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公开(公告)号：US10361118B2
公开(公告)日：2019-07-23
申请号：US15498945
申请日：2017-04-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chang-Woo Sun , Ji-Eun Yun , Jae-Soon Lim , Youn-Joung Cho , Myong-Woon Kim , Kang-Yong Lee , Sang-Ick Lee , Sung-Woo Cho
IPC: H01L21/768 , C07F11/00 , H01L21/285 , C07F17/00
Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.
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公开(公告)号：US09359383B2
公开(公告)日：2016-06-07
申请号：US14319554
申请日：2014-06-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youn-Joung Cho , Senji Wada , Jung-Sik Choi , Jin-Seo Lee , Atsushi Sakurai , Kyoo-Chul Cho , Atsuya Yoshinaka , Haruyoshi Sato , Junji Ueyama , Tomoharu Yoshino , Masako Shimizu
IPC: C07C249/02 , C07F3/00 , C07C251/08 , C23C16/18
CPC classification number: C07F3/003 , C07C249/02 , C07C251/08 , C23C16/18
Abstract: The β-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the β-ketoimine ligand. A method of forming the β-ketoimine ligand and a method of forming a thin film using the metal complex compound including β-ketoimine ligand are provided.
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公开(公告)号：US10553449B2
公开(公告)日：2020-02-04
申请号：US15700491
申请日：2017-09-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sun-Hye Hwang , Youn-Joung Cho , Won-Woong Chung , Nam-Gun Kim , Kong-Soo Lee , Badro Im , Yoon-Chul Cho
IPC: H01L21/3213 , H01L21/311
Abstract: A method of forming a pattern includes forming an etch target layer on a substrate, forming sacrificial patterns on the etch target layer, the sacrificial patterns including a carbon-containing material, providing a silicon-sulfur compound or a sulfur-containing gas onto the sacrificial patterns to form a seed layer, providing a silicon precursor onto the seed layer to form silicon-containing mask patterns, and at least partially etching the etch target layer using the mask patterns.
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公开(公告)号：US09941114B2
公开(公告)日：2018-04-10
申请号：US14611691
申请日：2015-02-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youn-Joung Cho , Youn-Soo Kim , Sang-Jun Yim , Myong-Woon Kim , Sang-Ick Lee , Sang-Chul Youn
CPC classification number: H01L21/0228 , C07F7/003 , C23C16/405 , C23C16/45553 , H01L21/02189 , H01L23/291 , H01L23/3171 , H01L28/40 , H01L2924/0002 , H01L2924/00
Abstract: An organometallic precursor is represented by a chemical formula of Xn(M)(R1)m(R2)k. M is a central metal. X is a ligand of M and one of 6,6-dimethylfulvenyl, indenyl, cyclopentadienyl and cyclopentadienyl substituted with an amino group. R1 and R2 are ligands of M, and each independently an amino group or an ethylenediamino group. Each n, m and k is a positive integer, and a sum of n, m and k is equal to 3 or 4.
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5.发明授权β-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same 有权酮骨架配体，其制备方法，包含其的金属络合物和使用其制备薄膜的方法公开(公告)号：US09359382B2
公开(公告)日：2016-06-07
申请号：US14317102
申请日：2014-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youn-Joung Cho , Senji Wada , Jung-Sik Choi , Jin-Seo Lee , Atsushi Sakurai , Kyoo-Chul Cho , Atsuya Yoshinaka , Haruyoshi Sato , Junji Ueyama , Tomoharu Yoshino , Masako Shimizu
IPC: C23C16/06 , C07F3/00 , C07C249/02 , C07C251/08 , C23C16/18
CPC classification number: C07F3/003 , C07C249/02 , C07C251/08 , C23C16/18
Abstract: The β-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the β-ketoimine ligand. A method of forming the β-ketoimine ligand and a method of forming a thin film using the metal complex compound including β-ketoimine ligand are provided.
Abstract translation: 酮亚胺配体由下式1表示：其中R 1和R 2各自独立地为C 1 -C 5烷基。 金属络合物包括β-酮亚胺配体。 提供了形成β-酮亚胺配体的方法以及使用包括β-酮亚胺配体的金属络合物形成薄膜的方法。
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Patent Agency Ranking
公开(公告)号：US11062940B2
公开(公告)日：2021-07-13
申请号：US16442936
申请日：2019-06-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chang-Woo Sun , Ji-Eun Yun , Jae-Soon Lim , Youn-Joung Cho , Myong-Woon Kim , Kang-yong Lee , Sang-Ick Lee , Sung-Woo Cho
IPC: C23C16/455 , H01L21/768 , C07F17/00 , C23C16/18 , C23C16/34 , C07F11/00 , H01L21/285 , H01L27/108 , H01L27/11582 , H01L49/02
Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.
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公开(公告)号：US09923047B2
公开(公告)日：2018-03-20
申请号：US14967956
申请日：2015-12-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Se Hoon Oh , Seongyul Park , Chin Moo Cho , Yunjung Choi , Gyu-Hee Park , Youn-Joung Cho , Younsoo Kim , Jae Hyoung Choi
IPC: H01L49/02 , H01L21/322
CPC classification number: H01L28/65 , H01L21/322 , H01L28/75
Abstract: The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom electrode, a dielectric layer and a top electrode sequentially stacked on a substrate, and also where formation of the top electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer, in which the first metal nitride layer is disposed between the dielectric layer and the second metal nitride layer, and the first metal nitride layer is formed at a temperature lower than a temperature at which the second metal nitride layer is formed.
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公开(公告)号：US09562299B2
公开(公告)日：2017-02-07
申请号：US14155776
申请日：2014-01-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Myung-Beom Park , Yun-Deok Kang , Ki-Hyeon Kim , Youn-Joung Cho , Jung-Sik Choi
Abstract: An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (S), the accelerator accelerating copper (Cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution.
Abstract translation: 电镀液包括水溶性铜盐，硫化物离子和氯离子的水性电解质溶液，包含具有硫（S）的有机材料，促进铜（Cu）还原的促进剂的促进剂，包含聚醚化合物的抑制剂，抑制剂 选择性地抑制铜还原，以及包含在电解质水溶液中溶解成正离子的具有氮的水溶性聚合物的整平剂。
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9.发明授权Methods of forming a pattern and methods of manufacturing a semiconductor device using the same 有权形成图案的方法和使用该图案的半导体器件的制造方法公开(公告)号：US09425059B2
公开(公告)日：2016-08-23
申请号：US14143255
申请日：2013-12-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji-Man Park , Hyo-Jin Yun , Jin-Seo Lee , Youn-Joung Cho , Jun-Hyun Cho , Jung-Sik Choi
IPC: H01L21/00 , H01L21/308 , H01L45/00 , H01L27/24
CPC classification number: H01L21/3088 , H01L21/0274 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/1683
Abstract: A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.
Abstract translation: 形成图案的方法包括通过化学气相沉积（CVD）工艺在蚀刻靶层上形成底层，底层包括与光致酸产生剂（PAG）组合的硅化合物，在底层上形成光致抗蚀剂层，照射极端 在光致抗蚀剂层上形成紫外线（EUV）光以形成光致抗蚀剂图案，并使用光刻胶图案蚀刻蚀刻目标层作为蚀刻掩模。
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10.发明申请公开(公告)号：US20180102284A1
公开(公告)日：2018-04-12
申请号：US15498945
申请日：2017-04-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chang-Woo Sun , Ji-Eun Yun , Jae-Soon Lim , Youn-Joung Cho , Myong-Woon Kim , Kang-Yong Lee , Sang-Ick Lee , Sung-Woo Cho
IPC: H01L21/768 , H01L21/285 , C07F11/00
CPC classification number: H01L21/76841 , C07F11/00 , C07F17/00 , C23C16/18 , C23C16/34 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L27/1085 , H01L27/11582 , H01L28/60
Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.
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