METHOD FOR COPPER PLATING THROUGH SILICON VIAS USING WET WAFER BACK CONTACT
    91.
    发明申请
    METHOD FOR COPPER PLATING THROUGH SILICON VIAS USING WET WAFER BACK CONTACT 审中-公开
    通过使用湿式回焊接铜硅铜的方法

    公开(公告)号:US20160133515A1

    公开(公告)日:2016-05-12

    申请号:US14896854

    申请日:2014-05-27

    Abstract: A method and apparatus for processing a substrate are provided. In some implementations, the method comprises providing a silicon substrate having an aperture containing an exposed silicon contact surface at a bottom of the aperture, depositing a metal seed layer on the exposed silicon contact surface and exposing the substrate to an electroplating process by flowing a current through a backside of the substrate to form a metal layer on the metal seed layer.

    Abstract translation: 提供了一种用于处理衬底的方法和设备。 在一些实施方式中,该方法包括提供硅衬底,该硅衬底具有在孔的底部包含暴露的硅接触表面的孔,在暴露的硅接触表面上沉积金属晶种层,并通过流过电流来将衬底暴露于电镀工艺 通过衬底的背面以在金属种子层上形成金属层。

    Additives for producing copper electrodeposits having low oxygen content
    92.
    发明授权
    Additives for producing copper electrodeposits having low oxygen content 有权
    用于生产氧含量低的铜电沉积物的添加剂

    公开(公告)号:US09243339B2

    公开(公告)日:2016-01-26

    申请号:US13480887

    申请日:2012-05-25

    Applicant: Trevor Pearson

    Inventor: Trevor Pearson

    CPC classification number: C25D1/04 C25D3/38 C25D3/40 C25D21/04

    Abstract: A copper electroplating bath for producing copper electrodeposits is described. The copper electroplating bath comprises (a) a soluble copper salt, (b) an electrolyte comprising one or more acids, and (c) a grain refining additive comprising an alkyl, aryl or alkylaryl diamine. The copper electroplating bath can be used for producing electroformed copper deposits having low oxygen content.

    Abstract translation: 描述了用于生产铜电沉积物的铜电镀浴。 铜电镀浴包括(a)可溶性铜盐,(b)包含一种或多种酸的电解质,和(c)包含烷基,芳基或烷基芳基二胺的晶粒细化添加剂。 铜电镀浴可用于生产氧含量低的电铸铜矿床。

    METHODS FOR FABRICATING THIN FILM SOLAR CELLS
    95.
    发明申请
    METHODS FOR FABRICATING THIN FILM SOLAR CELLS 审中-公开
    薄膜太阳能电池的制备方法

    公开(公告)号:US20130230933A1

    公开(公告)日:2013-09-05

    申请号:US13849678

    申请日:2013-03-25

    Applicant: Delin Li

    Inventor: Delin Li

    Abstract: A method for fabricating a thin-film solar cell. The method includes rolling a flexible substrate prepared with a metalized surface out of a roll to move linearly with a speed. The method further includes forming a back-electrode film overlying the metalized surface moving with the speed. Additionally, the method includes forming a stack of films comprising at least copper, gallium, and indium overlying the back-electrode film and forming a Se-alloy layer overlying the stack of films. Furthermore, the method includes depositing a Se—Na bearing film overlying the Se-alloy layer from a vacuum evaporator having at least two sources. Moreover, the method includes performing a thickness measurement in real time for the back-electrode film, the stack of films, and the Se-alloy layer on the flexible substrate moving with the speed to control the Se-alloy layer in a thickness of 10-100 nm corresponding to the Se—Na film in a thickness of 1-3 microns.

    Abstract translation: 一种制造薄膜太阳能电池的方法。 该方法包括将由金属化表面制备的柔性基材滚出,以速度线性地移动。 该方法还包括形成覆盖金属化表面的背面电极膜,该表面以速度移动。 此外,该方法包括形成至少包含覆盖在背电极膜上的铜,镓和铟的膜的叠层,并且形成覆盖该层叠膜的Se合金层。 此外,该方法包括从具有至少两个源的真空蒸发器沉积覆盖Se合金层的Se-Na轴承膜。 此外,该方法包括对于背面电极膜,薄膜叠层和柔性基板上的Se合金层实时地进行厚度测量,以便以Se的速度控制Se合金层的厚度为10 -100nm对应于厚度为1-3微米的Se-Na膜。

    Sn-plated copper or Sn-plated copper alloy having excellent heat resistance and manufacturing method thereof
    96.
    发明授权
    Sn-plated copper or Sn-plated copper alloy having excellent heat resistance and manufacturing method thereof 有权
    具有优异耐热性的镀锡铜或镀锡铜合金及其制造方法

    公开(公告)号:US08142906B2

    公开(公告)日:2012-03-27

    申请号:US12712494

    申请日:2010-02-25

    Abstract: In Sn-plated copper or a Sn-plated copper alloy according to the present invention, a surface plating layer including a Ni layer, a Cu—Sn alloy layer, and a Sn layer which are deposited in this order is formed on a surface of a base material made of copper or a copper alloy. An average thickness of the Ni layer is 0.1 to 1.0 μm, an average thickness of the Cu—Sn alloy layer is 0.55 to 1.0 μm, and an average thickness of the Sn layer is 0.2 to 1.0 μm. The Cu—Sn alloy layer includes Cu—Sn alloy layers having two compositions, a portion thereof in contact with the Ni layer is formed of an ε-phase having an average thickness of 0.5 to 0.95 μm, and a portion thereof in contact with the Sn layer is formed of a η-phase having an average thickness of 0.05 to 0.2 μm.

    Abstract translation: 在根据本发明的镀Sn的铜或镀Sn的铜合金中,在其表面上形成有依次沉积的Ni层,Cu-Sn合金层和Sn层的表面镀层 由铜或铜合金制成的基材。 Ni层的平均厚度为0.1〜1.0μm,Cu-Sn合金层的平均厚度为0.55〜1.0μm,Sn层的平均厚度为0.2〜1.0μm。 Cu-Sn合金层包括具有两种组成的Cu-Sn合金层,其与Ni层接触的部分由平均厚度为0.5至0.95μm的相形成,并且其部分与 Sn层由平均厚度为0.05〜0.2μm的相形成。

    Method of Chrome Plating Magnesium and Magnesium Alloys
    97.
    发明申请
    Method of Chrome Plating Magnesium and Magnesium Alloys 有权
    镀铬镁合金的方法

    公开(公告)号:US20090317556A1

    公开(公告)日:2009-12-24

    申请号:US12141998

    申请日:2008-06-19

    Abstract: A process for chrome plating magnesium and its alloys. The process uses a combination of electroless nickel plating, a multi-stage copper coating transition system and multiple layers of electrodeposited nickel to form a corrosion resistant system of substantial impermeability and interlayer adherence suitable for direct chromium electroplating.

    Abstract translation: 镁及其合金镀铬工艺。 该方法使用化学镀镍,多级铜涂层过渡系统和多层电沉积镍的组合,以形成适用于直接铬电镀的基本不渗透性和层间粘附的耐腐蚀体系。

    Method of preparing copper plating layer having high adhesion to magnesium alloy using electroplating
    98.
    发明授权
    Method of preparing copper plating layer having high adhesion to magnesium alloy using electroplating 失效
    使用电镀制备对镁合金具有高附着性的镀铜层的方法

    公开(公告)号:US07368047B2

    公开(公告)日:2008-05-06

    申请号:US11350911

    申请日:2006-02-10

    Inventor: Byung Chul Park

    CPC classification number: C25D5/42 C25D3/38 C25D3/40 C25D5/10

    Abstract: Disclosed is a method of preparing a copper electroplating layer having high adhesion to a magnesium alloy, which is advantageous because the usability of the magnesium alloy, having the highest specific strength among actually usable metals, can be increased through the development of a process of forming a uniform copper plating layer upon electroplating of the magnesium alloy. The method of preparing a copper electroplating layer having high adhesion to a magnesium alloy of this invention is characterized in that the magnesium alloy is pretreated with a plating pretreatment solution to form a film for electroplating, serving as a magnesium alloy pretreatment layer, exhibiting a uniform current distribution, which is then electroplated with copper to form the copper plating layer. According to this invention, through the pretreatment of the magnesium alloy, the adhesion of the copper plating layer to the film for electroplating formed on the magnesium alloy can be increased.

    Abstract translation: 公开了一种制备对镁合金具有高粘附性的铜电镀层的方法,这是有利的,因为通过开发成型工艺可以提高具有最高比强度的镁合金在实际使用的金属中的可用性 在镁合金电镀时的均匀镀铜层。 制备对本发明的镁合金具有高粘附性的铜电镀层的方法的特征在于,镁合金用电镀预处理溶液预处理以形成用作电镀的膜,用作镁合金预处理层,显示出均匀的 电流分布,然后用铜电镀以形成镀铜层。 根据本发明,通过镁合金的预处理,能够提高铜镀层与形成在镁合金上的电镀用膜的密合性。

    Copper strike plating bath
    100.
    发明申请
    Copper strike plating bath 审中-公开
    铜触电镀浴

    公开(公告)号:US20060027462A1

    公开(公告)日:2006-02-09

    申请号:US11197263

    申请日:2005-08-05

    CPC classification number: C25D5/34 C25D3/40

    Abstract: A copper strike plating bath comprising a copper cyanide compound and one or more of salts of inorganic acids and salts of organic acids. The copper cyanide compound is preferably sodium copper cyanide, potassium copper cyanide or a mixture thereof.

    Abstract translation: 包含氰化铜化合物和一种或多种无机酸盐和有机酸盐的铜触镀浴。 氰化铜化合物优选为氰化铜钠,氰化钾铜或其混合物。

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