inc.

Inventor： Armin Huseinovic ,  Joseph Ferrara ,  Brian Terry

IPC: H01J37/20 ,  H01J37/18 ,  H01L21/683 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01J37/185 ,  H01J37/3171 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/31705 ,  H01L21/26593 ,  H01L21/67109 ,  H01L21/67213 ,  H01L21/6831

Abstract: An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. An isolation chamber is coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve selectively isolates the pre-implant cooling environment from the process environment wherein the isolation chamber comprises a pre-implant cooling workpiece support for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece. A workpiece transfer arm transfer the workpiece between the load lock chamber, isolation chamber, and chuck. A controller controls the workpiece transfer arm selectively cools the workpiece to a pre-implant cooling temperature in the isolation chamber at the pre-implant cooling pressure via a control of the isolation gate valve, pre-implant cooling workpiece support, and pressurized gas source.

Abstract translation: 离子注入系统具有处理室，其具有工艺环境，以及离子注入装置，被配置为将离子注入到由处理室内的卡盘支撑的工件中。 加载锁定室将工艺（真空）环境与大气环境隔离，其中负载锁定工件支撑件支撑其中的工件。 隔离室通过在其中限定的植入前冷却环境耦合到处理室。 隔离闸阀选择性地将植入前冷却环境与过程环境隔离，其中隔离室包括用于支撑和冷却工件的植入物前冷却工件支撑件。 隔离闸阀是工件进出隔离室的唯一进入路径。 加压气体选择性地将植入物前冷却环境加压到大于工艺压力的植入前冷却压力，以便于快速冷却工件。 工件传送臂在加载锁定室，隔离室和卡盘之间传送工件。 控制器控制工件传送臂通过隔离闸阀，预植入物冷却工件支撑件和加压气体源的控制，以预植入物冷却压力选择性地将工件冷却至隔离室中的植入前冷却温度。

公开(公告)号：US09502207B1

公开(公告)日：2016-11-22

申请号：US14835780

申请日：2015-08-26

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett ,  Jason R. Beringer

IPC: H01J37/20 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/08 ,  H01J3/04 ,  H01J2237/061 ,  H01J2237/31701

Abstract: An ion source filament clamp has a clamp member having first and second ends. The first end has one of a cam surface and a cam follower, and has first and second portions that are opposed to one another and separated by a slot having a lead opening defined therein to receive a lead of an ion source filament. An actuator pin extends along an actuator pin axis and has first and second sections. The first section is coupled to the first portion of the clamp member. The actuator pin extends through, and is in sliding engagement with, a thru-hole in the second portion of the clamp member. A cam member is operably coupled to the second section of the actuator pin. The cam member has a handle and the other of the cam surface and cam follower and is configured to rotate between a clamped position and an unclamped position. The cam follower slidingly contacts the cam surface. In the clamped position, the cam follower engages the cam surface in a first predetermined manner, thus selectively compressing the first and second portions of the clamp member toward one another and exerting a clamping pressure on the lead within the lead opening while inducing a spring tension between the first and second portions of the clamp member. In the unclamped position, the cam follower engages the cam surface in a second predetermined manner, wherein the spring tension extends the first and second portions of the clamp member apart from one another, therein releasing the clamping pressure on the lead within the lead opening.

Abstract translation: 离子源灯丝夹具具有一个具有第一和第二端的夹紧件。 第一端具有凸轮表面和凸轮从动件中的一个，并且具有彼此相对并且由其中限定有引线开口的槽分隔开的第一和第二部分，以接收离子源灯丝的引线。 执行器销沿致动器销轴线延伸并具有第一和第二部分。 第一部分联接到夹紧构件的第一部分。 致动器销延伸穿过并且与夹紧构件的第二部分中的通孔滑动接合。 凸轮构件可操作地联接到致动器销的第二部分。 凸轮构件具有手柄和凸轮表面和凸轮从动件中的另一个，并且构造成在夹紧位置和未夹紧位置之间旋转。 凸轮从动件滑动地接触凸轮表面。 在夹紧位置中，凸轮从动件以第一预定方式接合凸轮表面，从而选择性地将夹紧构件的第一和第二部分彼此压缩并且在引导开口内的引线上施加夹紧压力，同时引起弹簧张力 在夹紧构件的第一和第二部分之间。 在松开位置，凸轮从动件以第二预定方式接合凸轮表面，其中弹簧张力将夹紧构件的第一和第二部分彼此分开延伸，从而在引线开口内释放引线上的夹持压力。

公开(公告)号：US20160175804A1

公开(公告)日：2016-06-23

申请号：US14576549

申请日：2014-12-19

Applicant: Axcelis Technologies, Inc.

Inventor： William Davis Lee ,  William DiVergilio ,  Daniel R. Tieger

IPC: B01J19/12 ,  H01J37/08 ,  C01B35/02 ,  H01J37/317

CPC classification number: C01B35/026 ,  B01J19/121 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/2001

Abstract: Systems and methods for the production of laser induced high mass molecular borane is disclosed for an ion implantation system. The system comprises a laser, a diborane gas source, a heated interaction chamber for generating a high mass molecular borane, a transport system for transferring the high mass molecular borane, and an ion source chamber for generating an ion beam in an ion beam path for implantation of a workpiece. The transport system comprises at least a first and a second flow control component at least a first heated chamber, wherein the first heated chamber is disposed between the first and second flow control components, and wherein the first heated chamber is configured to condense the high mass molecular borane. The laser comprises a CO2 laser configured to irradiate the diborane source gas at a wavelength of about 10.6 μm at a R-16 (973 cm−1) line of excitation.

Abstract translation: 公开了用于离子注入系统的用于生产激光诱导的高质量分子量硼烷的系统和方法。 该系统包括激光器，乙硼烷气体源，用于产生高质量分子量硼烷的加热相互作用室，用于转移高质量分子量硼烷的输送系统和用于在离子束路径中产生离子束的离子源室， 植入工件。 输送系统至少包括第一和第二流量控制部件至少第一加热室，其中第一加热室设置在第一和第二流量控制部件之间，并且其中第一加热室被配置为冷凝高质量 分子硼烷。 激光器包括配置成在R-16（973cm-1）激发线处照射约10.6μm波长的乙硼烷源气体的CO 2激光器。

公开(公告)号：US20150380285A1

公开(公告)日：2015-12-31

申请号：US14317778

申请日：2014-06-27

Applicant: Axcelis Technologies, Inc.

Inventor： Armin Huseinovic ,  Joseph Ferrara ,  Brian Terry

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/265

CPC classification number: H01L21/67201 ,  H01J37/185 ,  H01J37/20 ,  H01J37/3171 ,  H01L21/265 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67161 ,  H01L21/67213 ,  H01L21/67712

Abstract: An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers. A controller is configured to heat the workpiece to the first temperature in an atmospheric environment via the pre-heat apparatus, to heat the workpiece to the second temperature via the thermal chuck, to implant ions into the workpiece via the ion implantation apparatus, and to transfer the workpiece between atmospheric and vacuum environments via a control of the pre-heat apparatus, post-cool apparatus, pump, vent, and thermal chuck.

Abstract translation: 离子注入系统具有耦合到第一和第二双负载锁定组件的离子注入装置，每个具有由公共壁分隔的相应的第一和第二室。 每个第一室具有构造成将工件加热到第一温度的预热装置。 每个第二腔室具有后冷却装置，其被配置为将工件冷却至第二温度。 热卡盘将工件保持在用于离子注入的处理室中，并且热卡盘构造成将工件加热到第三温度。 泵和排气口与第一和第二室选择性地流体连通。 控制器被配置为经由预热装置在大气环境中将工件加热到第一温度，以经由热卡盘将工件加热到第二温度，以通过离子注入装置将离子注入工件，并且 通过预热装置，后冷却装置，泵，通风口和热卡盘的控制在大气和真空环境之间传送工件。

公开(公告)号：US09218941B2

公开(公告)日：2015-12-22

申请号：US14584252

申请日：2014-12-29

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Marvin Farley

IPC: G21K5/10 ,  H01J37/08 ,  H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/047 ,  H01J2237/24514 ,  H01J2237/30483

Abstract: An ion implantation system and method for implanting ions at varying energies across a workpiece is provided. The system comprises an ion source configured to ionize a dopant gas into a plurality of ions and to form an ion beam. A mass analyzer is positioned downstream of the ion source and configured to mass analyze the ion beam. A deceleration/acceleration stage is positioned downstream of the mass analyzer. An energy filter may form part of the deceleration/acceleration stage or may positioned downstream of the deceleration/acceleration stage. An end station is provided having a workpiece support associated therewith for positioning the workpiece before the ion beam is also provided. A scanning apparatus is configured to scan one or more of the ion beam and workpiece support with respect to one another. One or more power sources are operably coupled to one or more of the ion source, mass analyzer, deceleration/acceleration stage, and energy filter. A controller is configured to selectively vary one or more voltages respectively supplied to one or more of the deceleration/acceleration stage and the energy filter concurrent with the scanning of the ion beam and/or workpiece support, wherein the selective variation of the one or more voltages is based, at least in part, on a position of the ion beam with respect to the workpiece support.

Abstract translation: 提供了一种用于在工件上以不同能量注入离子的离子注入系统和方法。 该系统包括被配置为将掺杂剂气体离子化成多个离子并形成离子束的离子源。 质量分析器位于离子源的下游并且被配置成质量分析离子束。 减速/加速阶段位于质量分析仪的下游。 能量过滤器可以形成减速/加速阶段的一部分，或者可以位于减速/加速阶段的下游。 设置终端站，其具有与其相关联的工件支撑件，用于在还提供离子束之前定位工件。 扫描装置被配置为相对于彼此扫描一个或多个离子束和工件支撑件。 一个或多个电源可操作地耦合到离子源，质量分析器，减速/加速阶段和能量过滤器中的一个或多个。 控制器被配置为选择性地改变与扫描离子束和/或工件支撑件同时提供给减速/加速阶段和能量过滤器中的一个或多个的一个或多个电压，其中一个或多个 电压至少部分地基于离子束相对于工件支撑件的位置。

公开(公告)号：US20150318142A1

公开(公告)日：2015-11-05

申请号：US14692395

申请日：2015-04-21

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  William Bintz

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/20

CPC classification number: H01J37/1474 ,  H01J37/1478 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/1506 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/31701 ,  H01J2237/31708

Abstract: An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.

Abstract translation: 提供离子注入系统和方法，用于与扫描的离子束同时冲击工件，改变扫描离子束相对于工件的入射角。 该系统具有构造成形成离子束的离子源和被配置为质量分析离子束的质量分析器。 离子束扫描器被配置成沿着第一方向扫描离子束，其中限定扫描的离子束。 工件支撑件构造成在其上支撑工件，并且角度注入装置被配置为改变扫描离子束相对于工件的入射角。 角植入装置包括角度能量过滤器和可操作地耦合到工件支撑件的机械装置中的一个或多个，其中控制器控制角度注入装置，从而改变扫描离子束相对于工件的入射角度，同时与 扫描的离子束撞击工件。

公开(公告)号：US09111719B1

公开(公告)日：2015-08-18

申请号：US14168770

申请日：2014-01-30

Applicant: Axcelis Technologies, Inc.

Inventor： Shu Satoh

IPC: H01J37/304 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/24535 ,  H01J2237/30483

Abstract: A dosimetry system and method are provided for increasing utilization of an ion beam, wherein one or more side Faraday cups are positioned along a path of the ion beam and configured to sense a current thereof. The one or more side Faraday cups are separated by a distance associated with a diameter of the workpiece. The ion beam reciprocally scans across the workpiece, interlacing narrow scans and wide scans, wherein narrow scans are defined by reversing direction of the scanning near an edge of the workpiece, and wide scans are defined by reversing direction of the scanning at a position associated with an outboard region of the side Faraday cups. A beam current is sensed by the side Faraday cups concurrent with scanning the beam, wherein the side Faraday cups are connected to a dosimeter only concurrent with a wide scan of the ion beam, and are disconnected concurrent with narrow scans of the ion beam. The side Faraday cups are further connected to ground concurrent with narrow scans of the ion beam.

Abstract translation: 提供了一种用于增加离子束利用率的剂量测定系统和方法，其中一个或多个侧法拉第杯沿着离子束的路径定位并被配置为感测其电流。 一个或多个侧法拉第杯分开与工件直径相关联的距离。 离子束往复扫描穿过工件，交织窄扫描和宽扫描，其中窄扫描是通过在工件边缘附近反转扫描方向来定义的，并且宽扫描是通过在与 侧法拉第杯的外侧区域。 通过侧法拉第杯同时扫描光束来检测光束电流，其中侧法拉第杯连接到剂量计，仅与离子束的宽扫描并发，并与离子束的窄扫描同时断开。 侧法拉第杯进一步连接到地面同时与离子束的窄扫描。

公开(公告)号：US08653486B2

公开(公告)日：2014-02-18

申请号：US13713251

申请日：2012-12-13

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner

IPC: H01J37/317 ,  H01J37/10

CPC classification number: H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract translation: 本发明涉及一种用于在离子束在工件的表面上扫描时改变离子束截面形状的方法和装置，以产生具有改进的离子束电流分布均匀性的时间平均离子束 。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：US20040262542A1

公开(公告)日：2004-12-30

申请号：US10894209

申请日：2004-07-19

Applicant: Axcelis Technologies, Inc.

Inventor： Robert D. Rathmell ,  Victor M. Benveniste

IPC: G21G005/00 ,  G21K005/10

CPC classification number: H01J37/12 ,  H01J37/3171

Abstract: A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends across a width of the ion beam for deflecting ions entering the lens structure. The lens structure includes a first electrode for decelerating ions and a second electrode for accelerating the ions. A lens structure mode controller selectively activates either the accelerating or decelerating electrode to to cause ions entering the lens structure to exit said lens structure with a desired trajectory regardless of the trajectory ions enter the lens structure.