公开(公告)号：US20150206874A1

公开(公告)日：2015-07-23

申请号：US14327858

申请日：2014-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Hun SON

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L27/088 ,  H01L21/823412 ,  H01L21/823418 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7835 ,  H01L29/7848 ,  H01L29/785

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a gate structure formed on a substrate, a source/drain extension formed at one side of the gate structure while not being formed at the other side of the gate structure, and doped with a first type impurity, a halo region formed at one side of the gate structure while not being formed at the other side of the gate structure, and doped with a second type impurity different from the first type impurity, a first source/drain region formed at one side of the gate structure and doped with the first type impurity, and a second source/drain region formed at the other side of the gate structure and doped with the first type impurity.

Abstract translation: 提供一种半导体器件及其制造方法。 半导体器件包括形成在衬底上的栅极结构，在栅极结构的一侧形成的源极/漏极延伸，而不形成在栅极结构的另一侧，并且掺杂有第一类型的杂质，形成的卤素区 在栅极结构的一侧没有形成在栅极结构的另一侧，并且掺杂有不同于第一类型杂质的第二类型杂质;第一源极/漏极区域形成在栅极结构的一侧并掺杂 第一类杂质和形成在栅极结构的另一侧并掺杂有第一类型杂质的第二源/漏区。

公开(公告)号：US20140246724A1

公开(公告)日：2014-09-04

申请号：US14165775

申请日：2014-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho JANG ,  Seung-Hun SON ,  Jung-Bun LEE

IPC: H01L27/108

CPC classification number: H01L27/10897 ,  G11C5/025 ,  G11C11/404 ,  G11C2211/4016 ,  H01L27/10894

Abstract: Memory devices include a substrate including first to third regions, a memory element on the first region, a first transistor on the second region closer to the first region than to the third region and including a spacer filled with an insulating material, and a second transistor on the third region and including a spacer filled with air.

Abstract translation: 存储器件包括包括第一至第三区域的衬底，第一区域上的存储元件，在第二区域上比第三区域更靠近第一区域的第一晶体管，并且包括填充有绝缘材料的间隔区，以及第二晶体管 并且包括填充有空气的间隔件。