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公开(公告)号：US20210020835A1
公开(公告)日：2021-01-21
申请号：US17060884
申请日：2020-10-01
Inventor： Minhyun LEE , Seongjun PARK , Hyunjae SONG , Hyeonjin SHIN , Kibum KIM , Sanghun LEE , Yunho KANG
IPC: H01L45/00 , H01L21/768 , G11C13/00
Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
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92.发明申请公开(公告)号：US20200350252A1
公开(公告)日：2020-11-05
申请号：US16861891
申请日：2020-04-29
Inventor： Keunwook SHIN , Kibum KIM , Hyunmi KIM , Hyeonjin SHIN , Sanghun LEE
IPC: H01L23/538 , H01L29/16 , H01L23/00 , H01L23/532
Abstract: An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.
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93.发明申请公开(公告)号：US20200294928A1
公开(公告)日：2020-09-17
申请号：US16884590
申请日：2020-05-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Eun BYUN , Keunwook SHIN , Yonghoon KIM , Hyeonjin SHIN , Hyunjae SONG , Changseok LEE , Changhyun KIM , Yeonchoo CHO
IPC: H01L23/532
Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.
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94.发明申请公开(公告)号：US20200286732A1
公开(公告)日：2020-09-10
申请号：US16807702
申请日：2020-03-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Keunwook SHIN , Janghee LEE , Seunggeol NAM , Hyeonjin SHIN , Hyunseok LIM , Alum JUNG , Kyung-Eun BYUN , Jeonil LEE , Yeonchoo CHO
Abstract: Provided are a method of pre-treating a substrate and a method of directly forming graphene by using the method of pre-treating the substrate. In the method of pre-treating the substrate in the method of directly forming graphene, according to an embodiment, the substrate is pre-treated by using a pre-treatment gas including at least a carbon source and hydrogen. The method of directly forming graphene includes a process of pre-treating a substrate and a process of directly growing graphene on the substrate that is pre-treated. The process of pre-treating the substrate is performed according to the method of pre-treating the substrate.
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公开(公告)号：US20200058741A1
公开(公告)日：2020-02-20
申请号：US16662872
申请日：2019-10-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho LEE , Hyeonjin SHIN , Dongwook LEE , Seongjun PARK , Kiyoung LEE , Eunkyu LEE , Sanghyun JO , Jinseong HEO
IPC: H01L29/16 , H01L29/12 , H01L27/15 , H01L27/146 , H01L27/144 , H01L31/0352 , H01L51/00 , H01L51/05 , H01L31/101 , H01L31/028 , H01L31/09
Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.
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Patent Agency Ranking
96.发明申请公开(公告)号：US20180145190A1
公开(公告)日：2018-05-24
申请号：US15603796
申请日：2017-05-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kiyoung LEE , Jinseong HEO , Jaeho LEE , Haeryong KIM , Seongjun PARK , Hyeonjin SHIN , Eunkyu LEE , Sanghyun JO
IPC: H01L31/0216 , H01L31/028 , H01L31/0224 , H01L31/0352 , H01L31/18 , G01N21/59
CPC classification number: H01L31/02161 , G01N21/59 , H01L31/022466 , H01L31/028 , H01L31/0304 , H01L31/035218 , H01L31/1804 , Y02E10/544 , Y02E10/547
Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.
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公开(公告)号：US20180062543A1
公开(公告)日：2018-03-01
申请号：US15412557
申请日：2017-01-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Alum JUNG , Hyeonjin SHIN , Jae-Young KIM , Kyung-Eun BYUN
IPC: H02N1/04
CPC classification number: H02N1/04
Abstract: Disclosed are triboelectric generators using surface plasmon resonance. A triboelectric generator includes first and second electrodes spaced apart from each other, first and second electrification layers provided on the first and second electrodes, respectively, and a light source provided to irradiate light onto the second electrification layer. Herein, the second electrification layer includes a metallic material configured to generate surface plasmon resonance due to light of a desired wavelength, and the light source irradiates the light of the desired wavelength configured to generate the surface plasmon resonance, onto the second electrification layer.
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98.发明申请公开(公告)号：US20180061734A1
公开(公告)日：2018-03-01
申请号：US15497683
申请日：2017-04-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dongwook LEE , Sangwon KIM , Minsu SEOL , Seongjun JEONG , Seunggeol NAM , Seongjun PARK , Hyeonjin SHIN
IPC: H01L23/373 , H01L21/48 , H01L23/31
CPC classification number: H01L23/3733 , B82Y30/00 , C08K3/042 , H01L21/4871 , H01L23/3171 , H01L23/373 , H01L23/3737 , H01L23/3738 , H01L23/42
Abstract: Disclosed are heat dissipation structures using nano-sized graphene fragments such as graphene quantum dots (GQDs) and/or methods of manufacturing the heat dissipation structures. A heat dissipation structure includes a heating element, and a heat dissipation film on the heating element to dissipate heat generated from the heating element, to outside. The heat dissipation film may include GQDs.
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99.发明申请公开(公告)号：US20180041139A1
公开(公告)日：2018-02-08
申请号：US15584125
申请日：2017-05-02
Inventor： Hyeonjin SHIN , Jeongho Cho , Hyungseok Kang , Han Kim , Sangwoo Kim , Seongsu Kim , Siuk Cheon
IPC: H02N1/04
Abstract: Example embodiments relate to an electrode structure, a triboelectric generator including the electrode structure, and a method of manufacturing the electrode structure. The electrode structure includes a flexible layer configured to be bendable by an external force and an electrode, at least some regions thereof being embedded in the flexible layer.
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公开(公告)号：US20180024668A1
公开(公告)日：2018-01-25
申请号：US15403491
申请日：2017-01-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Eun BYUN , Jae-Young KIM , Hyeonjin SHIN , Alum JUNG
CPC classification number: G06F3/044 , G02F1/0136 , G02F1/167 , G06F3/041 , H02N1/04
Abstract: Example embodiments relate to a triboelectric device including first and second electrodes that are spaced apart from each other, a charging layer provided on the first electrode, a display layer, which is provided between the first and second electrodes, configured to implement an image according to a change in an electric field between the first and second electrodes, and a charging member charged with an opposite polarity to the polarity of the charging layer by contacting the charging layer, wherein the triboelectric device is configured to implement the image according to the change in the electric field between the first and second electrodes in a contact area of the charging member and the charging layer.
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