SEMICONDUCTOR MANUFACTURING APPARATUS AND OPERATING METHOD THEREOF

    公开(公告)号:US20240251496A1

    公开(公告)日:2024-07-25

    申请号:US18628152

    申请日:2024-04-05

    CPC classification number: H05G2/008 H01L21/268 G03F7/70033

    Abstract: Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.

    Semiconductor manufacturing apparatus and operating method thereof

    公开(公告)号:US11979973B2

    公开(公告)日:2024-05-07

    申请号:US17163945

    申请日:2021-02-01

    CPC classification number: H05G2/008 H01L21/268 G03F7/70033

    Abstract: Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.

    SEMICONDUCTOR MANUFACTURING APPARATUS AND OPERATING METHOD THEREOF

    公开(公告)号:US20210385932A1

    公开(公告)日:2021-12-09

    申请号:US17163945

    申请日:2021-02-01

    Abstract: Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.

    Semiconductor manufacturing apparatus and operating method thereof

    公开(公告)号:US12185450B2

    公开(公告)日:2024-12-31

    申请号:US18628152

    申请日:2024-04-05

    Abstract: Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.

    METHOD OF CORRECTING EUV OVERLAY AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME

    公开(公告)号:US20240176230A1

    公开(公告)日:2024-05-30

    申请号:US18462796

    申请日:2023-09-07

    CPC classification number: G03F1/70

    Abstract: There is provided an extreme ultraviolet (EUV) overlay correcting method capable of effectively correcting an overlay error in an EUV exposure process and a method of manufacturing a semiconductor device including the same. The EUV overlay correcting method includes forming a first photoresist (PR) pattern on a wafer by performing an EUV exposure process using a reticle, inspecting an EUV overlay for the first PR pattern and obtaining a first overlay for a first overlay parameter in which an overlay three-dimensionally increases away from a center to opposing sides of the first PR pattern in a first direction perpendicular to a scan direction, calculating deformation data of the reticle based on the first overlay, applying a voltage to a clamp electrode of a reticle stage to create the reticle into a deformed reticle, and forming a second PR pattern on the wafer by performing an EUV exposure process using the deformed reticle.

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