公开(公告)号：US09941114B2

公开(公告)日：2018-04-10

申请号：US14611691

申请日：2015-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-Joung Cho ,  Youn-Soo Kim ,  Sang-Jun Yim ,  Myong-Woon Kim ,  Sang-Ick Lee ,  Sang-Chul Youn

IPC: H01L21/02 ,  H01L23/00 ,  C07F7/00 ,  H01L23/29 ,  H01L23/31 ,  C23C16/40 ,  C23C16/455 ,  H01L49/02

CPC classification number: H01L21/0228 ,  C07F7/003 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/02189 ,  H01L23/291 ,  H01L23/3171 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An organometallic precursor is represented by a chemical formula of Xn(M)(R1)m(R2)k. M is a central metal. X is a ligand of M and one of 6,6-dimethylfulvenyl, indenyl, cyclopentadienyl and cyclopentadienyl substituted with an amino group. R1 and R2 are ligands of M, and each independently an amino group or an ethylenediamino group. Each n, m and k is a positive integer, and a sum of n, m and k is equal to 3 or 4.

公开(公告)号：US10361118B2

公开(公告)日：2019-07-23

申请号：US15498945

申请日：2017-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Woo Sun ,  Ji-Eun Yun ,  Jae-Soon Lim ,  Youn-Joung Cho ,  Myong-Woon Kim ,  Kang-Yong Lee ,  Sang-Ick Lee ,  Sung-Woo Cho

IPC: H01L21/768 ,  C07F11/00 ,  H01L21/285 ,  C07F17/00

Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

公开(公告)号：US11062940B2

公开(公告)日：2021-07-13

申请号：US16442936

申请日：2019-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Woo Sun ,  Ji-Eun Yun ,  Jae-Soon Lim ,  Youn-Joung Cho ,  Myong-Woon Kim ,  Kang-yong Lee ,  Sang-Ick Lee ,  Sung-Woo Cho

IPC: C23C16/455 ,  H01L21/768 ,  C07F17/00 ,  C23C16/18 ,  C23C16/34 ,  C07F11/00 ,  H01L21/285 ,  H01L27/108 ,  H01L27/11582 ,  H01L49/02

Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

公开(公告)号：US20180102284A1

公开(公告)日：2018-04-12

申请号：US15498945

申请日：2017-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Woo Sun ,  Ji-Eun Yun ,  Jae-Soon Lim ,  Youn-Joung Cho ,  Myong-Woon Kim ,  Kang-Yong Lee ,  Sang-Ick Lee ,  Sung-Woo Cho

IPC: H01L21/768 ,  H01L21/285 ,  C07F11/00

CPC classification number: H01L21/76841 ,  C07F11/00 ,  C07F17/00 ,  C23C16/18 ,  C23C16/34 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76843 ,  H01L27/1085 ,  H01L27/11582 ,  H01L28/60

Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.