Abstract:
A scanning tunnel-current-detecting device comprising at least two probe electrodes supported by a supporting member, a means for placing a sample in proximity to the probe electrodes, a means for applying voltage between the probe electrodes and the sample, at least one of the probe electrodes being provided with a mechanism for measuring and compensating variation of the distance between the supporting member and the sample, is provided.
Abstract:
This invention is an enhanced probe positioning technique for Scanning Tunneling Microscopes, Atomic Force Microscopes, and other scanning probe microscopes. The invention has particular application for drift compensation. The invention adds a controllable motion to the probe that is totally independent of the scanning or other probe positioning. If the drift velocity is known, the invention can be used to compensate for the drift. In addition, several implementations are shown for measuring drift velocity. One method has the operator identify a significant feature of the acquired image on separate frames of data. The shift of this pattern or feature, along with the time between frames, can be used to calculate the drift velocity. Two methods are described that utilize the frequency shift of the image spatial spectrum due to the effect of the drift velocity on bi-directional scans. Another method is described that derives drift velocity and direction from the correlation of separate frames of data. The invention can also be used to compensate for predicted drift, such as the drift after a scan area offset.
Abstract:
A grid plate encoder based positioning system (1) for positioning of an element is provided, the positioning system (1) comprises
a grid plate (2) with a grid plate surface (21); an encoder unit (3) with one or more optical sensors (31) for sensing a grid plate surface pattern (23) of the grid plate surface (21); an input (7) to receive coordinates (Xd, Yd) specifying a desired position of the element; a mapping unit (8) to compute compensated coordinate data (Xa, Ya) corresponding to estimated position data expected from the encoder unit (3) when the element is positioned at a desired position (Xd, Yd) specified by the setpoint coordinates; a feedback control unit (9) providing the compensated coordinate data (Xa, Ya) as a setpoint (Xs, Ys) to a positioning unit (12), with feedback control based on the estimated position data obtained from the encoder unit.
Additionally, a grid plate encoder based positioning method and a method for computing compensation data are provided.
Abstract:
A method for predicting manufacturing variation is disclosed. The method may include measuring corresponding physical characteristics of multiple semiconductor features on multiple wafers produced using a semiconductor manufacturing process, and estimating a mean and a variance using the corresponding physical characteristics. The method may further include predicting manufacturing variation of the semiconductor manufacturing process using the mean and the variance, controlling the semiconductor manufacturing process using the predicted manufacturing variation, or determining a disposition of at least one of the multiple wafers.
Abstract:
The method for detecting mechanical and magnetic features comprises the steps of: aiming a probe of the sensor at a sample; defining several detected points for detection on the sample; detecting one of points and comprising the steps of: approaching the probe to the detected point from a predetermined height; contacting the probe with the detected point and applying a predetermined force on the detected point; making the probe far away from the detected point until to the predetermined height; shifting the probe to the next point for detection and repeating the detection; collecting the data of each of the detected points while the probe rapidly approaches to the points from the predetermined height; using a signal decomposition algorithm to transform the collected data to a plurality of data groups; and choosing a part of the data groups to be as data of feature distributions of the sample.
Abstract:
Systems and methods are disclosed that remove noise from roughness measurements to determine roughness of a feature in a pattern structure. In one embodiment, a method for determining roughness of a feature in a pattern structure includes generating, using an imaging device, a set of one or more images, each including measured linescan information that includes noise. The method also includes detecting edges of the features within the pattern structure of each image without filtering the images, generating a biased power spectral density (PSD) dataset representing feature geometry information corresponding to the edge detection measurements, evaluating a high-frequency portion of the biased PSD dataset to determine a noise model for predicting noise over all frequencies of the biased PSD dataset, and subtracting the noise predicted by the determined noise model from a biased roughness measure to obtain an unbiased roughness measure.
Abstract:
Systems and methods are disclosed that remove noise from roughness measurements to determine roughness of a feature in a pattern structure. In one embodiment, a method for determining roughness of a feature in a pattern structure includes generating, using an imaging device, a set of one or more images, each including measured linescan information that includes noise. The method also includes detecting edges of the features within the pattern structure of each image without filtering the images, generating a biased power spectral density (PSD) dataset representing feature geometry information corresponding to the edge detection measurements, evaluating a high-frequency portion of the biased PSD dataset to determine a noise model for predicting noise over all frequencies of the biased PSD dataset, and subtracting the noise predicted by the determined noise model from a biased roughness measure to obtain an unbiased roughness measure.
Abstract:
A method of adjusting a critical dimension of a reticle patterns in a reticle used to fabricate semiconductor devices can include determining respective values for a critical dimension of a plurality of reticle patterns in an image of the reticle and providing an atmospheric plasma to a first reticle pattern included in the plurality of reticle patterns, the first reticle pattern having a first value for the critical dimension that is different than a target value for the critical dimension. The atmospheric plasma may not be provided to second reticle patterns included in the plurality of reticle patterns, the second reticle patterns having a second value for the critical dimension that is about equal to the target value.
Abstract:
The present invention relates to apparatuses and methods for examining a surface of a test object, such as e.g. a lithography mask. In accordance with one aspect of the invention, an apparatus for examining a surface of a mask comprises a probe which interacts with the surface of the mask, and a measuring apparatus for establishing a reference distance of the mask from a reference point, wherein the measuring apparatus measures the reference distance of the mask in a measurement region of the mask which is not arranged on the surface of the mask.
Abstract:
A method of compensating for an artifact in data collected using a standard atomic force microscope (AFM) operating in an oscillating mode. The artifact is caused by deflection of the probe not related to actual probe-sample interaction and the method includes compensating for thermal induced bending of the probe of the AFM by measuring a DC component of the measured deflection. The DC component of deflection is identified by calibrating the optical deflection detection apparatus and monitoring movement of the mean deflection, thereby allowing the preferred embodiments to minimize the adverse effect due to the artifact. Notably, plotting the DC deflection profile yields a corresponding temperature profile of the sample.