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147 条记录 (耗时 0.046 秒)

    Nanoscale multiplexer
    91.
    发明授权
    Nanoscale multiplexer 有权
    纳米复合器

    公开(公告)号：US08258801B2

    公开(公告)日：2012-09-04

    申请号：US12380910

    申请日：2009-03-05

    申请人： Philip J. Kuekes

    发明人： Philip J. Kuekes

    IPC分类号： G01R11/32 ,  H01L29/04

    CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C13/0002 ,  G11C13/0023 ,  G11C2213/77 ,  G11C2213/81

    摘要： In one embodiment of the present invention, a microscale or sub-microscale signal line, interconnected with one set of parallel nanowires of a nanowire crossbar, serves as a multiplexer. The multiplexer is used to detect the conductivity state of a nanowire junction within the nanowire crossbar. In one method embodiment of the present invention, a first signal is output to the two nanowires interconnected by the nanowire junction, while a second signal is output to the remaining nanowires of the nanowire crossbar. Then, the second signal is output to the two nanowires interconnected by the nanowire junction, while the first signal is output to the remaining nanowires of the nanowire crossbar. The resulting signal detected on the multiplexer is reflective of the conductivity state of the nanowire junction.

    摘要翻译： 在本发明的一个实施例中，与纳米线横截面的一组平行纳米线互连的微尺度或亚微米级信号线用作多路复用器。 多路复用器用于检测纳米线横截面内的纳米线结的导电性状态。 在本发明的一个方法实施例中，第一信号被输出到通过纳米线结互连的两个纳米线，而第二信号被输出到纳米线横截面的剩余纳米线。 然后，第二信号被输出到通过纳米线结互连的两个纳米线，而第一个信号被输出到纳米线横截面的剩余纳米线。 在多路复用器上检测到的结果信号反映了纳米线结的导电性状态。

    Configurable molecular switch array
    94.
    发明授权
    Configurable molecular switch array 失效
    可配置的分子开关阵列

    公开(公告)号：US08004876B2

    公开(公告)日：2011-08-23

    申请号：US10233232

    申请日：2002-08-30

    申请人： Gregory S. Snider ,  Philip J. Kuekes ,  R. Stanley Williams

    发明人： Gregory S. Snider ,  Philip J. Kuekes ,  R. Stanley Williams

    IPC分类号： G11C11/00

    CPC分类号： H01L27/285 ,  B82Y10/00 ,  G11C13/0009 ,  G11C13/0014 ,  G11C2213/14 ,  G11C2213/34 ,  G11C2213/77 ,  G11C2213/81

    摘要： A computing system for implementing at least one electronic circuit with gain comprises at least one two-dimensional molecular switch array. The molecular switch array is formed by assembling two or more crossed planes of wires into a configuration of devices. Each device comprises a junction formed by a pair of crossed wires and at least one connector species that connects the pair of crossed wires in the junction. The junction has a functional dimension in nanometers, and includes a switching capability provided by both (1) one or more connector species and the pair of crossed wires and (2) a configurable nano-scale wire transistor having a first state that functions as a transistor and a second state that functions as a conducting semiconductor wire. Specific connections are made to interconnect the devices and connect the devices to two structures that provide high and low voltages.

    摘要翻译： 用于实现具有增益的至少一个电子电路的计算系统包括至少一个二维分子开关阵列。 分子开关阵列通过将两个或更多个交叉的导线平面组装成器件的配置而形成。 每个装置包括由一对交叉线形成的连接点和连接该连接处的一对交叉线的至少一个连接器种类。 该结具有纳米的功能尺寸，并且包括由（1）一个或多个连接器种类和一对交叉导线提供的切换能力，以及（2）具有第一状态的可配置纳米级线晶体管，其具有作为 晶体管和作为导电半导体线的第二状态。 进行具体的连接来连接设备并将设备连接到提供高和低电压的两个结构。

    SUB-DIFFRACTION-LIMITED IMAGING SYSTEMS AND METHODS
    95.
    发明申请
    SUB-DIFFRACTION-LIMITED IMAGING SYSTEMS AND METHODS 有权
    子衍射有限成像系统和方法

    公开(公告)号：US20100302625A1

    公开(公告)日：2010-12-02

    申请号：US12473402

    申请日：2009-05-28

    申请人： Jingjing Li ,  Philip J. Kuekes

    发明人： Jingjing Li ,  Philip J. Kuekes

    IPC分类号： G02F1/29 ,  G02B27/56 ,  G01D5/30

    CPC分类号： G02B27/56 ,  G01D5/30 ,  G02F1/29 ,  G02F2202/027 ,  G02F2202/20 ,  G02F2202/30 ,  G02F2202/36

    摘要： Various embodiments of the present invention are directed to systems and methods for obtaining images of objects with higher resolution than the diffraction limit. In one aspect, a method for collecting evanescent waves scattered from an object comprises electronically configuring a reconfigurable device to operate as a grating for one or more lattice periods using a computing device. Propagating waves scattered from the object pass through the reconfigurable device and a portion of evanescent waves scattered from the object are projected into the far field of the object. The method includes detecting propagating waves and detecting the portion of evanescent waves projected into the far field for each lattice period using an imaging system.

    摘要翻译： 本发明的各种实施例涉及用于获得具有比衍射极限更高分辨率的物体的图像的系统和方法。 一方面，一种用于收集从物体散射的ev逝波的方法包括使用计算装置电子地配置可重构装置作为一个或多个晶格周期的光栅。 从物体散射的传播波通过可重构装置，并且从物体散射的一部分ev逝波被投射到物体的远场中。 该方法包括使用成像系统检测传播波并且检测投射到远场中的每个格周期的瞬逝波的部分。

    Three-dimensional nanoscale crossbars
    96.
    发明授权
    Three-dimensional nanoscale crossbars 有权
    三维纳米级横条

    公开(公告)号：US07786467B2

    公开(公告)日：2010-08-31

    申请号：US11114307

    申请日：2005-04-25

    申请人： R. Stanley Williams ,  Philip J. Kuekes

    发明人： R. Stanley Williams ,  Philip J. Kuekes

    IPC分类号： H01L31/00

    CPC分类号： H04L49/40 ,  B82Y10/00 ,  G11C13/02 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/81 ,  H04L49/101 ,  Y10S977/762 ,  Y10S977/767

    摘要： Various embodiments of the present invention include three-dimensional, at least partially nanoscale, electronic circuits and devices in which signals can be routed in three independent directions, and in which electronic components can be fabricated at junctions interconnected by internal signal lines. The three-dimensional, at least partially nanoscale, electronic circuits and devices include layers, the nanowire or microscale-or-submicroscale/nanowire junctions of each of which may be economically and efficiently fabricated as one type of electronic component. Various embodiments of the present invention include nanoscale memories, nanoscale programmable arrays, nanoscale multiplexers and demultiplexers, and an almost limitless number of specialized nanoscale circuits and nanoscale electronic components.

    摘要翻译： 本发明的各种实施例包括三维，至少部分纳米级的电子电路和装置，其中信号可以在三个独立的方向上布线，并且其中电子部件可以在通过内部信号线互连的连接点处制造。 三维，至少部分纳米级的电子电路和器件包括层，其中每一个的纳米线或微米级或亚微米级/纳米线结可以经济地和有效地制造为一种类型的电子部件。 本发明的各种实施例包括纳米级存储器，纳米尺度可编程阵列，纳米级多路复用器和解复用器，以及几乎无限数量的专用纳米尺度电路和纳米级电子部件。

    Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems
    97.
    发明授权
    Crossbar-memory systems and methods for writing to and reading from crossbar memory junctions of crossbar-memory systems 有权
    交叉存储器系统和用于写入和读取交叉存储器系统的交叉存储器结的方法

    公开(公告)号：US07778061B2

    公开(公告)日：2010-08-17

    申请号：US11582208

    申请日：2006-10-16

    申请人： Warren Robinett ,  Philip J. Kuekes

    发明人： Warren Robinett ,  Philip J. Kuekes

    IPC分类号： G11C11/00

    CPC分类号： G11C13/02 ,  B82Y10/00 ,  G06F11/1008 ,  G06F11/1076 ,  G11C11/54 ,  G11C13/0023 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0047 ,  G11C2013/0057 ,  G11C2013/009 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81

    摘要： Various embodiments of the present invention are directed to crossbar-memory systems to methods for writing information to and reading information stored in such systems. In one embodiment of the present invention, a crossbar-memory system comprises a first layer of microscale signal lines, a second layer of microscale signal lines, a first layer of nanowires configured so that each first layer nanowire overlaps each first layer microscale signal line, and a second layer of nanowires configured so that each second layer nanowire overlaps each second layer microscale signal line and overlaps each first layer nanowire. The crossbar-memory system includes nonlinear-tunneling resistors configured to selectively connect first layer nanowires to first layer microscale signal lines and to selectively connect second layer nanowires to second layer microscale signal lines. The crossbar-memory system also includes nonlinear tunneling-hysteretic resistors configured to connect each first layer nanowire to each second layer nanowire at each crossbar intersection.

    摘要翻译： 本发明的各种实施例涉及交叉存储器系统，用于将信息写入和读取存储在这样的系统中的信息的方法。 在本发明的一个实施例中，交叉开关存储器系统包括微米级信号线的第一层，微米级信号线的第二层，被配置为使得每个第一层纳米线与每个第一层微米信号线重叠的第一纳米线层， 以及第二层纳米线，其被配置为使得每个第二层纳米线与每个第二层微米信号线重叠并且与每个第一层纳米线重叠。 交叉开关存储器系统包括非线性隧道电阻器，其被配置为选择性地将第一层纳米线连接到第一层微型信号线并且选择性地将第二层纳米线连接到第二层微量信号线。 交叉开关存储器系统还包括非线性隧道迟滞电阻器，其被配置为在每个交叉点交叉处将每个第一层纳米线连接到每个第二层纳米线。

    Multilevel imprint lithography
    99.
    发明申请
    Multilevel imprint lithography 失效
    多层压印光刻

    公开(公告)号：US20100112809A1

    公开(公告)日：2010-05-06

    申请号：US11636264

    申请日：2006-12-07

    申请人： Pavel Kornilovich ,  Yong Chen ,  Duncan Stewart ,  R. Stanley Williams ,  Philip J. Kuekes ,  Mehmet Fatih Yanik

    发明人： Pavel Kornilovich ,  Yong Chen ,  Duncan Stewart ,  R. Stanley Williams ,  Philip J. Kuekes ,  Mehmet Fatih Yanik

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76838 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.

    摘要翻译： 提供具有突出图案的模具，其通过压印过程被压入薄聚合物膜。 提供了纳米线和微丝之间的控制连接以及电子电路的其它光刻元件。 打印印记被配置成形成大致平行的纳米线的阵列，其具有（1）X方向上的微尺寸，（2）在Y方向上的纳米尺寸和纳米间距，以及Z方向上的三个或更多个不同的高度。 如此形成的印章可以用于将特定的单个纳米线连接到微细线或垫的特定微观区域。 模具中的突出图案在薄聚合物膜中产生凹陷，因此聚合物层获得模具上图案的相反。 在除去模具之后，处理膜，使得聚合物图案可以在基底上的金属/半导体图案上转印。

    Method and system for device reconfiguration for defect amelioration
    100.
    发明申请
    Method and system for device reconfiguration for defect amelioration 有权
    用于缺陷改善的设备重新配置的方法和系统

    公开(公告)号：US20100094580A1

    公开(公告)日：2010-04-15

    申请号：US12288021

    申请日：2008-10-15

    申请人： Joseph Warren Robinett ,  Philip J. Kuekes ,  R. Stanley Williams

    发明人： Joseph Warren Robinett ,  Philip J. Kuekes ,  R. Stanley Williams

    IPC分类号： G01R31/00

    CPC分类号： G01R31/317

    摘要： Embodiments of the present invention are directed to cost-effective defect amelioration in manufactured electronic devices that include nanoscale components. Certain embodiments of the present invention are directed to amelioration of defects in electronic devices that contain nanoscale demultiplexers. In certain embodiments of the present invention, the nanoscale-demultiplexer-containing devices include reconfigurable encoders. In one embodiment of the present invention, the table of codes within a reconfigurable encoder is permuted, and a device is configured in accordance with the permuted codes, in order to produce a permuted table of codes that, when input to an appropriately configured nanoscale demultiplexer, produces correct outputs despite defects in the nanoscale demultiplexer.

    摘要翻译： 本发明的实施例涉及在包括纳米级组件的制造的电子设备中的经济有效的缺陷改善。 本发明的某些实施例涉及改善包含纳米级解复用器的电子设备中的缺陷。 在本发明的某些实施例中，含纳米级解复用器的装置包括可重构编码器。 在本发明的一个实施例中，可重构编码器内的代码表被置换，并且根据置换代码配置器件，以便产生置换的代码表，当输入到适当配置的纳米级解复用器 ，尽管纳米级解复用器中存在缺陷，但仍能产生正确的输出。