Non-volatile memory cell with enhanced filament formation characteristics
    94.
    发明授权
    Non-volatile memory cell with enhanced filament formation characteristics 有权
    具有增强的细丝形成特性的非挥发性记忆体

    公开(公告)号:US07795606B2

    公开(公告)日:2010-09-14

    申请号:US12261137

    申请日:2008-10-30

    Abstract: Method and apparatus for constructing a non-volatile memory cell, such as a modified RRAM cell. In some embodiments, a memory cell comprises a resistive storage layer disposed between a first electrode layer and a second electrode layer. Further in some embodiments, the storage layer has a localized region of decreased thickness to facilitate formation of a conductive filament through the storage layer from the first electrode to the second electrode.

    Abstract translation: 用于构造诸如修改的RRAM单元的非易失性存储单元的方法和装置。 在一些实施例中,存储单元包括设置在第一电极层和第二电极层之间的电阻存储层。 此外,在一些实施例中,存储层具有减小厚度的局部区域,以便于通过存储层从第一电极到第二电极的形成导电细丝。

    MAGNETIC SENSING DEVICE WITH REDUCED SHIELD-TO-SHIELD SPACING
    97.
    发明申请
    MAGNETIC SENSING DEVICE WITH REDUCED SHIELD-TO-SHIELD SPACING 有权
    具有减小的屏蔽到屏蔽间隔的磁感测装置

    公开(公告)号:US20090174968A1

    公开(公告)日:2009-07-09

    申请号:US11971664

    申请日:2008-01-09

    Abstract: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.

    Abstract translation: 磁传感器组件包括由磁性材料构成的第一和第二屏蔽件。 第一和第二屏蔽层定义物理屏蔽间隔。 传感器堆叠设置在第一和第二屏蔽之间,并且包括邻近第一屏蔽的晶种层,与第二屏蔽相邻的盖层,以及种子层和盖层之间的磁传感器。 种子层和/或盖层的至少一部分包括磁性材料,以提供小于物理屏蔽 - 屏蔽间隔的磁性传感器组件的有效的屏蔽到屏蔽间隔。

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