Electron-Bombarded Charge-Coupled Device And Inspection Systems Using EBCCD Detectors
    91.
    发明申请
    Electron-Bombarded Charge-Coupled Device And Inspection Systems Using EBCCD Detectors 审中-公开
    使用EBCCD检测器的电子轰击电荷耦合器件和检测系统

    公开(公告)号:US20130148112A1

    公开(公告)日:2013-06-13

    申请号:US13710315

    申请日:2012-12-10

    Abstract: A focusing EBCCD includes a control device positioned between a photocathode and a CCD. The control device has a plurality of holes therein, wherein the plurality of holes are formed perpendicular to a surface of the photocathode, and wherein a pattern of the plurality of holes is aligned with a pattern of pixels in the CCD. Each hole is surrounded by at least one first electrode, which is formed on a surface of the control device facing the photocathode. The control device may include a plurality of ridges between the holes. The control device may be separated from the photocathode by approximately half a shorter dimension of a CCD pixel or less. A plurality of first electrodes may be provided, wherein each first electrode surrounds a given hole and is separated from the given hole by a gap.

    Abstract translation: 聚焦EBCCD包括位于光电阴极和CCD之间的控制装置。 控制装置具有多个孔,其中多个孔垂直于光电阴极的表面形成,并且其中多个孔的图案与CCD中的像素图案对准。 每个孔被形成在面向光电阴极的控制装置的表面上的至少一个第一电极包围。 控制装置可以包括孔之间的多个脊。 控制装置可以与光电阴极分离CCD像素的大约一半的较短尺寸或更小。 可以提供多个第一电极,其中每个第一电极围绕给定的孔并且通过间隙与给定的孔分离。

    Overlay metrology system and method

    公开(公告)号:US11067389B2

    公开(公告)日:2021-07-20

    申请号:US15952081

    申请日:2018-04-12

    Abstract: A system for measuring an overlay error of a sample is disclosed. The system may include a broadband illumination source configured to emit broadband illumination. The system may also include one or more optical elements configured to direct the broadband illumination to a target disposed on the sample, wherein the one or more optical elements are configured to collect illumination from the target and direct it to a spectrometer, wherein the spectrometer is configured to disperse multiple wavelengths of the illumination collected from the sample to multiple elements of a sensor to generate a plurality of signals. The system may also include a controller configured to calculate an overlay error between a first structure and a second structure of the target by comparing the plurality of signals with a plurality of calculated signals.

    PHOTOCATHODE INCLUDING SILICON SUBSTRATE WITH BORON LAYER

    公开(公告)号:US20190066962A1

    公开(公告)日:2019-02-28

    申请号:US16177144

    申请日:2018-10-31

    Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

    Electron Source
    96.
    发明申请
    Electron Source 审中-公开

    公开(公告)号:US20190049851A1

    公开(公告)日:2019-02-14

    申请号:US16161010

    申请日:2018-10-15

    Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

    Laser repetition rate multiplier and flat-top beam profile generators using mirrors and/or prisms

    公开(公告)号:US10044164B2

    公开(公告)日:2018-08-07

    申请号:US15239268

    申请日:2016-08-17

    Abstract: A repetition rate (pulse) multiplier includes one or more beam splitters and prisms forming one or more ring cavities with different optical path lengths that delay parts of the energy of each pulse. A series of input laser pulses circulate in the ring cavities and part of the energy of each pulse leaves the system after traversing the shorter cavity path, while another part of the energy leaves the system after traversing the longer cavity path, and/or a combination of both cavity paths. By proper choice of the ring cavity optical path length, the repetition rate of an output series of laser pulses can be made to be a multiple of the input repetition rate. The relative energies of the output pulses can be controlled by choosing the transmission and reflection coefficients of the beam splitters. Some embodiments generate a time-averaged output beam profile that is substantially flat in one dimension.

    Sensor With Electrically Controllable Aperture For Inspection And Metrology Systems

    公开(公告)号:US20180070040A1

    公开(公告)日:2018-03-08

    申请号:US15806913

    申请日:2017-11-08

    CPC classification number: H04N5/3722 G01N21/956 G01N2201/12

    Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.

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