公开(公告)号：US20150162452A1

公开(公告)日：2015-06-11

申请号：US14558857

申请日：2014-12-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/04

CPC classification number: H01L29/78606 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

Abstract: A semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film with a gate insulating film therebetween, a nitride insulating film in contact with the oxide semiconductor film, and a conductive film in contact with the oxide semiconductor film. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the conductive film. The second region contains an impurity element. The impurity element concentration of the second region is different from that of the first region.

Abstract translation: 半导体器件包括氧化物半导体膜，与氧化物半导体膜重叠的栅极与其间的栅极绝缘膜，与氧化物半导体膜接触的氮化物绝缘膜和与氧化物半导体膜接触的导电膜。 氧化物半导体膜包括与栅极绝缘膜接触的第一区域和与导电膜接触的第二区域。 第二区域含有杂质元素。 第二区域的杂质元素浓度不同于第一区域的杂质元素浓度。

公开(公告)号：US20150053973A1

公开(公告)日：2015-02-26

申请号：US14462994

申请日：2014-08-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masahiro Katayama ,  Masami Jintyou

IPC: H01L27/12 ,  H01L29/786 ,  H01L49/02

CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L29/94

Abstract: A semiconductor device has an insulating surface provided with a transistor and a capacitor. The transistor includes a gate electrode, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film between the gate electrode and the oxide semiconductor film, and a first conductive film serving as a pair of electrodes in contact with the oxide semiconductor film. An oxide insulating film in contact with the oxide semiconductor film, a metal oxide film over the oxide insulating film, and a second conductive film serving as a pixel electrode which is in an opening in the metal oxide film and is in contact with the first conductive film are provided. The capacitor includes a film having conductivity over the gate insulating film, the second conductive film, and the metal oxide film provided between the film having conductivity and the second conductive film.

Abstract translation: 半导体器件具有设置有晶体管和电容器的绝缘表面。 晶体管包括栅电极，与栅电极重叠的氧化物半导体膜，栅电极和氧化物半导体膜之间的栅极绝缘膜，以及用作与氧化物半导体膜接触的一对电极的第一导电膜。 与氧化物半导体膜接触的氧化物绝缘膜，氧化物绝缘膜上的金属氧化物膜，以及用作像素电极的第二导电膜，其在金属氧化物膜的开口中并与第一导电 提供电影。 电容器包括在栅极绝缘膜上具有导电性的膜，第二导电膜和设置在具有导电性的膜和第二导电膜之间的金属氧化物膜。

公开(公告)号：US20140374908A1

公开(公告)日：2014-12-25

申请号：US14306862

申请日：2014-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takahiro IGUCHI

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L21/76829 ,  G02F1/133345 ,  G02F1/136204 ,  G02F2001/136295 ,  G02F2201/50 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L27/1225 ,  H01L27/1262 ,  H01L27/3272 ,  H01L29/458 ,  H01L29/786 ,  H01L29/7869 ,  H01L51/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To improve the reliability of a semiconductor device including a low-resistance material such as copper, aluminum, gold, or silver as a wiring. Provided is a semiconductor device including a pair of electrodes electrically connected to a semiconductor layer which has a stacked-layer structure including a first protective layer in contact with the semiconductor layer and a conductive layer containing the low-resistance material and being over and in contact with the first protective layer. The top surface of the conductive layer is covered with a second protective layer functioning as a mask for processing the conductive layer. The side surface of the conductive layer is covered with a third protective layer. With this structure, entry or diffusion of the constituent element of the pair of conductive layers containing the low-resistance material into the semiconductor layer is suppressed.

Abstract translation: 为了提高包括诸如铜，铝，金或银的低电阻材料的半导体器件作为布线的可靠性。 提供一种半导体器件，其包括电连接到半导体层的一对电极，所述半导体层具有层叠结构，所述层叠结构包括与半导体层接触的第一保护层和包含低电阻材料的导电层并且接触 与第一保护层。 导电层的顶表面覆盖有用作处理导电层的掩模的第二保护层。 导电层的侧表面被第三保护层覆盖。 通过这种结构，抑制了含有低电阻材料的一对导电层的构成元素进入或扩散到半导体层中。

公开(公告)号：US08809154B2

公开(公告)日：2014-08-19

申请号：US13721972

申请日：2012-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Yasuharu Hosaka ,  Terumasa Ikeyama ,  Shunpei Yamazaki

IPC: H01L21/336

CPC classification number: H01L21/02365 ,  G02F1/1368 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/4908 ,  H01L29/66477 ,  H01L29/7869

Abstract: A highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics is manufactured. In the semiconductor device which includes an inverted-staggered transistor having a bottom-gate structure and being provided over a substrate having an insulating surface, at least a first gate insulating film and a second gate insulating film are provided between a gate electrode layer and an oxide semiconductor film, and heat treatment is performed at a temperature of 450° C. or higher, preferably 650° C. or higher, and then the oxide semiconductor film is formed. By the heat treatment at a temperature of 450° C. or higher before the formation of the oxide semiconductor film, diffusion of hydrogen elements into the oxide semiconductor film, which causes degradation or variations in electric characteristics of the transistor, can be reduced, so that the transistor can have stable electric characteristics.

Abstract translation: 制造其中包含氧化物半导体膜的晶体管具有稳定的电特性的高度可靠的半导体器件。 在包括具有底栅结构的反交错晶体管并且设置在具有绝缘表面的衬底上的半导体器件中，至少第一栅极绝缘膜和第二栅极绝缘膜设置在栅极电极层和第二栅极绝缘膜之间， 氧化物半导体膜，在450℃以上，优选650℃以上的温度进行热处理，然后形成氧化物半导体膜。 通过在形成氧化物半导体膜之前在450℃以上的温度下进行热处理，可以减少导致劣化或者晶体管的电特性的变化的氢元素向氧化物半导体膜的扩散，因此 晶体管可以具有稳定的电气特性。

公开(公告)号：US12136674B2

公开(公告)日：2024-11-05

申请号：US17433728

申请日：2020-02-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Kenichi Okazaki

IPC: H01L29/786

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. The semiconductor device includes a first conductive layer, a first insulating layer, a semiconductor layer, and a pair of second conductive layers. The first insulating layer is in contact with a top surface of the first conductive layer. The semiconductor layer is in contact with a top surface of the first insulating layer. The pair of second conductive layers are in contact with a top surface of the semiconductor layer. The pair of second conductive layers are apart from each other in a region overlapping with the first conductive layer. The semiconductor layer contains indium and oxygen and has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc. In addition, the element M is one or more of gallium, aluminum, yttrium, and tin.

公开(公告)号：US12087825B2

公开(公告)日：2024-09-10

申请号：US18243850

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C04B35/453 ,  C04B35/622 ,  C23C14/08 ,  C23C14/58 ,  H01L27/12 ,  H01L29/778 ,  H01L29/786

CPC classification number: H01L29/24 ,  C03C17/245 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C23C14/08 ,  C23C14/5853 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  C03C2217/23 ,  C03C2218/151 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/787 ,  C04B2235/96

Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US12034080B2

公开(公告)日：2024-07-09

申请号：US16520831

申请日：2019-07-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Yasuharu Hosaka ,  Masami Jintyou ,  Takahiro Iguchi ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics in a transistor including an oxide semiconductor film. The transistor includes a first gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a second insulating film, a second gate electrode, and a third insulating film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side, and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film include In, M, and Zn (M is Al, Ga, Y, or Sn). In a region of the second oxide semiconductor film, the number of atoms of In is smaller than that in the first oxide semiconductor film. The second gate electrode includes at least one metal element included in the oxide semiconductor film.

公开(公告)号：US11935962B2

公开(公告)日：2024-03-19

申请号：US17744812

申请日：2022-05-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368 ,  H10K59/121

CPC classification number: H01L29/7869 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/78603 ,  G02F1/1368 ,  H10K59/1213

Abstract: A semiconductor device having favorable characteristics is provided. A semiconductor device having stable electrical characteristics is provided. An island-shaped insulating layer containing an oxide is provided in contact with a bottom surface of a semiconductor layer containing a metal oxide that exhibits semiconductor characteristics. The insulating layer containing an oxide is provided in contact with a portion of the semiconductor layer to be a channel formation region and is not provided under portions to be low-resistance regions.

公开(公告)号：US11842901B2

公开(公告)日：2023-12-12

申请号：US17843083

申请日：2022-06-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masami Jintyou ,  Junichi Koezuka ,  Takashi Hamochi ,  Yasuharu Hosaka

IPC: H01L29/786 ,  H01L21/385 ,  H01L21/02 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/04 ,  H01L29/49 ,  H01L29/66 ,  H01L29/51

CPC classification number: H01L21/385 ,  H01L21/022 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0234 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/518

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US11830950B2

公开(公告)日：2023-11-28

申请号：US17346359

申请日：2021-06-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka Nakazawa ,  Junichi Koezuka ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L27/146 ,  H01L29/66 ,  H01L27/15 ,  H01L29/45 ,  H01L27/12 ,  H10B12/00 ,  H01L21/768 ,  H01L29/417 ,  H01L27/088 ,  H01L21/8258 ,  H01L27/06

CPC classification number: H01L29/7869 ,  H01L21/76843 ,  H01L21/76856 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/146 ,  H01L27/15 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H10B12/312 ,  H01L21/8258 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/088

Abstract: A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.